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    SILICON PHOTODIODE Search Results

    SILICON PHOTODIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    P104 Coilcraft Inc Silicon Controlled Rectifier, Visit Coilcraft Inc
    5962-8757701RA Renesas Electronics Corporation Microcircuit, CMOS, Octal Bus Transceiver, Monolithic Silicon Visit Renesas Electronics Corporation
    HXT45430-DNU Renesas Electronics Corporation 112Gb/s PAM4 Silicon Photonic Modulator Driver Visit Renesas Electronics Corporation

    SILICON PHOTODIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IR photodiode

    Abstract: PSS1705 silicon photodiode
    Text: DATA SHEET PSS1705 SILICON PHOTODIODE TYPE PSS1705 PSS1705 is a PIN Silicon PHOTODIODE with an Active Area 0.88 mm2. It combines excellent blue light sensitivity with more than average Near IR response. This product is packaged in a ceramic case with a plastic lens. Pacific Silicon Sensor Inc. can also fabricate Silicon Detectors to your


    Original     		PDF PSS1705 PSS1705 ACTIV00 IR photodiode silicon photodiode

    Photodiodes

    Abstract: 13 dsi 005 Melles Melles Griot Photodiodes Germanium PIN 13DAS011 13DSI001 f-19 10414 13 DMA 015
    Text: Chpt. 49 Final 10/11/99 11:34 AM Page 49.2 Laser-Beam Characterization Available in: ✔ Production Quantities ✔ Custom Configurations Silicon Photodiodes Photodiodes, Integrating Spheres & Amplifiers UNMOUNTED SILICON PHOTODIODES Single-element planar-diffused silicon photodiodes are ideal


    Original     		PDF 10-mm2 100-mm2 25-mmdiameter wh007 011/C3 011/C 10-nm Photodiodes 13 dsi 005 Melles Melles Griot Photodiodes Germanium PIN 13DAS011 13DSI001 f-19 10414 13 DMA 015

    PSS15-7-TO5

    Abstract: PIN photodiode 500 nm TO5 package To5 transistor
    Text: DATA SHEET PSS15-7-TO5 SILICON PHOTODIODE TYPE PSS15-7-TO5 PSS15-7-TO5 is a PIN Silicon PHOTODIODE with an Active Area 5 mm2. It combines excellent blue light sensitivity with more than average Near IR response. This product is packaged in a hermetically sealed TO5 case with a glass window. Pacific Silicon Sensor Inc. can also fabricate Silicon


    Original     		PDF PSS15-7-TO5 PSS15-7-TO5 PIN photodiode 500 nm TO5 package To5 transistor

    PSS15-7-P

    Abstract: PIN photodiode 500 nm
    Text: DATA SHEET PSS15-7-P LARGE AREA SILICON PHOTODIODE PSS15-7-P PSS15-7-P is a PIN Silicon PHOTODIODE with an Active Area 15 mm2. It combines excellent blue light sensitivity with more than average Near IR response. This product is packaged on PCB board without a window. Pacific Silicon Sensor Inc. can also fabricate Silicon Detectors to your


    Original     		PDF PSS15-7-P PSS15-7-P PIN photodiode 500 nm

    To5 transistor

    Abstract: PIN photodiode 500 nm
    Text: DATA SHEET PSS5-7-TO5 SILICON PHOTODIODE TYPE PSS5-7-TO5 PSS5-7-TO5 is a PIN Silicon PHOTODIODE with an Active Area 5 mm2. It combines excellent blue light sensitivity with more than average Near IR response. This product is packaged in a hermetically sealed TO5 case with a glass window. Pacific Silicon Sensor Inc. can also fabricate Silicon


    Original     		PDF

    Photodiode laser detector BPX-65

    Abstract: UDT Sensors BPX65 high sensitive PIN-HR008 BPX65 PIN-HR040L
    Text: High Speed Silicon Photodiodes High Speed Silicon Series UDT Sensors High Speed Silicon series are small area devices optimized for fast response time or High bandwith applications. The BPX-65 complements the rest of the high speed group with an industry standard.


    Original     		PDF BPX-65 Photodiode laser detector BPX-65 UDT Sensors BPX65 high sensitive PIN-HR008 BPX65 PIN-HR040L

    TOX9103

    Abstract: No abstract text available
    Text: Select Products Here TOX 9103 Silicon Photodetector Go DESCRIPTION FEATURES The TOX9103 is a high performance silicon photodiode designed to operate in the photo conductive mode. High resistivity silicon is used to provide high 900 nm responsivity and low capacitance at low


    Original     		PDF OX9103 900nm com/catalog/tox9103/tox9103 TOX9103

    Untitled

    Abstract: No abstract text available
    Text: Standard-Area Silicon Avalanche Photodiodes 230, 500 µm PD-LD Inc. offers 2 sizes of standard Silicon Avalanche Photodiodes in several styles of fiber coupled packages. The semiconductors are available in two standard sizes: 230 micron or 500 micron active areas. Our Silicon APDs cover


    Original     		PDF 880nm 905nm

    avalanche photodiodes

    Abstract: AD-1100-9 AD-1900-9 AD-230-9 AD-2500-9 AD-3000-9 AD-5000-9 AD-500-9 AD-800-9 Silicon apd
    Text: Data Sheet Pacific Silicon Sensor Inc. Series 9: NIR Enhanced Response Silicon Avalanche Photodiodes Pacific Silicon Sensor’s APD product line comprises of two series’ of devices, each series is designed and produced to meet certain specifications and design goals. While we offer a variety of


    Original     		PDF AD-230-90 AD500-9-1 905nm avalanche photodiodes AD-1100-9 AD-1900-9 AD-230-9 AD-2500-9 AD-3000-9 AD-5000-9 AD-500-9 AD-800-9 Silicon apd

    AD-230-9

    Abstract: AD500 AD-500-9 Pacific Silicon Sensor 30009 905nm
    Text: Data Sheet Pacific Silicon Sensor Inc. Series 9: NIR Enhanced Response Silicon Avalanche Photodiodes Pacific Silicon Sensor’s APD product line comprises of two series’ of devices, each series is designed and produced to meet certain specifications and design goals. While we offer a variety of


    Original     		PDF AD-230-90 AD500-9-1 905nm AD-230-9 AD500 AD-500-9 Pacific Silicon Sensor 30009 905nm

    C30817E

    Abstract: C30955EH
    Text: PhotodiodeS฀For฀hiGh-PerFormAnce฀APPlicAtionS฀ Avalanche Photodiodes Silicon and InGaAs APDs Avalanche Photodiodes – Silicon and InGaAs APDs Applications • Laser range inder • Free space communication Product฀description hese rear entry “reach-through” silicon APDs ofer the best compromise in terms of cost and


    Original     		PDF C30902 C30902EH, C30921EH C30902SH, C30921SH C30817E C30955EH

    LARGE SURFACE AREA PHOTODIODE

    Abstract: large area quadrant photodiode quadrant photodiode quadrant silicon photodiode QP50-6 QP50-6-TO8 QP50-6-SM 50 um photodiode
    Text: Data Sheet Pacific Silicon Sensor Inc. QP50-6-SM LARGE AREA QUADRANT SILICON PHOTODIODE QP50-6-SM QP50-6-SM is a large area quadrant silicon photodiode with a total active area of 50 mm2, in a surface mounting package. The part features very small separation between segments of 42 µm.


    Original     		PDF QP50-6-SM QP50-6-SM QP50-6-TO8. LARGE SURFACE AREA PHOTODIODE large area quadrant photodiode quadrant photodiode quadrant silicon photodiode QP50-6 QP50-6-TO8 50 um photodiode

    large area quadrant photodiode

    Abstract: quadrant photodiode LARGE SURFACE AREA PHOTODIODE quadrant silicon photodiode PSS-QP50-6-SM
    Text: Data Sheet Pacific Silicon Sensor Inc. PSS-QP50-6-SM LARGE AREA QUADRANT SILICON PHOTODIODE PSS-6-SM PSS-QP50-6-SM is a large area quadrant silicon photodiode with a total active area of 50mm2, in a surface mounting package. The part features very small separation between segments of 42µm. The


    Original     		PDF PSS-QP50-6-SM PSS-QP50-6-SM 50mm2, large area quadrant photodiode quadrant photodiode LARGE SURFACE AREA PHOTODIODE quadrant silicon photodiode

    AD-1100-8

    Abstract: avalanche photodiodes AD-230-8 AD500-1 120-190 ad500-13 rise time apd
    Text: Data Sheet Pacific Silicon Sensor Inc. Series 8: High Speed / High Gain at Low Bias Voltage Silicon Avalanche Photodiodes Pacific Silicon Sensor’s APD product line comprises of two series’ of devices, each series is designed and produced to meet certain specifications and design goals. While we offer a variety of


    Original     		PDF AD-2500-8 AD500-1 780nm AD-1100-8 avalanche photodiodes AD-230-8 120-190 ad500-13 rise time apd

    VTD34FSM

    Abstract: bpw photodiode
    Text: SILICON PHOTODIODE VTD34FSM BPW 34F INDUSTRY EQUIVALENT PRELIMINARY ENGINEERING DATA SHEET FEATURES PRODUCT DESCRIPTION • Infrared transmiting package • High sensitivity Planar silicon photodiode in an infrared transmitting, visible blocking molded plastic package.


    Original     		PDF VTD34FSM VTD34FSM bpw photodiode

    bpw 50

    Abstract: PerkinElmer fyd-1150 K/PerkinElmer fyd-1150
    Text: SILICON PHOTODIODE VTD34FSMH BPW 34F INDUSTRY EQUIVALENT PRELIMINARY ENGINEERING DATA SHEET FEATURES PRODUCT DESCRIPTION • Infrared transmiting package • High sensitivity Planar silicon photodiode in an infrared transmitting, visible blocking molded plastic package.


    Original     		PDF VTD34FSMH bpw 50 PerkinElmer fyd-1150 K/PerkinElmer fyd-1150

    Untitled

    Abstract: No abstract text available
    Text: STANDAR SILICON SENSORS ES Silicon Sensors offers a wide variety of silicon photodiodes configured for optimum performance. Silicon photodiodes respond in the spectral range from 250-1100 nm, with peak response around 900 nm. Device characteristics and spectral response can be


    OCR Scan     		PDF

    STBC-T08

    Abstract: LCBC-TO5
    Text: SILICON SENSORS INC b2E D • SILICON SENSORS 6253^22 00003^5 7^5 H S L S STBC-TO-5, LCBC-TO-5 STBC-TO-8, LCBCr-TO-8 Silicon PlanarDiffused Du¿üPhotodiodes TO-Packaged Dual Photodiodes Silicon Sensors is proud to offer its selection of standard and low-capacitance PIN planar dual


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: T0X9103 Silicon Photodetector Texas Optoelectronics, Inc. DESCRIPTION FEATURES The TOX9103 is a high performance silicon photodiode designed to operate in the photo conductive mode. High resistivity silicon is used to provide high 900 nm responsivity and low


    OCR Scan     		PDF T0X9103 OX9103 G00D524

    TOX9103

    Abstract: No abstract text available
    Text: T0X9103 Silicon Photodetector Texas Optoelectronics, Inc. DESCRIPTION FEATURES • • The TOX9103 is a high performance silicon photodiode designed to operate in the photo conductive mode. High resistivity silicon is used to provide high 900 nm responsivity and low


    OCR Scan     		PDF T0X9103 OX9103 TOX9103

    BPX92

    Abstract: No abstract text available
    Text: SIEMENS BPX92 SILICON PHOTODIODE FEATURES * Silicon Planar Photodiode * Transparent Plastic Case * 0.2* 5.08 mm Lead Spacing * Low D ark Current, 1 nA Maximum Ratings DESCRIPTION The BPX 92 is a silicon planar photodiode in a transparent plastic package. Its terminals


    OCR Scan     		PDF BPX92 BPX92

    MM53C

    Abstract: No abstract text available
    Text: 253922 SILICO N SE N S O R S IN C _ S I L I C O N S E N S O R S IN C 75 75C 0 Q 3 2 6 D T~ J> e | ö 5 S 3 T S S 0 Q □0 3 2 b S | ~ Síí i ' " '£ SILICON MESA PHOTODIODES • SILICON PLANAR PHOTODIODES SILICON BLUE-SENSITIVE PHOTODIODES • SILICON PIN PHOTODIODE


    OCR Scan     		PDF MM-53 MM-2010 2856K MM-53C MM-53 MM53C

    all type transistor equivalent

    Abstract: pin details of photo transistor block diagram circuit diagram for photointerrupter IR block photodiode phototransistor HV photodiode chip silicon Infrared Phototransistor pn junction diode structure high sensitivity reflective photo interrupter ir led PHOTODIODE
    Text: Introduction Detecting devices Photodiode When light is incident on a silicon PN junction, the light generates electron and hole pairs in the silicon crystal. When the energy of the incident light is greater than the silicon energy band gap Eg , the electrons and holes scatter in accordance with the concentration gradient of the


    OCR Scan     		PDF

    quadrant photodiode

    Abstract: SFH244S t2856
    Text: SFH244S SILICON FOUR QUADRANT PHOTODIODE FEATURES Maxim um Ratings * Silicon Photodiode in Planar Technology Operating and Storage Temperature T0p, T3 tg .-40°C to +80°C Isolation Voltage fV,s) . 100 V


    OCR Scan     		PDF SFH244S SFH244 quadrant photodiode SFH244S t2856