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Vishay Siliconix SIHB16N50C-E3 MOSFET N-CH 500V 16A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHB16N50C-E3	Tube			1,000	1 - 10 - 100 - 1000 $2.9 10000 $2.9	Buy Now
Bristol Electronics	SIHB16N50C-E3		800			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SIHB16N50C-E3		640			1 $6.6 10 $6.6 100 $6.6 1000 $3.3 10000 $3.3	Buy Now
	SIHB16N50C-E3		6			1 $6.6 10 $3.3 100 $3.3 1000 $3.3 10000 $3.3	Buy Now

SIHB16N50C Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIHB16N50C-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 16A D2PAK		Original	PDF

SIHB16N50C Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved	Original	PDF	SiHP16N50C SiHB16N50C SiHF16N50C O-220AB O-220 2002/95/EC O-263) SiHP16N50C-E3
731 MOSFET Abstract: AN609 SiHP16N50C SiHF Text: SiHP16N50C_RC, SiHB16N50C_RC, SiHF16N50C_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	SiHP16N50C SiHB16N50C SiHF16N50C AN609, O220AB, 14-Apr-10 731 MOSFET AN609 SiHF
Untitled Abstract: No abstract text available Text: SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved	Original	PDF	SiHP16N50C SiHB16N50C SiHF16N50C O-220AB O-220 2002/95/EC O-263) SiHP16N50C-E3
Untitled Abstract: No abstract text available Text: SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved	Original	PDF	SiHP16N50C SiHB16N50C SiHF16N50C O-220AB O-220 2002/95/EC O-263) SiHP16N50C-E3
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 500 V, 16 A with RDS on max. = 380 mW at VGS = 10 V AND TEC I INNOVAT O L OGY SiHP16N50C-E3, SiHF16N50C-E3, SiHB16N50C-E3, SiHG16N50C-E3 N HN POWER MOSFETs O 19 62-2012 High-Voltage MOSFETs - 500 V N-Channel with Gen. 6.4 Cell Technology	Original	PDF	SiHP16N50C-E3 SiHF16N50C-E3 SiHB16N50C-E3 SiHG16N50C-E3 13-Jun-11 VMN-PT0246-1208
Untitled Abstract: No abstract text available Text: SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved	Original	PDF	SiHP16N50C SiHB16N50C SiHF16N50C O-220AB O-220 2002/95/EC O-263) SiHB16N50C-E3 SiHF16N50C-E3
Untitled Abstract: No abstract text available Text: SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved	Original	PDF	SiHP16N50C SiHB16N50C SiHF16N50C O-220AB O-220 2002/95/EC O-263) SiHB16N50C-E3 SiHF16N50C-E3
SiHP16N50C Abstract: ktp12 MJ-38 SIHF16N50C-E3 Text: SiHP16N50C, SiHB16N50C, SiHF16N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved	Original	PDF	SiHP16N50C SiHB16N50C SiHF16N50C O-220AB O-220 2002/95/EC O-263) ktp12 MJ-38 SIHF16N50C-E3
Untitled Abstract: No abstract text available Text: SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved	Original	PDF	SiHP16N50C SiHB16N50C SiHF16N50C O-220AB O-220 2002/95/EC O-263) SiHP16N50C-E3
Untitled Abstract: No abstract text available Text: SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved	Original	PDF	SiHP16N50C SiHB16N50C SiHF16N50C O-220AB O-220 2002/95/EC O-263) SiHB16N50C-E3 SiHF16N50C-E3
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . HIGH-VOLTAGE POWER MOSFETs Devices Use Vishay Planar Cell Technology to Minimize On-Resistance and Withstand High Energy Pulses KEY BENEFITS • 16 A, 500 V, RDS on max. = 380 mW at VGS = 10 V • Low gate charge: Qg max. = 68 nC	Original	PDF	SiHP16 SiHF16 SiHB16 SiHG16 2002/95/EC SiHP16N50C-E3 SiHF16N50C-E3 SiHB16N50C-E3 VMN-PT0246-1010