FR 151 diode
Abstract: HJC.1 siemens mosfet BSM 50 diode fr 207
Text: SIEMENS SIMOPAC MOSFET Modules VDS lD BSM 151 F C BSM 151 FR = 500 V = 56 A ^DS(on) = 0.11 Q • • • • • • • Power module Single switch FREDFET N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 1 a 1)
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C67076-A1050-A2
C67076-A1056-A2
FR 151 diode
HJC.1
siemens mosfet BSM 50
diode fr 207
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BSM141
Abstract: No abstract text available
Text: SIEMENS SIMOPAC MOSFET Module VDS l0 ^ D S o n • • • • • • BSM 141 = 400 V = 60 A = 0.075 Q Power module Single switch N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig . 1 a1) Type Ordering code BSM 141
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C67076-A1010-A2
BSM141
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Untitled
Abstract: No abstract text available
Text: SIEMENS SIMOPAC MOSFET Module BSM 191 C VDS = 1000 V lD = 28 A ^DS(on) = 0.37 fì • • • • • • Power module Single switch N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig . 1 a') Type Ordering code BSM 191 (C)
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C67076-A1009-A2
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Untitled
Abstract: No abstract text available
Text: ê235bOS 0Û20c]a4 M El SIEG SlEIVli SIEMENS AKTIENGESELLSCHAF M7E D ; T - - 3 7 -3 Ì BSM 151 F C BSM 151 FR SIMOPAC MOSFET Modules Vos Id = 500 V = 56 A ^ D S (o n ) = 1 Q • Pow er m odule • Sin gle switch • FREDFET • N channel • Enhancem ent m ode
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235bOS
fl235LiG5
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Untitled
Abstract: No abstract text available
Text: B ô23SbOS DQSG^lô 4 H S I E G SIEMENS AKTIENGESELLSCHAF 47E D 7 SIMOPAC MOSFET Modules BSM 181 F C BSM 181 FR = 800 V = 34 A ^D3(on) = 0.32 Q Vos h • Power module • Single switch • FREDFET • N channel • Enhancement mode • Package with Insulated metal base plate
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23SbOS
C67076-A1052-A2
C67076-A1057-A2
T-39-15
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T39 diode
Abstract: No abstract text available
Text: flSBSbOS ODSDÔTÔ 2 HI SIE6 SIEMENS AK TIE NGESELLSC HAF S IE iV 1 E i\S S 4?E D "T -3 9 -3 Î SIMOPAC MOSFET Modules A = 500 V à 48 A ^ D S o n ) a 0.12 Q VM • • • • • • BSM 151 (C) BSM 151 R Power module Single switch N channel Enhancement mode
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67076-A1004-A2
67076-A1015-A2
A235bQ5
Q020T03
T39 diode
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Untitled
Abstract: No abstract text available
Text: ö 2 3 S d GS SIEMEN! O O aC H ll SIEMENS 1 S IE ö AKTIENGESELLSCHAF M7E T V 3 9 -/5 SIMOPAC® MOSFET Modules v03 = 800 v l0 = 36 A 0.24 Q BSM 181 (C BSM 181 R ^ D S (o n ) = • • • • • • Power module Single switch N channel Enhancement mode
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C67076-A1001-A2
C67076-A1016-A2
123SbQS.
fi235bOS
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Untitled
Abstract: No abstract text available
Text: H ISIE G â235bG5 0020077 s SIEMENS SIEMENS A KT IE NGESELLSCHAF 47E T> T -39-/5 SIMOPAC MOSFET Module ^03 A ^DS on) • • • • • • BSM 121 AR (C) = 200 V = 130 A '=» 20 mfl Power module Single switch N channel Enhancement mode Package with insulated metal base plate
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235bG5
C67076-S1014-A2
235b05
535b05
T-39-15
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BSM254F
Abstract: No abstract text available
Text: SIEMENS SIMOPAC MOSFET Module VDS lD = 500 V =2x35 A ^ D S o n = 0.17 Q • • • • • • • BSM 254 F Power m odule H alf-bridge FREDFET N channel Enhancem ent mode Package with insulated metal base plate C ircuit diagram : Fig . 2 a ') Type Ordering code
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150-A2
BSM254F
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Untitled
Abstract: No abstract text available
Text: SIEMENS SIMOPAC MOSFET Module VDS lo ^ D S o n • • • • • • • BSM 191 F (C) = 1000 V = 28 A = 0.42 Q Power module Single switch FREDFET N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 1 a ’ ) Type
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C67076-A1053-A2
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bsm214a
Abstract: BSM 214 A
Text: SIEMENS SIMOPAC MOSFET Module BSM 214 A VDS lD = 100 V =2x125 A ^ D S on = 0.013 Q • • • • • • Power m odule H a lf-brid ge N channel Enhancem ent mode Package with insulated metal base plate C ircuit diagram : Fig . 2 a ') Type Ordering code
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2x125
67076-S
bsm214a
BSM 214 A
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BSM111
Abstract: No abstract text available
Text: SIEMENS SIMOPAC MOSFET Module VDS /D BSM 111 AR C = 100 V = 200 A ^DS(on) = 8*5 mQ • • • • • • Power m odule Single switch N channel Enhancem ent m ode Package with insulated m etal base plate C ircuit diagram : Fig . 1 a ’ ) Type Ordering code
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Untitled
Abstract: No abstract text available
Text: • S 1E M E N ! ÛS35bGS GGEGTBS ^ C3SIE6 SIEMENS AK TI EN GES ELLS CHAF M7E D 39-/5 SIMOPAC MOSFET Module BSM 191 F C Vbs = 1000 V /„ = 28 A ^DS(on) = 0.42 Q • • • • • • • Power module Single switch FREDFET N channel Enhancement mode
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S35bGS
C67076-A1053-A2
53SbDS
T-39-15
0235bG5
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Untitled
Abstract: No abstract text available
Text: SIEMENS SIMOPAC MOSFET Module BSM 651 F Vos = 500 V lD = 6 X 9 A ^DS on = 0.7 Q • • • • • • • Power m odule 3 -p ha se fu ll-b rid g e FREDFET N channel E nhancem ent m ode Package with insulated m etal base plate C ircuit diagram : Fig . 3 a ’ )
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7076-A
500-A
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Untitled
Abstract: No abstract text available
Text: SIEMENS SIMOPAC MOSFET Module ^DS Id ^ D S o n | • • • • • • • BSM 692 F = 1000 V = 6x9 A = 1.25 Q Power m odule 3-p ha se fu ll-b rid g e FREDFET N channel E nhancem ent mode Package with insulated metal base plate C ircuit diagram : Fig. 3 a 1
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7076-A
503-A
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Untitled
Abstract: No abstract text available
Text: • A23SbD5 0050070 2 S S I E G S Ü E IV IE ^ IS SIEMENS AKTIENGESELLSCHAF 47E T - 3 9 -iS SIMOPAC MOSFET Module BSM 111 AR C v03 = 100 V /q = 200 A ^DSIon) = • • • • • • Power module Single switch N channel Enhancement mode Package with Insulated metal base plate
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A23SbD5
23SbOS
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"MOSFET Module"
Abstract: siemens bsm 284 f
Text: SIEMENS BSM 284 F SIMOPAC MOSFET Module = 800 V = 2 X 20 A ^DSIont = 0.48 Q VDS lD • • • • • • • Power m odule H alf-bridge FREDFET N channel E nhancem ent mode Package with insulated m etal base plate C ircuit diagram : Fig. 2 a 1 Type Ordering code
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152-A2
"MOSFET Module"
siemens bsm 284 f
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ATIC 224
Abstract: siemens mosfet BSM 50
Text: SIEMENS SIMOPAC MOSFET Module VDS = 200 V /q = ^ D S o n = 0.03 Q • • • • • • 2 x 81 BSM 224 A a Power m odule H alf-bridge N channel E nhancem ent mode Package with insulated m etal base plate C ircuit diagram : Fig. 2 a 1) Type Ordering code
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siemens BSM b2
Abstract: smd zener GD AX transistor fp 1016 79 p Siemens anwendungsbeispiele siemens igbt BSM 25 gb 100 d BTS412A DIODE ZENER BZW 04 TRANSISTOR EN SMD TZ N-Kanal FET BTS542R
Text: Technische Angaben SIPMOS-Leistungstransistoren und Dioden SIPMOS-Leistungstransistoren Transistoren im Bereich 50 V . 1000 V, 1,5 A . 60 A und 18 mQ . 8 Q. P -K a n a l N-Kanal Produktpalette • • • • • N- und P-Kanal-Anreicherungstypen FREDFET
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B152-B6299-X-X-7400
siemens BSM b2
smd zener GD AX
transistor fp 1016 79 p
Siemens anwendungsbeispiele
siemens igbt BSM 25 gb 100 d
BTS412A
DIODE ZENER BZW 04
TRANSISTOR EN SMD TZ
N-Kanal FET
BTS542R
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BSM 204-A
Abstract: No abstract text available
Text: SIEM ENS SIMOPAC MOSFET Modules BSM 151 C BSM 151 R Vas = 500 V l0 = 48 A ^DS(on) = 0.12 Ö • • • • • • Power module Single switch N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 1a ') Type Ordering code
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C67076-A1004-A2
C67076-A1015-A2
BSM 204-A
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siemens mosfet BSM 50
Abstract: BSM181C
Text: SIEM EN S SIMOPAC VDS /D ^ D S o n • • • • • • MOSFET Modules BSM 181 (C) BSM 181 R = 800 V = 36 A ~ 0.24 ß Power module Single switch N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 1a') Type Ordering code
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C67076-A1001-A2
C67076-A1016-A2
040aft
siemens mosfet BSM 50
BSM181C
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BT diode
Abstract: ECONOPACK mounting instructions bsm 25 gd 1200 n2 bsm 75 gd 120 n2 bsm 50 gd 120 n2 calculation of IGBT snubber siemens igbt BSM 200 GA 120 BSM15GD120DN2 diode bym 26 siemens igbt BSM 100
Text: Technische Angaben Technical Information SIEMENS 1 Übersicht IGBT-Module 1 O verview IG BT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V,
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Untitled
Abstract: No abstract text available
Text: SIMOPAC MOSFET Module VDS lD ^ D S o n • • • • • • • BSM 244 F = 400 V = 2 x 45 A = 0.1 Q Power module Half-bridge FREDFET N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 2 a ’ ) Type Ordering code
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C67076-A1155-A2
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Untitled
Abstract: No abstract text available
Text: Ç IEM FM S SIMOPAC MOSFET Module BSM 691 F Vds = 1000 V = 6 x 4.8 A ^DS on = 2.5 ß lD • • • • • • • Power module 3-phase full-bridge FREDFET N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 3 a 1)
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C67076-A1502-A2
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