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    SIHD3N50D-GE3 Price and Stock

    Vishay Siliconix SIHD3N50D-GE3

    MOSFET N-CH 500V 3A TO252AA
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    DigiKey SIHD3N50D-GE3 Tube 2,980 1
    • 1 $1.31
    • 10 $0.825
    • 100 $1.31
    • 1000 $0.38612
    • 10000 $0.38612
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    Vishay Intertechnologies SIHD3N50D-GE3

    Mosfet, N Channel, 500V, 3A, To-252Aa-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SIHD3N50D-GE3
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    Newark SIHD3N50D-GE3 Cut Tape 3,000
    • 1 -
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    SIHD3N50D-GE3 Reel 3,000
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    TME SIHD3N50D-GE3 1
    • 1 $0.918
    • 10 $0.615
    • 100 $0.426
    • 1000 $0.374
    • 10000 $0.374
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    Vishay Intertechnologies SIHD3N50DGE3

    POWER MOSFET Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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    ComSIT USA SIHD3N50DGE3 3,000
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    SIHD3N50D-GE3 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHD3N50D-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 3A TO252 DPAK Original PDF