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Vishay Siliconix SIA450DJ-T1-E3 MOSFET N-CH 240V 1.52A PPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIA450DJ-T1-E3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SIA450DJ-T1-E3	Digi-Reel			1	1 $0.9 10 $0.9 100 $0.9 1000 $0.9 10000 $0.9	Buy Now
	SIA450DJ-T1-E3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Quest Components	SIA450DJ-T1-E3		48			1 $0.75 10 $0.625 100 $0.5 1000 $0.5 10000 $0.5	Buy Now
Vishay Siliconix SIA450DJ-T1-GE3 MOSFET N-CH 240V 1.52A PPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIA450DJ-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

SIA450DJ Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIA450DJ-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 240V 1.52A SC70-6		Original	PDF
SIA450DJ-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 240V 1.52A SC70-6		Original	PDF

SIA450DJ Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SiA450DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	SiA450DJ AN609, 9999u 0841m 9107m 5440m 1720u 3046u 4369m
SIA450DJ Abstract: No abstract text available Text: New Product SiA450DJ Vishay Siliconix N-Channel 240-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 2.9 at VGS = 10 V 1.52 240 2.95 at VGS = 4.5 V 1.5 3.5 at VGS = 2.5 V 1.44 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®	Original	PDF	SiA450DJ SC-70 SC-70-6L-Single SiA450DJ-T1-GE3 08-Apr-05
Untitled Abstract: No abstract text available Text: New Product SiA450DJ Vishay Siliconix N-Channel 240-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 2.9 at VGS = 10 V 1.52 240 2.95 at VGS = 4.5 V 1.5 3.5 at VGS = 2.5 V 1.44 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®	Original	PDF	SiA450DJ SC-70 SC-70-6L-Single SiA450DJ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
SIA450DJ Abstract: No abstract text available Text: New Product SiA450DJ Vishay Siliconix N-Channel 240-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 2.9 at VGS = 10 V 1.52 240 2.95 at VGS = 4.5 V 1.5 3.5 at VGS = 2.5 V 1.44 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®	Original	PDF	SiA450DJ SC-70 SC-70-6L-Single SiA450DJ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: New Product SiA450DJ Vishay Siliconix N-Channel 240-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 2.9 at VGS = 10 V 1.52 240 2.95 at VGS = 4.5 V 1.5 3.5 at VGS = 2.5 V 1.44 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®	Original	PDF	SiA450DJ SC-70 SC-70-6L-Single SiA450DJ-T1-GE3 11-Mar-11
SiA450DJ-T1-E3 Abstract: SIA450DJ Text: New Product SiA450DJ Vishay Siliconix N-Channel 240-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 2.9 at VGS = 10 V 1.52 240 2.95 at VGS = 4.5 V 1.5 3.5 at VGS = 2.5 V 1.44 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®	Original	PDF	SiA450DJ SC-70-6L-Single SiA450DJ-T1-E3 08-Apr-05
SiA450DJ Abstract: No abstract text available Text: New Product SiA450DJ Vishay Siliconix N-Channel 240-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 2.9 at VGS = 10 V 1.52 240 2.95 at VGS = 4.5 V 1.5 3.5 at VGS = 2.5 V 1.44 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®	Original	PDF	SiA450DJ SC-70 SC-70-6L-Single SiA450DJ-T1-GE3 18-Jul-08
SiA450DJ Abstract: No abstract text available Text: New Product SiA450DJ Vishay Siliconix N-Channel 240-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 2.9 at VGS = 10 V 1.52 240 2.95 at VGS = 4.5 V 1.5 3.5 at VGS = 2.5 V 1.44 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®	Original	PDF	SiA450DJ SC-70 SC-70-6L-Single SiA450DJ-T1-GE3 11-Mar-11
SIA450DJ Abstract: 67215 Text: SPICE Device Model SiA450DJ Vishay Siliconix N-Channel 240 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	SiA450DJ 18-Jul-08 67215
SIA450DJ Abstract: No abstract text available Text: New Product SiA450DJ Vishay Siliconix N-Channel 240-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 240 rDS(on) (Ω) ID (A) 2.9 at VGS = 10 V 1.52 2.95 at VGS = 4.5 V 1.5 3.5 at VGS = 2.5 V 1.44 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®	Original	PDF	SiA450DJ SC-70-6L-Single SiA450DJ-T1-E3 08-Apr-05
Untitled Abstract: No abstract text available Text: New Product SiA450DJ Vishay Siliconix N-Channel 240-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 2.9 at VGS = 10 V 1.52 240 2.95 at VGS = 4.5 V 1.5 3.5 at VGS = 2.5 V 1.44 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®	Original	PDF	SiA450DJ SC-70 SC-70-6L-Single SiA450DJ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
BS250KL-TR1-E3 Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3 Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8	Original	PDF	SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
SiA427DJ Abstract: SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance AND TEC I INNOVAT O L OGY PowerPAK SC-70 N HN POWER MOSFETs O 19 62-2012 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:	Original	PDF	SC-70 SC-70 com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1209 SiA427DJ SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

si5480 Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3 Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT	Original	PDF	Si6463BDQ Si6459BDQ-T1-GE3 SI5944DU-T1-E3 SI5944DU-T1-GE3 SI5945DU-T1-E3 SI5945DU-T1-GE3 SI5947DU-T1-E3 SI5947DU-T1-GE3 PPAKSC75 si5480 SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3