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    BSM150GB100D

    Abstract: bsm 256
    Text: SIEMENS BSM150GB100D BSM 150 GAL 100 D IGBT Module P re lim in a ry D a ta VCE = 1000 V / c = 2 x 2 0 0 A at Tc = 25 C l c = 2 x 1 5 0 A at fc = 80 C • Power module • Half-bridge/Chopper • Including fast free-wheel diodes • Package with insulated metal base plate


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    PDF BSM150GB100D C67076-A2102-A2 C67076-A2005-A2 BSM150 SII00207 bsm 256