1Mx9 DRAM 30-pin SIMM
Abstract: msc diode 30-pin simm memory dynamic pin diagram of ic TAA 762 30 pin SIP dram memory MSC DO SIMM 30-pin 1Mx4 SIMM 1Mx9 MSC DRAM
Text: DRAM - MODULE 1.02.01.02 Fast Page Mode 1 Mega Byte MSC 991100J3NS 1Mx9 DRAM SIMM, 1K Byte Refresh, 5.0V GENERAL DESCRIPTION The MSC 991100J3NS is a 1Mx9bits Dynamic RAM high density memory module. The MSC 991100J3NS consists of two CMOS 1Mx4bits DRAMs and one CMOS 1Mx1bit in
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991100J3NS
991100J3NS
20-pin
30-pin
220nF
1Mx9 DRAM 30-pin SIMM
msc diode
30-pin simm memory dynamic
pin diagram of ic TAA 762
30 pin SIP dram memory
MSC DO
SIMM 30-pin
1Mx4
SIMM 1Mx9
MSC DRAM
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Untitled
Abstract: No abstract text available
Text: SMART SM5331000 Modular Technologies February 12, 1997 4MByte 1M x 33 DRAM Module - 1Mx4 based 72-pin SIMM Features • • • • • • • • • • • Standard : JEDEC Configuration : Parity Access Time : 60/70/80ns Operation Mode : FPM Operating Voltage :
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SM5331000
72-pin
60/70/80ns
300mil
AMP-7-382486-2
AMP-822019-4
AMP-822110-3
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MCM91430
Abstract: Motorola CMOS Dynamic RAM 1M Motorola CMOS Dynamic RAM 1M x 1 1mx1 DRAM DIP MCM511000A mcm511000 1K x4 static ram application note Motorola CMOS Dynamic RAM 16m x 32 TSOP 400 86 MCM69F536B
Text: Memory Products In Brief . . . Motorola’s memory product portfolio has been expanded to support a broad range of engineering applications. Included in this portfolio are asynchronous devices with access times of 6 ns at 256K–bit density, 6 ns at 5 V 1
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stan00C
1Mx16
MCM4L4400B
MCM5L4100A
MCM54100A
256Kx16
512Kx8
MCM5L4100A
MCM54100A
MCM91430
Motorola CMOS Dynamic RAM 1M
Motorola CMOS Dynamic RAM 1M x 1
1mx1 DRAM DIP
MCM511000A
mcm511000
1K x4 static ram application note
Motorola CMOS Dynamic RAM 16m x 32
TSOP 400 86
MCM69F536B
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Untitled
Abstract: No abstract text available
Text: 1Mx9/512Kx18/256Kx36, 20 - 45ns, ZIP 30A104-10 A 9 Megabit CMOS SRAM DPS256S36LK PRELIMINARY DESCRIPTION: The DPS256S36LK is a 256K X 36 high-density, low-power static RAM module comprised of eight 128Kx8 and four 256Kx4 monolithic SRAM’s, an advanced high-speed CMOS decoder, resistor network
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1Mx9/512Kx18/256Kx36,
30A104-10
DPS256S36LK
DPS256S36LK
128Kx8
256Kx4
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SIMM 1Mx9
Abstract: No abstract text available
Text: SMART SM5360140U1P3UU Modular Technologies October 26, 1999 Revision History • October 26, 1999 Datasheet released. Corporate Headquarters: 4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: [email protected]
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SM5360140U1P3UU
72-pin
SM532014001P3UU
SM532N
SIMM 1Mx9
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Untitled
Abstract: No abstract text available
Text: SM5361000 July 1995 Rev 3 SMART Modular Technologies SM5361000 4MByte 1M x 36 CMOS DRAM Module - Low Profile General Description Features The SM5361000 is a high performance, 4-megabyte dynamic RAM module organized as 1M words by 36 bits, in a 72-pin, leadless single-in-line memory module
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SM5361000
72-pin,
60/70/80ns
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SH-1S
Abstract: HM511000 Microprocessor sram dram 74F245 A0-A21 tCYC-30ns Hitachi DSA0071
Text: Hitachi Europe Ltd. ISSUE : app064/1.0 APPLICATION NOTE DATE : 06/12/97 Interfacing High Speed SRAM/DRAM to the SH-1 Embedded Controller Introduction Memory Interfacing is a very important aspect of microprocessor based system design. Unfortunately, careful
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app064/1
SH-1S
HM511000
Microprocessor sram dram
74F245
A0-A21
tCYC-30ns
Hitachi DSA0071
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27C101
Abstract: 27 eprom programmer schematic 511000 dram interfacing sram and dram 511000 A0-A21 HM511000 SH7032 Hitachi DSA00197 hitachi sh3 1995
Text: Hitachi Europe Ltd. ISSUE : APPS/64/1.0 APPLICATION NOTE DATE : 06/12/97 Interfacing High Speed SRAM/DRAM to the SH-1 Embedded Controller Introduction Memory Interfacing is a very important aspect of microprocessor based system design. Unfortunately, careful
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APPS/64/1
27C101
27 eprom programmer schematic
511000 dram
interfacing sram and dram
511000
A0-A21
HM511000
SH7032
Hitachi DSA00197
hitachi sh3 1995
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1Mx9 DRAM 30-pin SIMM
Abstract: KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 1mx33 4m dram 72-pin simm 32 DRAM 30-pin SIMM
Text: 2. Product Guide Org. Part No. Feature Speed ns Package PCB Height Refresh cycle/ms C/S 650 1024/16 NOW DRAM SIMM Based on 4M DRAM 1Mx8 KMM581000CN 1Mx9 4Mx8 4Mx9 F/P 60/70/80 S, 30 Pin SIMM KMM591000CN F/P 60/70/80 S, 30 Pin SIMM 650 1024/16 NOW KMM584000C
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1Mx32
1Mx33
1Mx36
1Mx40
2Mx32
2Mx36
1Mx9 DRAM 30-pin SIMM
KMM594000C
30 pin simm
8mx32 simm 72 pin
4Mx9 DRAM 30-pin SIMM
4MX39
4m dram 72-pin simm 32
DRAM 30-pin SIMM
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1Mx9 DRAM 30-pin SIMM
Abstract: KMM591000CN dram simm memory module samsung 30-pin 44C1000CJ KMM591000
Text: DRAM MODULE 1 Mega Byte KMM591OOOCN Fast Page Mode 1Mx9 DRAM SIMM , 1K Refresh , 5V GENERAL DESCRIPTION FEATURES The Samsung KMM591 OOOCN is a 1M bit x 9 Dynamic RAM high density memory module. The Samsung KMM591 OOOCN consists of two CMOS • Performance Range:
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KMM591OOOCN
KMM591
20-pin
30-pin
KMM591000CN
1Mx9 DRAM 30-pin SIMM
dram simm memory module samsung 30-pin
44C1000CJ
KMM591000
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KMM591000BN-6
Abstract: kmm591000bn7 KMM591000BN6 KMM591000BN8 1Mx9 DRAM 30-pin SIMM KM44C1000BJ KMM591000BN KMM591000B
Text: KMM591000BN DRAM MODULES 1MX9 DRAM SIMM Memory Module GENERAL DESCRIPTION FEATURES • Performance range: tu e tcAc I rc KMM591000BN-6 60ns 15ns 110ns KMM591000BN-7 70ns 20 ns 130ns KMM591000BN-8 80ns 20 ns 150ns The KMM591000BN is a Single In-line Memory Module
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KMM591000BN
KMM591000BN-6
KMM591000BN-7
KMM591000BN-8
110ns
130ns
150ns
KMM591000BN
KM44C1000BJ
kmm591000bn7
KMM591000BN6
KMM591000BN8
1Mx9 DRAM 30-pin SIMM
KMM591000B
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GMM732411
Abstract: GMM7362000 GMM732411OCNS OMM781000CNS
Text: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns ÎMB 4MB 60ns 70ns j !Mx8 OMM781000CNS-6 GMM781OOOCNS-7 1Mx9 GMM791000CNS-6 GMM79I OOOCNS-7 4Mx8 GMM784000CS-6 [ GMM784000CS-7 4Mx9 GMM794000CS-6 — I GMM794000CS-7 1MX32 GMM7321OOOCS/SG-6 GMM7321000CS/SG-7 GMM7321010CS/SG-6
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OMM781000CNS-6
GMM791000CNS-6
GMM784000CS-6
GMM794000CS-6
GMM781OOOCNS-7
GMM79I
GMM784000CS-7
GMM794000CS-7
1MX32
GMM7321OOOCS/SG-6
GMM732411
GMM7362000
GMM732411OCNS
OMM781000CNS
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Untitled
Abstract: No abstract text available
Text: SAJ1SUNG ELECTRONICS INC b7E ]> • V^bNlMS DOISOTI bTb ■ S flG K KMM591020BN DRAM MODULES 1Mx9 DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591020BN. is a 1M b itsx9 Dynamic RAM high density memory module. The Samsung KMM591020BN
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KMM591020BN
KMM591020BN.
KM44C1000BLJ-1Mx4)
20-pin
KM41C1000CLJ1Mx1)
30-pin
22/xF
KMM591020BN-6
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MCM91000
Abstract: motorola mcm91000s
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91000 MCM9L1000 1Mx9 Bit Dynamic Random Access Memory Module The MCM 91000 and MCM9L1000 are 9M dynam ic random access memory DRAM modules organized as 1,048,576 x 9 bits. The modules are 30-lead single-in-line memory m odules (SIMM) or 30-pin single-in-line packages (SIP)
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MCM9L1000
30-lead
30-pin
CM511000A
MCM511000A
9L1000
MCM91000AS70
MCM91000AS00
M91000AS
MCM9L1000AS70
MCM91000
motorola mcm91000s
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D10CK
Abstract: SM5362000
Text: M - ¿* m, í SM5362000H-7 8MByte 2M x 36 CMOS DRAM Module General Description Features The SM 5362000H-7 is a high performance, 8-megabyte dynamic RAM module organized as 2M words by 36 bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package.
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SM5362000H-7
5362000H-7
72-pin,
D10CK
SM5362000
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m7401
Abstract: 1MX1 GMM732211OCMS M7641 GMM7324100cns 83CT 128MB 72-pin SIMM dram 72-pin simm 128mb
Text: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns 1MB 4MB 60ns 70ns 1M x8 1GMM781000CNS-6 — | GMM781000CNS-7 1M x9 GMM791GOOCNS-6 J — I GMM791000CNS-7 4Mx8 GMM784000CS-6 4Mx9 GMM794000CS-6 1M x 32 H H GMM784000CS-7 GMM794000CS-7 I GMM7321OOOCS/SG-6 } I GMM732101OCS/SG-6
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1GMM781000CNS-6
GMM791GOOCNS-6
GMM784000CS-6
GMM794000CS-6
GMM781000CNS-7
GMM791000CNS-7
GMM784000CS-7
GMM794000CS-7
GMM7321OOOCS/SG-6
GMM732101OCS/SG-6
m7401
1MX1
GMM732211OCMS
M7641
GMM7324100cns
83CT
128MB 72-pin SIMM
dram 72-pin simm 128mb
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1Mx9 DRAM 30-pin SIMM
Abstract: j353 msc module odq1 MSC CAPACITOR MSC R631T-1 dram module DRAM 30-pin SIMM Module/DS-70
Text: ¿0% - iu.^0 1.02.01.02 DRAM - MODULE M IC R O C O M P U T E R S • S Y S T E M S * C O M P O N E N T S V E R T R IE B S G M B H Fast Page Mode 1 Mega Byte MSC 991100J3NS 1Mx9 DRAM SIMM, 1K Byte Refresh, 5.0V GENERAL DESCRIPTION The M SC 991100J3N S is a lM x9bits Dynamic RAM high
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991100J3NS
20-pin
30-pin
220nF
991100J3NS-6
991100J3NS-7
1Mx9 DRAM 30-pin SIMM
j353
msc module
odq1
MSC CAPACITOR
MSC R631T-1
dram module
DRAM 30-pin SIMM
Module/DS-70
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SIMM 1Mx9 30pin
Abstract: simm EDO 72pin KMM51442100ATG KMM532
Text: I. DRAM MODULE Product Guide Org. Part No. Feature Access Time ns Package Height s.single/didouble (mil) Refresh (cycle/ms) CIS 1024/16 1024/120 1024/16 1024/120 1024/16 1024/16 1024/16 1024/16 now now now now now now now now 1024/16 1024/16 1024/16 1024/16
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1Mx32
1Mx33
1Mx36
KMM581000CN
KMM5B1020CN
KMM591000CN
KMM591020CN
KMM5321000CV/CVG
KMM5331000C/CG
KMM5361000C2/C2G
SIMM 1Mx9 30pin
simm EDO 72pin
KMM51442100ATG
KMM532
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KMCJ532512
Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7
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KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
KM44C256C-6
KM44C256CL-6
KM44C256CSL-6
KM41C4000C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000C-8
KMCJ532512
KM23C1000-20
KM28C64B
KMM594
KM718B90-12
zip 40pin
30-pin simm memory "16m x 8"
KM41C4000C-6
KM41C16000ALL
KM48V2104AL
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256KX8 SIMM
Abstract: 512kx8 dram simm dram zip 256kx16 1mx8 DPS 119 61 sram 256kx8
Text: TABLE OF CONTENTS GENERAL PRODUCT INFORMATION Reference by S iz e . 4 Dense-Pac Microsystems Modules and M onolithics. 5
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250ns,
1Mx8/512Kx16/256Kx32,
150-250ns,
DPZ128X32VT/DPZ128X32VTP
Z256S32IW
512Kx8/256Kx16/128Kx32,
120-250ns,
256KX8 SIMM
512kx8 dram simm
dram zip 256kx16
1mx8
DPS 119
61 sram 256kx8
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MCM91430
Abstract: 1Mx9 DRAM 30-pin SIMM 91430 MCM91430S
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91430 MCM9L1430 Advance Information 1Mx9 Bit Dynamic Random A ccess Memory Module The MCM91430 and MCM9L1430 are 9M dynamic random access memory DRAM modules organized as 1,048,576 x 9 bits. The modules are 30-lead
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MCM91430
MCM9L1430
30-lead
MCM54400AN
MCM511000A
MCM9L1430
9L1430
-MCM91430S70
1Mx9 DRAM 30-pin SIMM
91430
MCM91430S
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Untitled
Abstract: No abstract text available
Text: 9 Megabit CMOS SRAM DPS256S36L M ICRO SYSTEM S PRELIMINARY DESCRIPTION: The DPS256S36L is a 256K X 36 high-density, Iow-power static RAM module comprised of eight 128K X 9 monolithic SRAM's, an advanced high-speed CMOS decoder, resistor network and decoupling capacitors
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DPS256S36L
DPS256S36L
512Kx
256Kx36
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mcm2018a
Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
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A16685-7
EMTR1147
mcm2018a
sun hold RAS 0610
cqq 765 RT
IC HX 710B
U256D
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sun hold RAS 0610
Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
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A16685-7
EMTR1147
sun hold RAS 0610
oki Logic
Motorola transistor 7144
MSC2304
M5M41000
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