SIHD3N50D-GE3 Search Results
SIHD3N50D-GE3 Price and Stock
Vishay Siliconix SIHD3N50D-GE3MOSFET N-CH 500V 3A TO252AA |
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SIHD3N50D-GE3 | Tube | 2,980 | 1 |
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Vishay Intertechnologies SIHD3N50D-GE3Mosfet, N Channel, 500V, 3A, To-252Aa-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SIHD3N50D-GE3 |
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SIHD3N50D-GE3 | Cut Tape | 3,000 |
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SIHD3N50D-GE3 | 1 |
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Vishay Intertechnologies SIHD3N50DGE3POWER MOSFET Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHD3N50DGE3 | 3,000 |
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SIHD3N50D-GE3 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SIHD3N50D-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 3A TO252 DPAK | Original |