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irfp31n50 Abstract: No abstract text available Text: IRFP31N50L_RC, SiHFP31N50L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	IRFP31N50L SiHFP31N50L AN609, 14-Jun-10 irfp31n50
IRFP31N50L Abstract: irfp31n50 Text: IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.15 Available RoHS* Qg (Max.) (nC) 210 Qgs (nC) 58 • Lower Gate Charge Results in Simpler Drive	Original	PDF	IRFP31N50L, SiHFP31N50L O-247 18-Jul-08 IRFP31N50L irfp31n50
Untitled Abstract: No abstract text available Text: IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.15 Available RoHS* Qg (Max.) (nC) 210 Qgs (nC) 58 • Lower Gate Charge Results in Simpler Drive	Original	PDF	IRFP31N50L, SiHFP31N50L 2002/95/EC O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
7912UC Abstract: IRFP31N50L IRFP31N50LPbF ISD 1400 d irfp31n50 Text: IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.15 Available RoHS* Qg (Max.) (nC) 210 Qgs (nC) 58 • Lower Gate Charge Results in Simpler Drive	Original	PDF	IRFP31N50L, SiHFP31N50L O-247 2002/95/EC 18-Jul-08 7912UC IRFP31N50L IRFP31N50LPbF ISD 1400 d irfp31n50
Untitled Abstract: No abstract text available Text: IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.15 Available RoHS* Qg (Max.) (nC) 210 Qgs (nC) 58 • Lower Gate Charge Results in Simpler Drive	Original	PDF	IRFP31N50L, SiHFP31N50L 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.15 Available RoHS* Qg (Max.) (nC) 210 Qgs (nC) 58 • Lower Gate Charge Results in Simpler Drive	Original	PDF	IRFP31N50L, SiHFP31N50L O-247 12-Mar-07
Untitled Abstract: No abstract text available Text: IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.15 Available RoHS* Qg (Max.) (nC) 210 Qgs (nC) 58 • Lower Gate Charge Results in Simpler Drive	Original	PDF	IRFP31N50L, SiHFP31N50L 2002/95/EC O-247AC 11-Mar-11
Untitled Abstract: No abstract text available Text: IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.15 Available RoHS* Qg (Max.) (nC) 210 Qgs (nC) 58 • Lower Gate Charge Results in Simpler Drive	Original	PDF	IRFP31N50L, SiHFP31N50L 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
IRFP31N50LP Abstract: No abstract text available Text: IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.15 Available RoHS* Qg (Max.) (nC) 210 Qgs (nC) 58 • Lower Gate Charge Results in Simpler Drive	Original	PDF	IRFP31N50L, SiHFP31N50L 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFP31N50LP