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Vishay Siliconix SIHFBC30AS-GE3 SIHFBC30AS-GE3 N-channel MOSFET Transistor, 3.6 A, 600 V, 3-Pin D2PAK \| Siliconix / Vishay SIHFBC30AS-GE3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SIHFBC30AS-GE3	Bulk			10	1 - 10 $1.11 100 $1.04 1000 $0.94 10000 $0.94	Get Quote
Vishay Intertechnologies SIHFBC30AS-GE3 Transistor: N-MOSFET; unipolar; 600V; 2.3A; Idm: 14A; 74W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIHFBC30AS-GE3				1	1 $1.2 10 $1.08 100 $0.86 1000 $0.8 10000 $0.8	Get Quote
Vishay Intertechnologies SIHFBC30ASTRR-GE3 MOSFET N-CHANNEL 600V (Alt: SIHFBC30ASTRR-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
EBV Elektronik	SIHFBC30ASTRR-GE3			9 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SIHFBC30AS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration	Original	PDF	IRFBC30AS, IRFBC30AL, SiHFBC30AS SiHFBC30AL O-262) O-263) 12-Mar-07
IRFBC30 Abstract: IRFBC30AL IRFBC30AS SiHFBC30AL SiHFBC30AL-E3 SiHFBC30AS SiHFBC30AS-E3 IRFBC30ALPBF Text: IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration	Original	PDF	IRFBC30AS, IRFBC30AL, SiHFBC30AS SiHFBC30AL O-262) O-263) 18-Jul-08 IRFBC30 IRFBC30AL IRFBC30AS SiHFBC30AL-E3 SiHFBC30AS-E3 IRFBC30ALPBF
Untitled Abstract: No abstract text available Text: IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt	Original	PDF	IRFBC30AS, SiHFBC30AS IRFBC30AL, SiHFBC30AL O-262) O-263) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC
Untitled Abstract: No abstract text available Text: IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt	Original	PDF	IRFBC30AS, SiHFBC30AS IRFBC30AL, SiHFBC30AL 2002/95/EC O-262) O-263) 2002/95/EC. 2002/95/EC 2011/65/EU.
4139 temperature Abstract: 9571 AN609 IRFBC30AL IRFBC30AS SiHFBC30AL SiHFBC30AS 74139 Text: IRFBC30AS_RC, SiHFBC30AS_RC, IRFBC30AL_RC, SiHFBC30AL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	IRFBC30AS SiHFBC30AS IRFBC30AL SiHFBC30AL AN609, 20-Apr-10 4139 temperature 9571 AN609 74139
Untitled Abstract: No abstract text available Text: IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt	Original	PDF	IRFBC30AS, SiHFBC30AS IRFBC30AL, SiHFBC30AL O-262) O-263) 2002/95/EC 11-Mar-11
Untitled Abstract: No abstract text available Text: IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt	Original	PDF	IRFBC30AS, SiHFBC30AS IRFBC30AL, SiHFBC30AL O-262) O-263) 2002/95/EC 11-Mar-11
IRFBC30AL Abstract: IRFBC30AS SiHFBC30AL SiHFBC30AS SiHFBC30AS-E3 Text: IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt	Original	PDF	IRFBC30AS, SiHFBC30AS IRFBC30AL, SiHFBC30AL 2002/95/EC O-262) O-263) 11-Mar-11 IRFBC30AL IRFBC30AS SiHFBC30AS-E3
A1HB Abstract: IRFBC30 irfbc Text: IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt	Original	PDF	IRFBC30AS, SiHFBC30AS IRFBC30AL, SiHFBC30AL O-262) O-263) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC A1HB IRFBC30 irfbc
Untitled Abstract: No abstract text available Text: IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt	Original	PDF	IRFBC30AS, SiHFBC30AS IRFBC30AL, SiHFBC30AL 2002/95/EC O-262) O-263) 2002/95/EC. 2002/95/EC 2011/65/EU.
SiHFBC30AL-GE3 Abstract: No abstract text available Text: IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt	Original	PDF	IRFBC30AS, SiHFBC30AS IRFBC30AL, SiHFBC30AL O-262) O-263) 2002/95/EC 18-Jul-08 SiHFBC30AL-GE3