NTE2635
Abstract: NTE263
Text: NTE2635 Silicon NPN Transistor Horizontal Deflection w/Internal Damper Diode Description: The NTE2635 is an enhanced performance, new generation, high–voltage, high–speed switching NPN transistor with an integrated damper diode in a full–pack envelope intended for use in horizontal
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NTE2635
NTE2635
NTE263
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using of damper in Horizontal Output Transistor
Abstract: BU2508D
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2508D DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 700V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of
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BU2508D
using of damper in Horizontal Output Transistor
BU2508D
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TRANSISTOR bu2508df
Abstract: BU2508DF BU2508DF equivalent NPN Transistor 1500V TV power transistor datasheet Silicon Diode Switching Diode 700v using of damper in Horizontal Output Transistor 700 v power transistor
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2508DF DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 700V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of
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BU2508DF
TRANSISTOR bu2508df
BU2508DF
BU2508DF equivalent
NPN Transistor 1500V
TV power transistor datasheet
Silicon Diode Switching Diode 700v
using of damper in Horizontal Output Transistor
700 v power transistor
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BU2508DX
Abstract: transistor bu2508dx BU2508Dx equivalent using of damper in Horizontal Output Transistor NPN Transistor 1500V
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2508DX DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 700V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of
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BU2508DX
BU2508DX
transistor bu2508dx
BU2508Dx equivalent
using of damper in Horizontal Output Transistor
NPN Transistor 1500V
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diode 3A 1500V
Abstract: bu2506dx using of damper in Horizontal Output Transistor
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2506DX DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 700V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of
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BU2506DX
diode 3A 1500V
bu2506dx
using of damper in Horizontal Output Transistor
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NPN Transistor 1.5A 700V
Abstract: No abstract text available
Text: NTE2318 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2318 is a high–voltage, high–speed, switching NPN transistor with an internal damper diode in a TO218 type package. This device is specifically designed for use in large screen color deflection
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NTE2318
NTE2318
NPN Transistor 1.5A 700V
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Untitled
Abstract: No abstract text available
Text: SSM03N70F,I N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Dynamic dv/dt rating D Repetitive-avalanche rated Fast switching G Simple drive requirement BVDSS 600/650/700V R DS ON 3.6Ω ID 3.3A S Description The SSM03N70 series are specially designed as main switching devices for universal
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SSM03N70F
600/650/700V
SSM03N70
265VAC
O-220FM
T0-220CFM
O-220CFM
SSM03N70I
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Untitled
Abstract: No abstract text available
Text: SSM03N70P,R N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Dynamic dv/dt rating BV DSS 600/650/700V D Repetitive-avalanche rated Fast switching G Simple drive requirement R DS ON 3.6Ω ID 3.3A S Description The SSM03N70 series are specially designed as main switching devices for
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SSM03N70P
600/650/700V
SSM03N70
265VAC
O-220
O-262
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04n70bf
Abstract: 04N70BF-H SSM04N70BGF-H 04N70 Transistor 04N70BF 04n70b marking code C2 diode marking codes transistors SSs SSM04 ssm04n70bgfh
Text: SSM04N70BGF-H N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS 700V R DS ON 2.4Ω ID 4A DESCRIPTION The SSM04N70BGF-H achieves fast switching performance with low gate charge without a complex drive circuit. It is suitable for high voltage applications such as AC/DC
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SSM04N70BGF-H
SSM04N70BGF-H
O-220FM
O-220FM
04n70bf
04N70BF-H
04N70
Transistor 04N70BF
04n70b
marking code C2 diode
marking codes transistors SSs
SSM04
ssm04n70bgfh
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Untitled
Abstract: No abstract text available
Text: SSM04N70BP,R N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge D Simple drive requirement Fast switching BV DSS 600/650/700V R DS ON 2.4Ω 4A ID G S Description The SSM04N70BR is in a TO-262 package, which is widely used for G D commercial and industrial applications, and is well suited for universal
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SSM04N70BP
600/650/700V
SSM04N70BR
O-262
265VAC
SSM04N70BP
O-220
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700v 5A mosfet
Abstract: marking codes transistors SSs ssm03n70gp-h 03n7
Text: SSM03N70GP-H N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS 700V R DS ON 4.4Ω ID 2.5A DESCRIPTION The SSM03N70GP-H achieves fast switching performance with low gate charge without a complex drive circuit. It is suitable for high voltage applications such as AC/DC
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SSM03N70GP-H
SSM03N70GP-H
O-220
O-220
700v 5A mosfet
marking codes transistors SSs
03n7
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Untitled
Abstract: No abstract text available
Text: TSC148D High Voltage Fast-Switching NPN Power Transistor TO-220 ITO-220 TO-263-2L 2 D PAK PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 8A 1.5V @ IC / IB = 5A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC148D
O-220
ITO-220
O-263-2L
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TRANSISTOR K 1507
Abstract: 1348 transistor TRANSISTOR D 1785 silicon power diode to263 3A fast-switching diode HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 700v 1a marking code 0632 Transistor 1507 POWER TRANSISTOR TO-220
Text: TSC148D High Voltage Fast-Switching NPN Power Transistor TO-220 ITO-220 TO-263 2 D PAK PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 8A 1.5V @ IC / IB = 5A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC148D
O-220
ITO-220
O-263
TSC148DCZ
TSC148DCI
TSC148DCM
O-263
TRANSISTOR K 1507
1348 transistor
TRANSISTOR D 1785
silicon power diode to263
3A fast-switching diode
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 700v 1a
marking code 0632
Transistor 1507
POWER TRANSISTOR TO-220
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nte98
Abstract: No abstract text available
Text: NTE98 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE98 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly
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NTE98
NTE98
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Untitled
Abstract: No abstract text available
Text: AUIRLR3110Z AUIRLU3110Z Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D G S Description VDSS
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AUIRLR3110Z
AUIRLU3110Z
EIA-481
EIA-541.
EIA-481.
AUIRLR/U3110Z
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5303D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE DESCRIPTION The UTC 5303D is a high voltage silicon triple diffused type NPN transistor with diode. This chip is built in free-wheeling diode , makeing efficient anti-saturation operation.
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5303D
5303D
O-251
5303DL
5303DG
5303D-TM3-T
5303DL-TM3-T
5303DG-TM3-T
QW-R223-004
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transistor M3004
Abstract: str TV SMPS STV9302A lm317x flyback MC34063 STV0499 mc34063 step down with mosfet LED DRIVER BY MC34063 mc34063 step up with mosfet STV9306
Text: Paving the Way to the New Era of Digital TV Innovative, Evolutive, Future-proof… With more than twenty years experience in developing TV solutions and leadership in set-top box and MPEG2 decoding, today STMicroelectronics offers comprehensive, cost-efficient
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j5304d
Abstract: j5304 transistor j5304d FJE5304DTU NPN transistor Electronic ballast NPN J5304D to-126 npn switching transistor 400v free transistor and ic equivalent data o
Text: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application
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FJE5304D
FJE5304D
O-126
FJE5304DTU
j5304d
j5304
transistor j5304d
NPN transistor Electronic ballast
NPN J5304D
to-126 npn switching transistor 400v
free transistor and ic equivalent data o
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003D-P Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage
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MJE13003D-P
MJE13003D-P
MJE13003DL-P-x-T92-B
MJE13003DG-P-x-T92-B
MJE13003DL-P-x-T92-K
MJE13003DG-P-x-T92-K
QW-R201-085
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MJE13003D
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds.
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MJE13003D
MJE13003D
MJE13003DL-T60-K
MJE13003DG-T60-K
O-126
QW-R204-025
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AUFP1405
Abstract: IRS 640 AUIRFP1405
Text: PD - 97724 AUTOMOTIVE GRADE AUIRFP1405 Features l l l l l l l l l HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax
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AUIRFP1405
AUFP1405
IRS 640
AUIRFP1405
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MJE13003D
Abstract: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR *13003d
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds.
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MJE13003D
MJE13003D
MJE13003DL-T60-K
MJE13003DG-T60-K
O-126
QW-R204-025
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
*13003d
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Untitled
Abstract: No abstract text available
Text: PD - 97724 AUTOMOTIVE GRADE AUIRFP1405 Features l l l l l l l l l HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax
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AUIRFP1405
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Pnp transistor smd ba rn
Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj
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OCR Scan
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Q9001-1994i
CMSH1-20ML
Pnp transistor smd ba rn
transistor marking code 12W SOT-23
smd transistor marking p69
TRANSISTOR SMD MARKING CODE s2a
transistor smd bc rn
TRANSISTOR SMD MARKING CODE bc ru
1ff TRANSISTOR SMD MARKING CODE
smd transistor P2D
Motorola transistor smd marking codes
SMD TRANSISTOR MARKING P28
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