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    SI7818DN Price and Stock

    Vishay Siliconix SI7818DN-T1-GE3

    MOSFET N-CH 150V 2.2A PPAK1212-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI7818DN-T1-GE3 Digi-Reel 4,830 1
    • 1 $2.2
    • 10 $1.411
    • 100 $2.2
    • 1000 $0.70195
    • 10000 $0.70195
    		Buy Now
    SI7818DN-T1-GE3 Cut Tape 4,830 1
    • 1 $2.2
    • 10 $1.411
    • 100 $2.2
    • 1000 $0.70195
    • 10000 $0.70195
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    SI7818DN-T1-GE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.6
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    Vishay Siliconix SI7818DN-T1-E3

    MOSFET N-CH 150V 2.2A PPAK1212-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI7818DN-T1-E3 Digi-Reel 2,872 1
    • 1 $2.2
    • 10 $1.411
    • 100 $2.2
    • 1000 $0.70195
    • 10000 $0.70195
    		Buy Now
    SI7818DN-T1-E3 Cut Tape 2,872 1
    • 1 $2.2
    • 10 $1.411
    • 100 $2.2
    • 1000 $0.70195
    • 10000 $0.70195
    		Buy Now
    SI7818DN-T1-E3 Reel 3,000
    • 1 -
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    • 10000 $0.6
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    RS SI7818DN-T1-E3 Bulk 3,000
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    • 10000 $1.11
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    Vishay Intertechnologies SI7818DN-T1-E3

    Trans MOSFET N-CH 150V 2.2A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7818DN-T1-E3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI7818DN-T1-E3 Reel 3,000
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    • 10000 $0.5688
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    Newark SI7818DN-T1-E3 Reel 3,000
    • 1 -
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    • 1000 -
    • 10000 $0.639
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    SI7818DN-T1-E3 Cut Tape 3,000
    • 1 -
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    • 100 $0.908
    • 1000 $0.908
    • 10000 $0.908
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    TTI SI7818DN-T1-E3 Reel 3,000
    • 1 -
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    • 10000 $0.6
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    Chip One Stop SI7818DN-T1-E3 Cut Tape 1,539
    • 1 $0.96
    • 10 $0.706
    • 100 $0.578
    • 1000 $0.506
    • 10000 $0.506
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    EBV Elektronik SI7818DN-T1-E3 10 Weeks 3,000
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    Vishay Intertechnologies SI7818DN-T1-GE3

    Trans MOSFET N-CH 150V 2.2A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7818DN-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI7818DN-T1-GE3 Reel 3,000
    • 1 -
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    • 10000 $0.6513
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    Newark SI7818DN-T1-GE3 Reel 3,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.639
    		Buy Now
    SI7818DN-T1-GE3 Cut Tape 3,000
    • 1 -
    • 10 -
    • 100 $1.08
    • 1000 $1.08
    • 10000 $1.08
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    Bristol Electronics SI7818DN-T1-GE3 251
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    TTI SI7818DN-T1-GE3 Reel 21,000 3,000
    • 1 -
    • 10 -
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    • 1000 -
    • 10000 $0.561
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    EBV Elektronik SI7818DN-T1-GE3 10 Weeks 3,000
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    Vishay Intertechnologies SI7818DN-T1-E3.

    MOSFETs PWRPK 150V 2.2A N-CH MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SI7818DN-T1-E3. Cut Tape 3,000 10
    • 1 -
    • 10 $2.2
    • 100 $2.2
    • 1000 $2.2
    • 10000 $2.2
    		Buy Now
    Find more SI7818DN price and stock on Findchips.com

    SI7818DN Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI7818DN-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 2.2A 1212-8 Original PDF
    SI7818DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 2.2A 1212-8 Original PDF

    SI7818DN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si7818DN

    Abstract: si7818
    Text: Si7818DN New Product Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.135 @ VGS = 10 V 3.4 0.142 @ VGS = 6 V 3.3 Qg(Typ) 20 nC D PWM-Optimized TrenchFETr Power MOSFET D 100% Rg Tested D Avalanche Tested


    Original     		Si7818DN Si7818DN-T1--E3 08-Apr-05 si7818 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7818DN Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.135 at VGS = 10 V 3.4 0.142 at VGS = 6 V 3.3 Qg (Typ.) 20 nC • Halogen-free According to IEC 61249-2-21 Available • PWM-Optimized TrenchFET Power MOSFET


    Original     		Si7818DN Si7818DN-T1-E3 Si7818DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    73336

    Abstract: No abstract text available
    Text: SPICE Device Model Si7818DN www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si7818DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 73336 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7818DN Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.135 at VGS = 10 V 3.4 0.142 at VGS = 6 V 3.3 Qg (Typ.) 20 nC • Halogen-free According to IEC 61249-2-21 Available • PWM-Optimized TrenchFET Power MOSFET


    Original     		Si7818DN Si7818DN-T1-E3 Si7818DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7818DN New Product Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.135 @ VGS = 10 V 3.4 0.142 @ VGS = 6 V 3.3 Qg(Typ) 20 nC D PWM-Optimized TrenchFETr Power MOSFET D 100% Rg Tested Product Is D Avalanche Tested


    Original     		Si7818DN Si7818DN-T1--E3 S-50405--Rev. 07-Mar-05 PDF

    Si7818DN

    Abstract: Si7818DN-T1-E3 Si7818DN-T1-GE3
    Text: Si7818DN Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.135 at VGS = 10 V 3.4 0.142 at VGS = 6 V 3.3 Qg (Typ.) 20 nC • Halogen-free According to IEC 61249-2-21 Available • PWM-Optimized TrenchFET Power MOSFET


    Original     		Si7818DN Si7818DN-T1-E3 Si7818DN-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7818DN Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.135 at VGS = 10 V 3.4 0.142 at VGS = 6 V 3.3 Qg (Typ.) 20 nC • Halogen-free According to IEC 61249-2-21 Available • PWM-Optimized TrenchFET Power MOSFET


    Original     		Si7818DN Si7818DN-T1-E3 Si7818DN-T1-GE3 11-Mar-11 PDF

    8229

    Abstract: si7818 AN609 Si7818DN
    Text: Si7818DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si7818DN AN609 26-Jul-07 8229 si7818 PDF

    Si7818DN

    Abstract: Si7818DN-T1-GE3 Si7818DN-T1-E3 si7818
    Text: Si7818DN Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.135 at VGS = 10 V 3.4 0.142 at VGS = 6 V 3.3 Qg (Typ.) 20 nC • Halogen-free According to IEC 61249-2-21 Available • PWM-Optimized TrenchFET Power MOSFET


    Original     		Si7818DN Si7818DN-T1-E3 Si7818DN-T1-GE3 10lectual 18-Jul-08 si7818 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7818DN www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.135 at VGS = 10 V 3.4 0.142 at VGS = 6 V 3.3 Qg (TYP.) 20 nC • PWM-optimized TrenchFET power MOSFET • 100 % Rg tested • Avalanche tested


    Original     		Si7818DN Si7818DN-T1-E3 Si7818DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    50142

    Abstract: No abstract text available
    Text: Si7818DN New Product Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.135 @ VGS = 10 V 3.4 0.142 @ VGS = 6 V 3.3 Qg(Typ) 20 D PWM-Optimized TrenchFETr Power MOSFET D 100% Rg Tested D Avalanche Tested APPLICATIONS


    Original     		Si7818DN Si7818DN-T1--E3 S-50142--Rev. 24-Jan-05 50142 PDF

    Si7818DN

    Abstract: si7818
    Text: SPICE Device Model Si7818DN Vishay Siliconix N-Channel 150-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si7818DN S-50493Rev. 21-Mar-05 si7818 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7818DN Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.135 at VGS = 10 V 3.4 0.142 at VGS = 6 V 3.3 Qg (Typ.) 20 nC • Halogen-free According to IEC 61249-2-21 Available • PWM-Optimized TrenchFET Power MOSFET


    Original     		Si7818DN Si7818DN-T1-E3 Si7818DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7818DN New Product Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.135 @ VGS = 10 V 3.4 0.142 @ VGS = 6 V 3.3 Qg(Typ) 20 nC D PWM-Optimized TrenchFETr Power MOSFET D 100% Rg Tested D Avalanche Tested


    Original     		Si7818DN Si7818DN-T1--E3 18-Jul-08 PDF

    si7818

    Abstract: Si7818DN
    Text: SPICE Device Model Si7818DN Vishay Siliconix N-Channel 150-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si7818DN 18-Jul-08 si7818 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3 PDF

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l PDF

    Rubycon photoflash

    Abstract: 12V, 20A automatic charger LT3751 zener marking hitachi DCT20EFD AC Transformer 50A 100V inductance usim diode sud33n20 NMOS F12 400V to 48V converter
    Text: LT3751 Capacitor Charger Controller with Regulation FEATURES DESCRIPTION n The LT 3751 is a high input voltage capable flyback controller designed to rapidly charge a large capacitor to a user-adjustable target voltage set by the transformer turns ratio and three external resistors. An optional feedback pin


    Original     		LT3751 10-Lead LT3585-0/LT3585-1 LT3585-2/LT3585-3 LT3585-3 DFN-10 LT3750 300ms MSOP-10 3751f Rubycon photoflash 12V, 20A automatic charger LT3751 zener marking hitachi DCT20EFD AC Transformer 50A 100V inductance usim diode sud33n20 NMOS F12 400V to 48V converter PDF

    Rubycon photoflash

    Abstract: GA3460-BL LT3751FE LT3751 ntb30n20t4g pmos 40a 1000v 750032051 transformer DCT20EFD DCT15EFD-U44S003 PS2801
    Text: LT3751 High Voltage Capacitor Charger Controller with Regulation FEATURES n n n n n n n n n n DESCRIPTION Charges Any Size Capacitor Low Noise Output in Voltage Regulation Mode Stable Operation Under a No-Load Condition Integrated 2A MOSFET Gate Driver with Rail-to-Rail


    Original     		LT3751 20-Pin 20-Lead capacitor20V, 10-Lead LT3585-0/LT3585-1/ LT3585-2/LT3585-3 LT3585-3 DFN-10 LT3750 Rubycon photoflash GA3460-BL LT3751FE LT3751 ntb30n20t4g pmos 40a 1000v 750032051 transformer DCT20EFD DCT15EFD-U44S003 PS2801 PDF

    DCT20EFD

    Abstract: PS07-299 DCT15EFD-U44S003 DCT25EFD-U27S005 750032052 Rubycon photoflash GA3459-AL Midcom LT3751FE si7820
    Text: LT3751 High Voltage Capacitor Charger Controller with Regulation FEATURES DESCRIPTION n The LT 3751 is a high input voltage capable flyback controller designed to rapidly charge a large capacitor to a user-adjustable high target voltage set by the transformer


    Original     		LT3751 Adjust20V, 10-Lead LT3585-0/LT3585-1/ LT3585-2/LT3585-3 LT3585-3 DFN-10 LT3750 300ms MSOP-10 DCT20EFD PS07-299 DCT15EFD-U44S003 DCT25EFD-U27S005 750032052 Rubycon photoflash GA3459-AL Midcom LT3751FE si7820 PDF

    Untitled

    Abstract: No abstract text available
    Text: LT3751 High Voltage Capacitor Charger Controller with Regulation FEATURES n n n n n n n n n n DESCRIPTION Charges Any Size Capacitor Low Noise Output in Voltage Regulation Mode Stable Operation Under a No-Load Condition Integrated 2A MOSFET Gate Driver with Rail-to-Rail


    Original     		LT3751 20-Pin 20-Lead LT3485-0 10-Lead LT3585-0/LT3585-1/ LT3585-2/LT3585-3 LT3585-3 DFN-10 LT3750 PDF

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF