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    SI9945AEY SPICE DEVICE MODEL Search Results

    SI9945AEY SPICE DEVICE MODEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    SI9945AEY SPICE DEVICE MODEL Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si9945AEY SPICE Device Model Vishay Dual N-Channel Enhancement-Mode MOSFET Original PDF

    SI9945AEY SPICE DEVICE MODEL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SI9945

    Abstract: Si9945AEY Si9945AEY SPICE Device Model
    Text: SPICE Device Model Si9945AEY Vishay Siliconix Dual N-Channel Enhancement-Mode MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si9945AEY 18-Jul-08 SI9945 Si9945AEY SPICE Device Model PDF

    Si9945aey

    Abstract: SI9945
    Text: SPICE Device Model Si9945AEY Vishay Siliconix Dual N-Channel Enhancement-Mode MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si9945AEY 18-Apr-01 SI9945 PDF

    SI9945

    Abstract: Si9945AEY
    Text: SPICE Device Model Si9945AEY Dual N-Channel Enhancement-Mode MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model Subcircuit • Level 3 MOS • Applicable for Both Linear and Switchmode • Applicable Over a -55 to 125°C Temperature Range


    Original     		Si9945AEY SI9945 PDF

    SQ9945AEY-T1

    Abstract: SI9945 AECQ101 Si9945AEY-T1 a2045
    Text: Si9945AEY/SQ9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • TrenchFET Power MOSFETs • Maximum Junction Temperature: 175 °C Rated


    Original     		Si9945AEY/SQ9945AEY Si9945AEY-T1 SQ9945AEY-T1 AECQ101 S-61010-Rev. 12-Jun-06 SQ9945AEY-T1 SI9945 a2045 PDF

    Si9945AEY-T1

    Abstract: SI9945 SQ9945AEY-T1 AECQ101 SI9945AEY Si9945AEY SPICE Device Model
    Text: Si9945AEY/SQ9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • TrenchFET Power MOSFETs • Maximum Junction Temperature: 175 °C Rated


    Original     		Si9945AEY/SQ9945AEY Si9945AEY-T1 SQ9945AEY-T1 AECQ101 08-Apr-05 SI9945 SQ9945AEY-T1 SI9945AEY Si9945AEY SPICE Device Model PDF