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Vishay Siliconix SIHG22N60EF-GE3 MOSFET N-CH 600V 19A TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHG22N60EF-GE3	Tube	793		1	1 $5.16 10 $5.16 100 $5.16 1000 $1.90875 10000 $1.90875	Buy Now
Vishay Siliconix SIHG22N60E-GE3 MOSFET N-CH 600V 21A TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHG22N60E-GE3	Tube	432		1	1 $5.34 10 $5.34 100 $5.34 1000 $2 10000 $2	Buy Now
Quest Components	SIHG22N60E-GE3		63			1 $4.5 10 $2.25 100 $2.25 1000 $2.25 10000 $2.25	Buy Now
Vishay Siliconix SIHG22N60E-E3 MOSFET N-CH 600V 21A TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHG22N60E-E3	Tube	12		1	1 $5.34 10 $5.34 100 $5.34 1000 $2 10000 $2	Buy Now
Bristol Electronics	SIHG22N60E-E3		850			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SIHG22N50D-E3 MOSFET N-CH 500V 22A TO247AC
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DigiKey	SIHG22N50D-E3	Tube			500	1 - 10 - 100 - 1000 $1.91584 10000 $1.91584	Buy Now
Bristol Electronics	SIHG22N50D-E3		350			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SIHG22N60S-E3 MOSFET N-CH 600V 22A TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHG22N60S-E3	Tube			500	1 - 10 - 100 - 1000 $2.6729 10000 $2.6729	Buy Now

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SIHG22N Datasheets (10)

Part	Manufacturer	Description	Datasheet Type	PDF
SIHG22N50D-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 22A TO-247AC	Original	PDF
SIHG22N50D-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 22A TO-247AC	Original	PDF
SIHG22N60AE-GE3	Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 20A TO247AC	Original	PDF
SIHG22N60AEL-GE3	Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 600V	Original	PDF
SIHG22N60E-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A TO247AC	Original	PDF
SIHG22N60EF-GE3	Vishay Siliconix	MOSFET N-CH 600V 19A TO247AC	Original	PDF
SIHG22N60E-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A TO247AC	Original	PDF
SIHG22N60EL-GE3	Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 21A TO247AC	Original	PDF
SIHG22N60S-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 22A TO247	Original	PDF
SIHG22N65E-GE3	Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 22A TO-247AC	Original	PDF

SIHG22N Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SiHG22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.18 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single Note * This datasheet provides information about parts that are	Original	SiHG22N65E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SiHG22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • • • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.190 98 Qgs (nC) 17 Qgd (nC) 25 Configuration Single D TO-247AC	Original	SiHG22N60S O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SIHG22N60E Abstract: No abstract text available Text: SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses	Original	SiHG22N60E O-247AC 2002/95/EC 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PPRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	SiHG22N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses	Original	SiHG22N60E 2002/95/EC O-247AC 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	SiHG22N50D O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SiHG22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.18 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single Note * This datasheet provides information about parts that are	Original	SiHG22N65E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SiHG22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation One • Halogen-free According to IEC 61249-2-21 Definition • High EAR Capability • Lower Figure-of-Merit Ron x Qg • 100 % Avalanche Tested	Original	SiHG22N60S O-247AC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: SiHG22N 6 0 S, SiHP22N 6 0 S, SiHB22N 6 0 S, SiHF22N 6 0 S Super Junction Technology in TO-220, TO-247, TO-220F, and TO-263 Packages Key Benefits • • • • • • • • • • • Dramatic reduction of maximum RDS on at VGS = 10 V: 0.190 Ω Ultra-low gate charge: Qg = 98 nC	Original	SiHG22N SiHP22N SiHB22N SiHF22N O-220, O-247, O-220F, O-263 O-263)	PDF
Untitled Abstract: No abstract text available Text: SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	SiHG22N50D O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
mosfet 452 Abstract: No abstract text available Text: SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	SiHG22N50D O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 mosfet 452	PDF
Untitled Abstract: No abstract text available Text: SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	SiHG22N60E O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: SiHG22N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	SiHG22N65E AN609, 7589u 6282m 6682m 0918u 23-Jul-14	PDF
SiHG22N60EL_RC Abstract: No abstract text available Text: SiHG22N60EL_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	SiHG22N60EL AN609, 7589u 6282m 6682m 0918u 03-Nov-14 SiHG22N60EL_RC	PDF

SiHG22N60S Abstract: No abstract text available Text: SiHG22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability	Original	SiHG22N60S O-247 2002/95/EC SiHG22N60S-E3 18-Jul-08	PDF
SiHG22N60S Abstract: No abstract text available Text: SiHG22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Halogen-free According to IEC 61249-2-21 Definition 650 RDS(on) () VGS = 10 V 0.190 98 • High EAR Capability Qgs (nC) 17 • Lower Figure-of-Merit Ron x Qg Qgd (nC)	Original	SiHG22N60S O-247AC 2002/95/EC 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: SiHG22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation One • Halogen-free According to IEC 61249-2-21 Definition • High EAR Capability • Lower Figure-of-Merit Ron x Qg • 100 % Avalanche Tested	Original	SiHG22N60S O-247AC 2002/95/EC 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: SiHG22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Halogen-free According to IEC 61249-2-21 Definition 650 RDS(on) () VGS = 10 V 0.190 98 • High EAR Capability Qgs (nC) 17 • Lower Figure-of-Merit Ron x Qg Qgd (nC)	Original	SiHG22N60S 2002/95/EC O-247AC O-247AC SiHG22N60S-E3 SiHG22N60S-GE3 11-Mar-11	PDF
SiHG22N60S Abstract: No abstract text available Text: SiHG22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability	Original	SiHG22N60S O-247 2002/95/EC SiHG22N60S-E3 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: SiHG22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability	Original	SiHG22N60S O-247 2002/95/EC SiHG22N60S-E3 18-Jul-08	PDF
SiHG22N50 Abstract: No abstract text available Text: SiHG22N50D_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	SiHG22N50D AN609, 9202m 8712m 3875m 7679m 0616m 2369m 4858m 4969u SiHG22N50	PDF
sihg22n60e Abstract: No abstract text available Text: SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	SiHG22N60E O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	SiHG22N60E O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: SiHG22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • • • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.190 98 Qgs (nC) 17 Qgd (nC) 25 Configuration Single D TO-247AC	Original	SiHG22N60S O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF

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Vishay Siliconix SIHG22N60EF-GE3

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SIHG22N Datasheets (10)

SIHG22N Datasheets Context Search

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SIHG22N60E

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mosfet 452

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SiHG22N60EL_RC

SiHG22N60S

SiHG22N60S

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SiHG22N60S

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SiHG22N50

sihg22n60e

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