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    SIC01 Search Results

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    SIC01 Price and Stock

    Diotec Semiconductor AG DIW065SIC015

    SIC MOSFET, TO-247-3L, N, 150A,
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DIW065SIC015 Tube 1
    • 1 $29.31
    • 10 $29.31
    • 100 $21.055
    • 1000 $21.055
    • 10000 $21.055
    Buy Now
    Mouser Electronics DIW065SIC015
    • 1 $92.31
    • 10 $72.17
    • 100 $72.17
    • 1000 $43.28
    • 10000 $43.28
    Get Quote
    TME DIW065SIC015 1
    • 1 $33.41
    • 10 $30.16
    • 100 $27.84
    • 1000 $22.28
    • 10000 $22.28
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    Balluff Inc BAM0335 (ALTERNATE: BAM FS-IC-010-Q40-O)

    Inductive Couplers, Magnetic holder, Magnetic holder, for inductive couplers Q4 | Balluff BAM0335
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS BAM0335 (ALTERNATE: BAM FS-IC-010-Q40-O) Bulk 1
    • 1 $180.41
    • 10 $180.41
    • 100 $180.41
    • 1000 $180.41
    • 10000 $180.41
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    Cyg Wayon Circuit Protection Co Ltd WSRSIC010065NNI

    Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ACIns; tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME WSRSIC010065NNI 50 1
    • 1 $2.8
    • 10 $2.52
    • 100 $2.23
    • 1000 $1.88
    • 10000 $1.74
    Buy Now

    Cyg Wayon Circuit Protection Co Ltd WSRSIC010065NPF

    Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME WSRSIC010065NPF 49 1
    • 1 $2.62
    • 10 $2.35
    • 100 $2.08
    • 1000 $1.74
    • 10000 $1.61
    Buy Now

    Cyg Wayon Circuit Protection Co Ltd WSRSIC010065NPC

    Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 1.5uA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME WSRSIC010065NPC 40 1
    • 1 $1.67
    • 10 $1.51
    • 100 $1.34
    • 1000 $1.12
    • 10000 $1.04
    Buy Now

    SIC01 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SIC01M-18

    Abstract: No abstract text available
    Text: SIC01M-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The


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    PDF SIC01M-18 SIC01M-18

    uvc photodiode

    Abstract: uv sensor SIC01M silicon carbide TO-39, UVC
    Text: UVC-selective SiC based UV sensor SIC01M-C Features • UVC Photodiode with medium-sized photoactive area • Good compromise between signal strength and price • Silicon Carbide based chip for extreme irradiation hardness • Spectral Response in accordance with DVGW W 294


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    PDF SIC01M-C uvc photodiode uv sensor SIC01M silicon carbide TO-39, UVC

    SIC01S-HT

    Abstract: silicon carbide UV photodiode
    Text: Ultraviolet selective SiC based UV sensor SIC01S-HT Features • Operating Temperature up to 170°C • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness •


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    PDF SIC01S-HT SIC01S-HT silicon carbide UV photodiode

    SIC01S-B18

    Abstract: No abstract text available
    Text: SIC01S-B18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The


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    PDF SIC01S-B18 SIC01S-B18

    SIC01

    Abstract: "vlsi technology" on 5718 ICC05
    Text: SIC01 SERIES 70mil 1.778mm SHRINK IC SOCKET SUMMARY As IC electronic packaging progresses towards further LSI/VLSI technology, KEL Corp. has met this challenge by developing a new 70mil Shrink IC socket. Kel has again incorporated a high reliability and quality


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    PDF SIC01 70mil 778mm) 70mil ICC05 SIC01 "vlsi technology" on 5718

    uv flame sensor

    Abstract: FLAME SENSOR UV ultraviolet sensor uv photodiode sic01m ultraviolet sensor flame cree Sic uv sensor Ultraviolet SIC01M
    Text: Ultraviolet selective SiC based UV sensor SIC01M – LENS Features • Broad band UVA-UVB-UVC photodiode for weak and directed radiation • Perfectly suited for flame sensing • Silicon Carbide based chip for extreme low noise and dark current • Chip dimensions of 0.5 x 0.5 mm2 with 0.22 mm2 active area


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    PDF SIC01M S280nm S400nm uv flame sensor FLAME SENSOR UV ultraviolet sensor uv photodiode sic01m ultraviolet sensor flame cree Sic uv sensor Ultraviolet SIC01M

    TO-39, UVC

    Abstract: SIC01L-5-C uvc photodiode uv sensor silicon carbide
    Text: UVC-selective SiC based UV sensor SIC01L-5-C Features • UVC Photodiode with large photoactive area • Optimally suited for weak UVC intensities • Silicon Carbide based chip for extreme irradiation hardness • Spectral response in accordance with DVGW W 294


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    PDF SIC01L-5-C TO-39, UVC SIC01L-5-C uvc photodiode uv sensor silicon carbide

    SIC01S-18ISO90

    Abstract: SiC Photodiodes
    Text: SIC01S-18ISO90 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC


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    PDF SIC01S-18ISO90 SIC01S-18ISO90 SiC Photodiodes

    SIC01L-5

    Abstract: No abstract text available
    Text: SIC01L-5 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The


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    PDF SIC01L-5 SIC01L-5

    SIC01L-C5

    Abstract: No abstract text available
    Text: SIC01L-C5 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The


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    PDF SIC01L-C5 SIC01L-C5

    Untitled

    Abstract: No abstract text available
    Text: SIC01D-B18 rev.6.1 04/15 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The


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    PDF SIC01D-B18

    SIC01M-5LENS

    Abstract: No abstract text available
    Text: SIC01M-5LENS V 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The


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    PDF SIC01M-5LENS SIC01M-5LENS

    uv photodiode SIC01L-18

    Abstract: SIC01L-18 cree ultraviolet uv sensor
    Text: Ultraviolet selective SiC based UV sensor SIC01L-18 Features • Broad band UVA-UVB-UVC photodiode in TO18 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 1 x 1 mm2 with 0.96 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material


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    PDF SIC01L-18 S280nm S400nm uv photodiode SIC01L-18 SIC01L-18 cree ultraviolet uv sensor

    SIC01S-C18

    Abstract: No abstract text available
    Text: SIC01S-C18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The


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    PDF SIC01S-C18 SIC01S-C18

    SIC01S-18

    Abstract: No abstract text available
    Text: SIC01S-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The


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    PDF SIC01S-18 SIC01S-18

    SIC01XL-5

    Abstract: No abstract text available
    Text: SIC01XL-5 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The


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    PDF SIC01XL-5 SIC01XL-5

    ultraviolet sensors

    Abstract: uv sensor ultraviolet sensor uvb sensor
    Text: Ultraviolet selective SiC based UV sensor SIC01S Features • • • • • • Silicon Carbide based chip for extreme irradiation hardness Intrinsic visible blindness due to wide-bandgap semiconductor material TO-18 metal package with 0,054 mm2 active chip area


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    PDF SIC01S ultraviolet sensors uv sensor ultraviolet sensor uvb sensor

    uv sensor

    Abstract: SIC01L-5 SUN SENSOR silicon carbide
    Text: Ultraviolet selective SiC based UV sensor SIC01L-5 Features • Broad band UVA-UVB-UVC photodiode in TO5 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 1 x 1 mm2 with 0.96 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material


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    PDF SIC01L-5 S280nm S400nm uv sensor SIC01L-5 SUN SENSOR silicon carbide

    Untitled

    Abstract: No abstract text available
    Text: ROITHNER LASERTECHNIK PRESENTS. NEW HIGH POWER UV-LED NS375L-ERLM UV-LED, peak wavelength 375 nm - 380 nm, 19.0 - 26.0 mW at 20 mA, clear 5 mm UV resistant epoxy forward voltage typ. 3.6 V, FWHM typ. 15 nm sample price: EUR 10.86 get datasheet price list page 37


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    PDF NS375L-ERLM SIC01L4-5

    MSM 7225

    Abstract: MOLEX 10PIN SD CARD TT 2146 female PCB connector 9pin d-sub 15PIN D-SUB CONNECTORS 68pin TO 50 PIN SCSI connector 50 pin (2x25), 2mm pitch header connectors 50PIN D-SUB CONNECTORS jst phr-6 68pin SCSI connector
    Text: AUK Complete Cross Reference Competitor Part No. SLM-132-01-G-S SAMTEC SLM-140-01-G-S SAMTEC SLM-150-01-G-S SAMTEC SLM-103-01-G-S SAMTEC SLM-104-01-G-S SAMTEC SLM-106-01-G-S SAMTEC SLM-122-01-G-S SAMTEC SLM-104-01-G-D SAMTEC SLM-105-01-G-D SAMTEC SLM-106-01-G-D SAMTEC


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    PDF SLM-132-01-G-S SLM-140-01-G-S SLM-150-01-G-S SLM-103-01-G-S SLM-104-01-G-S SLM-106-01-G-S SLM-122-01-G-S SLM-104-01-G-D SLM-105-01-G-D SLM-106-01-G-D MSM 7225 MOLEX 10PIN SD CARD TT 2146 female PCB connector 9pin d-sub 15PIN D-SUB CONNECTORS 68pin TO 50 PIN SCSI connector 50 pin (2x25), 2mm pitch header connectors 50PIN D-SUB CONNECTORS jst phr-6 68pin SCSI connector

    smd diode UJ 64 A

    Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
    Text: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 [email protected], www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.


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    PDF RLU4116E, RLT390-50CMG, RLT395-50CMG, RLT400-50CMG, TH06-1W, ATU61938489, AT1212 AT3112 smd diode UJ 64 A SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI