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Vishay Siliconix SIA444DJT-T4-GE3 MOSFET N-CH 30V 11A/12A PPAK
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Vishay Siliconix SIA444DJT-T1-GE3 MOSFET N-CH 30V 12A PPAK SC70-6
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	SIA444DJT-T1-GE3	Digi-Reel			1	1 $0.6 10 $0.6 100 $0.6 1000 $0.6 10000 $0.6	Buy Now
	SIA444DJT-T1-GE3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now

SIA444DJT Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIA444DJT-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 12A SC-70		Original	PDF
SIA444DJT-T4-GE3		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V SMD		Original	PDF

SIA444DJT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: New Product SiA444DJT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.017 at VGS = 10 V 12 0.022 at VGS = 4.5 V 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	SiA444DJT SC-70-6L-Single SC-70 2002/95/EC SiA444DJT-T1-GE3 11-Mar-11
Untitled Abstract: No abstract text available Text: SPICE Device Model SiA444DJT Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	SiA444DJT 18-Jul-08
210208 Abstract: No abstract text available Text: SiA444DJT_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	SiA444DJT AN609, 0527u 5148m 3910m 2072m 8426u 2220u 1927m 210208
Untitled Abstract: No abstract text available Text: New Product SiA444DJT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.017 at VGS = 10 V 12 0.022 at VGS = 4.5 V 4.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	SiA444DJT SC-70 2002/95/EC SC-70-6L-Single SiA444DJT-T1-GE3 11-Mar-11
Untitled Abstract: No abstract text available Text: SPICE Device Model SiA444DJT www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	SiA444DJT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiA444DJT www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) a 0.017 at VGS = 10 V 12 0.022 at VGS = 4.5 V 12 VDS (V) 30 • TrenchFET power MOSFET Qg (TYP.) • New thermally enhanced PowerPAK® SC-70	Original	PDF	SiA444DJT SC-70 SC-70-6L 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: New Product SiA444DJT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.017 at VGS = 10 V 12 0.022 at VGS = 4.5 V 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	SiA444DJT SC-70 2002/95/EC SC-70-6L-Single 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
marking code E2 Abstract: No abstract text available Text: New Product SiA444DJT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.017 at VGS = 10 V 12 0.022 at VGS = 4.5 V 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	SiA444DJT SC-70-6L-Single SC-70 2002/95/EC SiA444DJT-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 marking code E2
Untitled Abstract: No abstract text available Text: New Product SiA444DJT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.017 at VGS = 10 V 12 0.022 at VGS = 4.5 V 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	SiA444DJT SC-70 2002/95/EC SC-70-6L-Single 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
NX3008 Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N Text: Advanced cross reference list DFN* MOSFETs DFN: discrete flat no-leads in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1	Original	PDF	AON2240 AON2401 AON2405 AON2406 AON2407 AON2408 AON2409 AON2410 AON2420 AON2701 NX3008 IRLHS6242 SiA431DJ SSM6J503NU IRLHS2242 DMN3730UFB4 FDMA1028NZ FDMA3028N
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance PowerPAK SC-70 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:	Original	PDF	SC-70 SiA519EDJ com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1402
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836