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BSM10GD100 Abstract: BSM10GD100D Text: SIEMENS IGBT Module BSM 10 GD 100 D Preliminary Data VCE = 1000 V / c = 6 x 1 1 A at Tc = 25 "C / c = 6 x 1 0 A at r c = 40 C • Power module • 3-phase full bridge • Including fast free-wheel diodes • Package with insulated metal base plate • Package outlines/Circuit diagram: 6a1	OCR Scan	PDF	C67076-A2507-A52 SI100310 BSM10GD100D SII00313 BSM10GD100 BSM10GD100D
BSM10GD100D Abstract: BSM10GD100 siemens igbt btb 148 600 GGM5 transient Diode bge Text: bO E D • ÔE3SLiQS G G M 5 7 Ö 4 SIEMENS ^ 7 SIEMENS «SIEG AKTIENGESELLSCHAF BSM 10 GD 100 D IGBT Module Preliminary Data V CE = 1000 V I c = 6 x 11 A at T c = 25 C / c = 6 x 1 0 A a t 7'c = 40 C • • • • • Power m odule 3-phase full bridge Including fast free-wheel diodes	OCR Scan	PDF	GGM57Ã C67076-A2507-A52 BSM10GD100D BSM10GD100 siemens igbt btb 148 600 GGM5 transient Diode bge
IGBT K 40 T 1202 Abstract: 40 t 1202 igbt BUP306D Text: SIEMENS BUP306D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type BUP 306D VCE h 1200V 23A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code	OCR Scan	PDF	O-218AB BUP306D Q67040-A4222-A2 SII003 IGBT K 40 T 1202 40 t 1202 igbt BUP306D
din 1190 diode Abstract: 305d Text: SIEMENS BUP 305 D IGBT W ith Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type BUP 305 D VCB h 1200V 12A Pin 1 Pin 2 Pin 3 G C E Package	OCR Scan	PDF	O-218AB Q67040-A4225-A2 SII00325 BUP305D din 1190 diode 305d
Untitled Abstract: No abstract text available Text: SIEMENS IG B T M o d u le Prelim inary Data BSM 0 5 G D 100D VCE= 1000 V / c = 6 x 5.5 A at Tc = 25 "C / c = 6 x 5.0 A at T c = 40 C • • • • • Power module 3-phase full bridge Including fast free-wheel diodes Package with insulated metal base plate	OCR Scan	PDF	C67076-A2506-A52