Untitled
Abstract: No abstract text available
Text: M1MA141KT1G, M1MA142KT1G Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.
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Original
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M1MA141KT1G,
M1MA142KT1G
SC-70
M1MA141KT1
M1MA142KT1
M1MA141KT1/D
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PDF
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M1MA141KT1
Abstract: M1MA141KT1G M1MA142KT1 M1MA142KT1G
Text: M1MA141KT1G, M1MA142KT1G Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.
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Original
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M1MA141KT1G,
M1MA142KT1G
SC-70
M1MA141KT1
M1MA142KT1
M1MA141KT1/D
M1MA141KT1
M1MA141KT1G
M1MA142KT1
M1MA142KT1G
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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Original
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LM1MA141KT1G
S-LM1MA141KT1G
LM1MA142KT1G
S-LM1MA142KT1G
AEC-Q101
70/SOTâ
LM1MA141KT1G
S-LM1MA141KT1G
LM1MA142KT1G
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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Original
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LM1MA141KT1G
LM1MA142KT1G
70/SOTâ
OT-323/SC-70
3000/Tape
LM1MA141KT3G
10000/Tape
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PDF
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M1MA141KT1
Abstract: M1MA142KT1 SMD310
Text: ON Semiconductort M1MA141KT1 M1MA142KT1 Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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Original
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M1MA141KT1
M1MA142KT1
M1MA141/2KT1
inch/3000
M1MA141/2KT3
inch/10
70/SOT
M1MA141Ks
M1MA141KT1
M1MA142KT1
SMD310
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PDF
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M1MA141KT1
Abstract: M1MA142KT1 M1MA142KT1G
Text: M1MA141KT1, M1MA142KT1 Preferred Device Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low power surface mount applications.
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Original
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M1MA141KT1,
M1MA142KT1
SC-70
M1MA141/2KT1
inch/3000
M1MA141/2KT3
inch/10
M1MA141KT1
M1MA141KT1
M1MA142KT1
M1MA142KT1G
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PDF
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diode l 0607
Abstract: BC237
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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Original
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M1MA141/2KT1
inch/3000
M1MA141/2KT3
inch/10
M1MA141KT1
M1MA142KT1
70/SOT
M1MA142KT1
MSC1621T1
diode l 0607
BC237
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PDF
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SOT-323
Abstract: M1MA141KT1G M1MA142KT1G marking mh sot323 LM1MA142K
Text: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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Original
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LM1MA141KT1G
LM1MA142KT1G
70/SOT
OT-323/SC-70
3000/Tape
LM1MA141KT3G
10000/Tape
SOT-323
M1MA141KT1G
M1MA142KT1G
marking mh sot323
LM1MA142K
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PDF
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M1MA141KT1
Abstract: M1MA141KT1G M1MA142KT1 M1MA142KT1G
Text: M1MA141KT1, M1MA142KT1 Preferred Device Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low power surface mount applications.
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Original
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M1MA141KT1,
M1MA142KT1
SC-70
M1MA141KT1
OT-323)
M1MA141KT1/D
M1MA141KT1
M1MA141KT1G
M1MA142KT1
M1MA142KT1G
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PDF
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort M1MA141KT1 M1MA142KT1 Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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Original
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M1MA141/2KT1
inch/3000
M1MA141/2KT3
inch/10
M1MA141KT1
M1MA142KT1
M1MA142KT1
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PDF
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23marking
Abstract: No abstract text available
Text: M1MA141KT1, M1MA142KT1 Preferred Device Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low power surface mount applications.
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Original
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M1MA141KT1,
M1MA142KT1
SC-70
M1MA141/2KT1
inch/3000
M1MA141/2KT3
inch/10
M1MA141KT1
M1MA142KT1
23marking
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PDF
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M1MA141KT1
Abstract: M1MA142KT1 SMD310
Text: ON Semiconductort Single Silicon Switching Diode M1MA141KT1 M1MA142KT1 This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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Original
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M1MA141KT1
M1MA142KT1
M1MA141/2KT1
inch/3000
M1MA141/2KT3
inch/10
70/SOT
r14525
M1MA141KT1
M1MA142KT1
SMD310
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PDF
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Diode marking CODE 5M
Abstract: M1MA141KT1G M1MA142KT1G
Text: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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Original
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LM1MA141KT1G
LM1MA142KT1G
70/SOT
OT-323/SC-70
3000/Tape
LM1MA141KT3G
10000/Tape
Diode marking CODE 5M
M1MA141KT1G
M1MA142KT1G
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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Original
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LM1MA141KT1G
LM1MA142KT1G
70/SOTâ
OT-323/SC-70
3000/Tape
LM1MA141KT3G
10000/Tape
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode M1MA141KT1 M1MA142KT1 This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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Original
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M1MA141KT1
M1MA142KT1
M1MA141/2KT1
inch/3000
M1MA141/2KT3
inch/10
70/SOT
M1MA142KT2
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PDF
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melf diode color
Abstract: glass mini melf diode MELF DIODE color bands LL4148 r20V LL4148 diode galaxy electrical
Text: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4148 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A Mini - MELF Silicon epitaxial diode High speed switching diode 500mW power dissipation MECHANICAL DATA Case:Mini-MELF glass case Polarity:Color band denotes cathode
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Original
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LL4148
1111REVERSE
500mW
melf diode color
glass mini melf diode
MELF DIODE color bands
LL4148
r20V
LL4148 diode galaxy electrical
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PDF
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LL4148 diode galaxy electrical
Abstract: MELF DIODE color bands LL4148 LL4148 melf
Text: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4148 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A Mini - MELF Silicon epitaxial diode High speed switching diode 500mW power dissipation MECHANICAL DATA Case:Mini-MELF glass case Polarity:Color band denotes cathode
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Original
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LL4148
1111REVERSE
500mW
LL4148 diode galaxy electrical
MELF DIODE color bands
LL4148
LL4148 melf
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PDF
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Untitled
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4448 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A MINI-MELF Silicon epitaxial diode High speed switching diode Cathode indification φ1 .5±0.1 500mW power dissipation MECHANICAL DATA Case:MINI-MELF glass case
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Original
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LL4448
1111REVERSE
500mW
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PDF
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Untitled
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4148 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A MINI-MELF Silicon epitaxial diode High speed switching diode Cathode indification φ1 .5±0.1 500mW power dissipation MECHANICAL DATA Case:MINI-MELF glass case
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Original
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LL4148
1111REVERSE
500mW
Ave268010
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PDF
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LL4148
Abstract: DIODE LL4148
Text: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4148 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A MINI-MELF Silicon epitaxial diode High speed switching diode Cathode indification φ1 .5±0.1 500mW power dissipation MECHANICAL DATA Case:MINI-MELF glass case
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Original
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LL4148
1111REVERSE
500mW
LL4148
DIODE LL4148
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PDF
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rf1010
Abstract: MELF DIODE color bands 100HZ 100MHZ LL4148
Text: LL4148 Voltage Range -75 Volts Current -0.15 Ampere SMALL SIGNAL SWITCHING DIODE Features Mini-MELF Silicon epitaxial planar diode High speed switching diode 500mW power dissipation 0.063 1.6 0.055(1.4) Mechanical Data Case: Mini-MELF glass case 0.019(0.48)
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Original
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LL4148
500mW
rf1010
MELF DIODE color bands
100HZ
100MHZ
LL4148
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PDF
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LL4448
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4448 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A MINI-MELF Silicon epitaxial diode High speed switching diode Cathode indification φ1 .5±0.1 500mW power dissipation MECHANICAL DATA Case:MINI-MELF glass case
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Original
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LL4448
1111REVERSE
500mW
LL4448
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PDF
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1N4148 DO-34
Abstract: 100HZ 100MHZ 1N4148
Text: 1N4148 Voltage Range -75 Volts Current -0.15 Ampere SMALL SIGNAL SWITCHING DIODE Features Silicon epitaxial planar diode High speed switching diode 500mW power dissipation These diodes are also available in glass case DO-34,Mini-MELF DO-34 GLASS 1.143 (29.03)
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Original
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1N4148
500mW
DO-34
DO-35
1N4148 DO-34
100HZ
100MHZ
1N4148
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N4148 Voltage Range -75 Volts Current -0.15 Ampere SMALL SIGNAL SWITCHING DIODE Features DO-34 GLASS Silicon epitaxial planar diode High speed switching diode 500mW power dissipation These diodes are also available in glass case DO-34,Mini-MELF 0.079(2.0)
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Original
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1N4148
DO-34
500mW
DO-35
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PDF
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