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    SILICON TRANSISTOR Search Results

    SILICON TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    SILICON TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UP1620 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON POWER TRANSISTOR  DESCRIPTION The UTC UP1620 is a silicon PNP silicon power transistor, it uses UTC’s advanced technology to provide the customers with high collector-emitter breakdown voltage and ultra-high DC current


    Original     		PDF UP1620 UP1620 UP1620L-x-T3P-T UP1620G-x-T3P-T QW-R214-025

    IC 8088

    Abstract: MA4T64535 "Semiconductor Master" thurlby power supply MA4T645 micro X ODS-512 MA4T64500
    Text: Preliminary Specification High Reliability Semiconductor Silicon Bipolar Low Noise Transistor V1.00 ODS 512 Outline Features x x x x ML4T645-S-512 fT to 9 GHz Low Noise Figure Silicon Dioxide and Silicon Dioxide Passivation Space Qualified Description The ML4T645 is a NPN small signal silicon bipolar transistor, well


    Original     		PDF ML4T645-S-512 ML4T645 IC 8088 MA4T64535 "Semiconductor Master" thurlby power supply MA4T645 micro X ODS-512 MA4T64500

    PMBFJ174

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995 NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel


    Original     		PDF PMBFJ174 MAM386 R77/02/8

    PMBFJ174

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995 NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel


    Original     		PDF PMBFJ174 MAM386 R77/02/8

    Untitled

    Abstract: No abstract text available
    Text: 1N1202RA Silicon Rectifier 4.98 Diodes Silicon Rectifiers General-Purpose American M. Page 1 of 1 Enter Your Part # Home Part Number: 1N1202RA Online Store 1N1202RA Diodes Silicon Rectifier Transistors Enter code INTER3 at checkout.* Integrated Circuits


    Original     		PDF 1N1202RA 1N1202RA com/1n1202ra

    BD435

    Abstract: BD441
    Text: BD435, BD437, BD439, BD441 Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications. Features http://onsemi.com 4.0 AMPERES POWER TRANSISTORS NPN SILICON


    Original     		PDF BD435, BD437, BD439, BD441 BD438 BD442 BD435 BD437 BD439 BD435 BD441

    Untitled

    Abstract: No abstract text available
    Text: BD435G, BD437G, BD439G, BD441G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications. Features http://onsemi.com 4.0 AMPERES POWER TRANSISTORS NPN SILICON


    Original     		PDF BD435G, BD437G, BD439G, BD441G BD438 BD442 BD435G BD437G BD439G

    2N4401 transistor

    Abstract: 2N4401 NPN Switching Transistor CMLT4413 2N4401 2N4403 NPN, PNP for 500ma, 30v 2n4401 configuration 2N4403 surface mount
    Text: Central CMLT4413 TM Semiconductor Corp. SURFACE MOUNT COMPLEMENTARY NPN/PNP SILICON TRANSISTOR SOT-563 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT4413 consists of one isolated 2N4401 NPN silicon transistor and one complementary isolated 2N4403 PNP silicon transistor,


    Original     		PDF CMLT4413 OT-563 CMLT4413 2N4401 2N4403 150mA, 2N4401 transistor 2N4401 NPN Switching Transistor NPN, PNP for 500ma, 30v 2n4401 configuration 2N4403 surface mount

    Bft46

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic


    Original     		PDF BFT46 MAM385 R77/02/pp11 Bft46

    MJ3771

    Abstract: MJ3773 MJ6257 MJ6302 MJ6700 MJ6701 ADC 808
    Text: MJ6257 SILICON For Specifications, See MJ3771 Data. MJ6302 (silicon) For Specifications, See M J3773 Data. MJ6700,MJ6701 (SILICON) 7 AMPERE POWER TRANSISTORS PNP SILICON M EDIUM-POW ER PNP SILICON TRANSISTORS . . . designed for switching and wide-band amplifier applications.


    OCR Scan     		PDF MJ6257 MJ3771 MJ6302 MJ3773 MJ6700 MJ6701 MJ6701 MJ6257 MJ6302 ADC 808

    MJE2160

    Abstract: MJE1090 power transistor audio amplifier 500 watts MJE2090 MJE210 MJE2093 MJE2103
    Text: MJE2090 H, MJE2093 SILICON For Specifications, See MJE1090 Data. MJE2100 th r u MJE2103 (SILICON) For Specifications, See MJE 1090 Data. MJE2160 (silicon) PLASTIC MEDIUM-POWER NPN SILICON TRANSISTOR 1.5 AMPERE POWER TRANSISTOR NPN SILICON . . . designed for line operated audio output amplifier applications


    OCR Scan     		PDF MJE2090 MJE2093 MJE1090 MIE2100 MJE2103 MJE2160 SeeAN-415) MJE2160 power transistor audio amplifier 500 watts MJE2090 MJE210 MJE2093 MJE2103

    MPQ2369

    Abstract: MHQ2369 MHQ2906 2N2483 2N2484 MPQ2483 MPQ2484 MPQ2906 MPQ2907
    Text: MPQ2369 SILICON MPQ2483 MPQ2484 For Specifìcations, See MHQ2369 Data. (SILICON) QUAD DUAL IN-LINE NPN SILICON ANNULAR AMPLIFIER TRANSISTORS QUAD DUAL IN-LINE NPN SILICON AMPLIFIER TRANSISTORS . . . designed for low-level, high-gain amplifier applications.


    OCR Scan     		PDF MPQ2369 MHQ2369 MPQ2483 MPQ2484 2N2483 2N2484 O-116 MPQ2483 MPQ2369 MHQ2906 2N2484 MPQ2484 MPQ2906 MPQ2907

    MPS8099

    Abstract: MPS8599 IC 7410 transistor 2sc 973 AN-415 MPS8098 MPS8598
    Text: MPS8098, MPS8099NPN MPS8598, MPS8599PNP SILICON COMPLEMENTARY SILICON ANNULAR AMPLIFIER TRANSISTORS COMPLEMENTARY SILICON AMPLIFIER TRANSISTORS . . . designed for general-purpose amplifier applications for audio circuits. • Collector Emitter Breakdown Voltage —


    OCR Scan     		PDF MPS8098, MPS8099NPN MPS8598, MPS8599PNP MPS8598 MPS8099, MPS8599 MPS8098 MPS8099 MPS8599 IC 7410 transistor 2sc 973 AN-415

    MD7002

    Abstract: RB2K MD7002A MD7002B IB 6407 02k02
    Text: MD7002 silicon MD7002A MD7002B NPN SILICON ANNULAR MULTIPLE TRANSISTORS NPN SILICON MULTIPLE TRANSISTORS . . . designed for use as differential am plifiers, dual general-purpose am plifiers, front end detectors and temperature compensation applications.


    OCR Scan     		PDF MD7002 MD7002A MD7002B 100/uAdc M07CI02A MD7CI02B MD7002B MD7002A MD7002 RB2K IB 6407 02k02

    m0346

    Abstract: BI 342 MD3467 MD3467F MQ3467
    Text: MD3467 MD3467F MQ3467 SILICON MULTIPLE SILICON ANNULAR PNP SILICON TRANSISTORS M ULTIPLE . . . designed for use as differential amplifiers, dual general-purpose amplifiers, and temperature compensation applications. • Collector-Emitter Breakdown Voltage —


    OCR Scan     		PDF MD3467 MD3467F MQ3467 m0346 BI 342 MD3467 MQ3467

    MJE370

    Abstract: MJE3439 JE3440 MJE3370 MJE3440 MJE3371 MJE371 MJE-3439
    Text: MJE3370 SILICON For SpecificationS; See MJE370 Data. ^ U E 3 3 7 1 (SILICON) For Specifications, See MJE371 Data. MJE3439, MJE3440 (SILICON) 0.3 AMPERE NPN SILICO N HIG H-VO LTAG E POWER TRANSISTORS NPN SILICON POWER TRANSISTORS . . . designed for use as video o utput amplifiers in television receivers


    OCR Scan     		PDF MJE3370 MJE370 MJE3371 MJE371 MJE3439, MJE3440 MJE3439 MJE3440 JE3440 MJE3370 MJE3371 MJE-3439

    md8003

    Abstract: md8002 md8001 65407
    Text: MD8001 SILICON MD8002 MD8003 NPN SILICON MULTIPLE TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, front-end detectors and tem perature compensation ap­ plications. •


    OCR Scan     		PDF MD8001 MD8002 MD8003 MD8001 MD8003 65407

    MMCM2907

    Abstract: MMCM3798 MMCM3799 MMCM3903 MMCM3904 MMT2907 MMT3798 MMT3903
    Text: MMCM2907 SILICON MICRO-T PNP SILICON SWITCHING AND AMPLIFIER TRANSISTORS PNP SILICON ANNULAR TRANSISTORS . . . designed for general-purpose switching and am plifier applications, where high-density packaging is required. Space Saving Micro-Miniature Packages


    OCR Scan     		PDF MMCM2907 MMT2907 MMCM2907 MMCM3798, MMCM3799 MMT3798 MMCM3903, MMCM3904 MMT3903 MMCM3798 MMCM3799 MMCM3903 MMCM3904

    transistor 835

    Abstract: Amplifier with transistor BC548 TRANSISTOR regulator AUDIO Amplifier with transistor BC548 transistor 81 110 w 85 transistor 81 110 w 63 transistor transistor 438 TRANSISTOR GUIDE transistor 649
    Text: Philips Semiconductors Alphanumeric index Selection guide PAGE BC327; BC327A; BC328 Silicon planar epitaxial transistor 58 BC337; BC337A; BC338 Silicon planar epitaxial transistor 59 BC546; BC547; BC548 Silicon planar epitaxial transistor 60 BC556; BC557; BC558


    OCR Scan     		PDF BC327; BC327A; BC328 BC337; BC337A; BC338 BC546; BC547; BC548 BC556; transistor 835 Amplifier with transistor BC548 TRANSISTOR regulator AUDIO Amplifier with transistor BC548 transistor 81 110 w 85 transistor 81 110 w 63 transistor transistor 438 TRANSISTOR GUIDE transistor 649

    ZPD 5.1 ITT

    Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
    Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers


    OCR Scan     		PDF F-92223 D-7800 ZPD 5.1 ITT ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode

    MJE130

    Abstract: mje135 MJE230 MJE220 MJE221 MJE222 MJE225 MJE231 MJE235 200 watts audio amp power transistors pnp
    Text: MJE220 thru MJE225 NPN SILICON MJE230 thru MJE235 PNP COMPLEMENTARY PLASTIC SILICON POWER TRANSISTORS 4 AMPERE POWER TRANSISTORS . . . designed for low power audio amplifier and low current, high­ speed switching applications. • COMPLEMENTARY SILICON


    OCR Scan     		PDF MJE220 MJE225 MJE230 MJE235 MJE220/MJE222 MJE230/MJE232 MJE223/MJE225 MJE233/MJE235 MJE221 MJE222 MJE130 mje135 MJE231 200 watts audio amp power transistors pnp

    MMT72

    Abstract: No abstract text available
    Text: MMT72 SILICON NPN SILICON ANNULAR MICRO-MINIATURE NPN SILICON SWITCHING TRANSISTOR TRANSISTOR . . . designed fo r high-speed, low-current switching applications where higtvdensity packaging is required. • Ideal for Thick Film Digital C ircuit Applications


    OCR Scan     		PDF MMT72 10mAdc, 10Vdc MMT72

    m0325

    Abstract: M-0325 MD3250 MD3250F MD3251 MD3251F MQ3251 MQ3261
    Text: MD3250, A, F, AF SILICON MD3251, A, F, AF MQ3251 MULTIPLE SILICON ANNULAR TRANSISTORS PNP SILICON MULTIPLE TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, front end detectors and temperature compensation applications.


    OCR Scan     		PDF MD3250, MD3251, MQ3251 50mAdc MD3251 MD3250' m0325 M-0325 MD3250 MD3250F MD3251 MD3251F MQ3251 MQ3261

    MD918

    Abstract: MD918A K 1170 MD918F MD918B MD918BF
    Text: MD918, A, B silicon MD918F, AF, BF NPN SILICON MULTIPLE SILICON ANNULAR TRANSISTORS MULTIPLE TRANSISTORS . . . designed fo r use as d ifferential amplifiers, dual high frequency amplifiers, fro n t end detectors and temperature compensation applications.


    OCR Scan     		PDF MD918, MD918F, MD918 MD918F MD918A K 1170 MD918B MD918BF