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    SIC JFET CASCODE Search Results

    SIC JFET CASCODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS6E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 6 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    SIC JFET CASCODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SiC JFET

    Abstract: SiC jfet cascode ujn120
    Text: xJ SiC Series. 45mW - 1200V SiC Normally-On JFET. UJN1205K. Features CASE Low On-Resistance RDS on max of 0.045W CASE Voltage controlled Maximum operating temperature of 175°C Extremely fast switching not dependent on temperature Low gate charge Low intrinsic capacitance


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    PDF UJN1205K. UJN1205K O-247 SiC JFET SiC jfet cascode ujn120

    Untitled

    Abstract: No abstract text available
    Text: SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C 1200 V CoolSiC™ Power Transistor IJW120R100T1 Final Da ta sheet Rev. 2.0, <2013-09-11> Po wer Ma nage m ent & M ulti m ark et 1200 V Silicon Carbide JFET IJW120R100T1 Description


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    PDF IJW120R100T1

    IJW120R070T1

    Abstract: IJW120R silicon carbide
    Text: SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C 1200 V CoolSiC™ Power Transistor IJW120R070T1 Final Da ta sheet Rev. 2.0, <2013-09-11> Po wer Ma nage m ent & M ulti m ark et 1200 V Silicon Carbide JFET IJW120R070T1 Description


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    PDF IJW120R070T1 IJW120R070T1 IJW120R silicon carbide

    JFET siced

    Abstract: SiC-JFET siced SiC jfet cascode SiC JFET cascode mosfet switching SiC-JFET* JFET siced SiC-JFET comparison modern power device concepts high normally off SiC-JFET cascode mosfet switching thermal perfomance SiC IGBT IGBT THEORY AND APPLICATIONS
    Text: A comparison of modern power device concepts for high voltage applications: Field stop-IGBT, compensation devices and SiC devices G. Deboy, H. Hüsken, H. Mitlehner* and R. Rupp Infineon AG, P.O. Box 80 09 49, 81609 Munich, Germany *SICED Electronics Development, Paul-Gossenstr. 100, 91052 Erlangen, Germany


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    westinghouse transistors

    Abstract: No abstract text available
    Text: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 8, AUGUST 2008 1807 A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature Robert S. Howell, Member, IEEE, Steven Buchoff, Stephen Van Campen, Member, IEEE, Ty R. McNutt, Member, IEEE, Andris Ezis, Senior Member, IEEE, Bettina Nechay, Member, IEEE,


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    PDF 10-kV westinghouse transistors

    Untitled

    Abstract: No abstract text available
    Text: artville Opportunities and Challenges in Realizing the Full Potential of SiC Power Devices Ranbir Singh and Michael Pecht 1932-4529/08/$25.00©2008 IEEE E volutionary improvements in silicon Si power devices through better device designs, processing techniques, and material quality have


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    PDF r1996, XVI-14.

    SiC-JFET

    Abstract: SiC JFET Gan on silicon transistor EPC Gan transistor Gan on silicon substrate SiC jfet cascode silicon carbide JFET normally on SiC BJT 600V GaN DMOS SiC
    Text: Gallium Nitride GaN versus Silicon Carbide (SiC) In The High Frequency (RF) and Power Switching Applications Introduction Work on wide bandgap materials and devices have been going on for many years. The properties of these materials are very exciting to designers because wide band gap devices promise


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    Untitled

    Abstract: No abstract text available
    Text: Microelectronics Reliability 46 2006 713–730 www.elsevier.com/locate/microrel Introductory Invited Paper Reliability and performance limitations in SiC power devices Ranbir Singh * GeneSiC Semiconductor Inc., 42652 Jolly Lane, South Riding, VA 20152, United States


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    P-Channel IGBT

    Abstract: No abstract text available
    Text: Novel SiC MOS-Bipolar Switches for >10 kV Applications Ranbir Singh GeneSiC Semiconductor Inc. 25050 Riding Plaza, Suite 130-801, South Riding, VA 20152 571-265-7535 ph , 703-373-6918 (fax), [email protected] (email). MOS-based gate control is considered a necessity for the applicability of a switch to


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    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


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    Funkamateur

    Abstract: PMBFJ620 spice model SiC PIN diode Pspice model Densitron microwave philips 3F1 Transistor SIEMENS MICROWAVE RADIO JP2043 jfet cascode stage in AM LNA ECC85 Kathrein K73232
    Text: セミコンダクタ 付録RFマニュアル第6版 2005年5月 リリース日付:2005年5月 ドキュメント注文番号: 9397 750 15125 目 次 1. RFアプリケーション-基礎編 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5


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    PDF BFG410W BFU540 21dBm BGU2003 15dBm BFG325W Funkamateur PMBFJ620 spice model SiC PIN diode Pspice model Densitron microwave philips 3F1 Transistor SIEMENS MICROWAVE RADIO JP2043 jfet cascode stage in AM LNA ECC85 Kathrein K73232

    IR TRansmitter and receiver wikipedia

    Abstract: SIEMENS 565-2 white noise Generator 1GHz ECC85 samsung colour tv kit circuit diagram Kathrein Antennas elektra c radio diagram philips rf manual Funkamateur varactor diode model in ADS
    Text: Semiconductors Appendix RF Manual 6th edition May 2005 date of release: May 2005 document order number: 9397 750 15125 Contents 1. RF Application-Basics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5


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    SiC jfet cascode

    Abstract: LT 5216 OP-43 OP43GP OP43 OP43EJ 43A 538 LT 5219
    Text: OP-43 PM! LOW-BIAS-CURRENX FAST JFET OPERATIONAL AMPLIFIER FEATURES • • • • • • • • • • Low Bias C urrent. High S le w -R a te . Low Current C on sum ption .


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    PDF OP-43 000V/mV 100dB 100kHz 100kHz, 6N136. SiC jfet cascode LT 5216 OP-43 OP43GP OP43 OP43EJ 43A 538 LT 5219

    e420 dual jfet

    Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
    Text: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.


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    hall marking code A04

    Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
    Text: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”


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    PDF 2PHX14226-31 hall marking code A04 M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code

    Numeric Digital HPE 1150

    Abstract: SSS725 delta inverter dac 08N PM725CJ A0018C MC1408L8 AD7506JN SSS1408-7Q pmi mux 08
    Text: TABLE OF CONTENTS I E | Q.A. PROGRAM J INDUSTRY CROSS REFERENCE. 3 | FUNCTIONAL REPLACEMENT GUIDE 3 OPE R ATIO NAL AMPLIFIERS BUFFERS '.VOLTAGE TOLLOWERSl COMPARATORS MATC HLD TRANSISTORS | VOL1 AGE RLE ERE N t ES 3 3 3 3 j E D A CONVERTERS | MULTIPLEXERS ANALOG SWI1CUES


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    TCA965 equivalent

    Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
    Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated


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    PDF DG211. DG300 DG308 DG211 TCA965 equivalent ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401

    AM97C11CN

    Abstract: AM9711CN LM378 equivalent SVI 3102 b LM1850 National Semiconductor LM2706 320l 78l05 lm1900 SVI 3105 B mc1458cp1 sgs
    Text: Edge Index by Function 2 l e i . Voltage Regulators Voltage References Operational Amplifiers/Buffers Instrumentation Amplifiers Voltage Comparators Analog Switches Sample and Hold A to D, D to A 8 Industrial/Automotive/Functional Blocks 9 Audio, Radio and TV Circuits


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    DAC89EX

    Abstract: BB-3500 OP01CP AD540JH bb3500 AD308H mA747PC 6502 microprocessor REF05 cookbook for ic 555
    Text: PM 11984DATA B O O K The P M I C o m m itm e n t P M I is c o m m itte d to b u ild in g lo n g te rm c u s to m e r re la tio n s h ip s resulting in m u tu a l g ro w th . At PM I w e d e d ic a t e ourselves to le a d e rs h ip in c u s to m e r service,


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    PDF 11984DATA bey-400 011-5761-VSON-IN. DAC89EX BB-3500 OP01CP AD540JH bb3500 AD308H mA747PC 6502 microprocessor REF05 cookbook for ic 555

    uln2803 spice model

    Abstract: MC1303 MC3340 equivalent bpl color tv Circuit Diagram schematics RADIO SHACK PARTS CROSS REF ABSTRACT FOR super bright flashing led light siemens semiconductor manual ULN2804A 166NNF10264AG hall marking code A04
    Text: Volumes II Alphanumeric Index and Cross References 1 • Amplifiers and Comparators 2 Power Supply Circuits ■ 3 Power/Motor Control Circuits Voltage References Data Conversion Interface Circuits Communication Circuits . Consumer Electronic Circuits Automotive Electronic Circuits


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    PDF LM2575 MC78BC00 MC78FC00 MC78LC00 MC33154 MC33264 MC33341 MC33347 MC33348 MC33363A uln2803 spice model MC1303 MC3340 equivalent bpl color tv Circuit Diagram schematics RADIO SHACK PARTS CROSS REF ABSTRACT FOR super bright flashing led light siemens semiconductor manual ULN2804A 166NNF10264AG hall marking code A04

    2N2369 AVALANCHE PULSE GENERATOR

    Abstract: 2n3054 JEC 600 watts amplifier schematic diagram Germanium drift transistor LM373 AN6311 germanium transistor transitron LM304 AN2918
    Text: National PREFACE The purpose of this handbook is to provide a fully indexed and cross-referenced collection of linear in­ tegrated circuit applications using both monolithic and hybrid circuits from National Semiconductor. Individual application notes are normally written to ex­


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    PDF LB20-2 2N2369 AVALANCHE PULSE GENERATOR 2n3054 JEC 600 watts amplifier schematic diagram Germanium drift transistor LM373 AN6311 germanium transistor transitron LM304 AN2918

    Horizontal Transistor TT 2246

    Abstract: ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601
    Text: New High Speed Linear Products VIDEO OP AMPS AND BUFFERS HFA1105 LOW POWER VIDEO OP AMP HFA1115 I LOW POWER PROGRAMMABLE GAIN VIDEO BUFFER [ AnswerFAX DOCUMENT # 3395 AnswerFAX DOCUMENT * 3606 • -3dB Bandwidth Ay * + 2 . 350MHz


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    PDF HFA1105 HFA1115 350MHz 225MHz 000V/ps 50MHz. Horizontal Transistor TT 2246 ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    LM1808

    Abstract: LM1800 TRANSISTOR LM371 ks2 6k MC7812CP LM3026 SN52101AJ transistor bf 175 LM170 Germanium drift transistor
    Text: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communications and consumer oriented circuits to precision instrumentation and computer designs.


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    PDF LM741 MIL-M-38510, M-38510/ 10101BCC. MIL-M-38510 L-M-38510 LM1808 LM1800 TRANSISTOR LM371 ks2 6k MC7812CP LM3026 SN52101AJ transistor bf 175 LM170 Germanium drift transistor