FET P-Channel Switch
Abstract: IRF7104 X40421 AN164 IRF7504 IRF7756 X40420
Text: CPU Supervisor and System Management Devices for Battery Applications: Using the X40420, X40421 as a Battery Backup Switch Application Note July 15, 2005 AN164.0 Author: Carlos Martinez Introduction The X40420, X40421 devices have a Power On Reset POR
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X40420,
X40421
AN164
FET P-Channel Switch
IRF7104
IRF7504
IRF7756
X40420
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IH401A
Abstract: jfet transistor 2n4391 4dr25 2N4391 IH6201 jfet idss 10 ma vp -3
Text: IH401A Semiconductor T UCT ROD ACEMEN 47 P E 7 T L 7 E P 42 OL RE 00-4 m OBS ENDED 8 1 s.co MM ions ECO pplicat p@harri R O A N ral ntap Cent : ce Call or email April 1999 QUAD Varafet Analog Switch Features Description • rDS ON (Typ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35Ω
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IH401A
IH401A
2N4391,
IH6201
jfet transistor 2n4391
4dr25
2N4391
IH6201
jfet idss 10 ma vp -3
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Untitled
Abstract: No abstract text available
Text: S E M I C O N D U C T O R IH401A S IGN ES WD E RN FO DED EN OMM EC OT R October 1997 QUAD Varafet Analog Switch N Features Description • rDS ON (Typ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35Ω The IH401A is made up of 4 monolithically constructed
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IH401A
1-800-4-HARRIS
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AN1481
Abstract: EL8103 X9317 X9317ZS8Z
Text: Application Note 1481 Author: Dave Laing Using DCP for Video Gain and Cable Compensation There are times when video gain control is needed. DCP’s are often overlooked for this application as they are thought to have too low a bandwidth for video applications. Yet, by
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X9317
AN1481
EL8103
X9317ZS8Z
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REJ03G1782-0401
Abstract: No abstract text available
Text: Target Specification Datasheet R2J20702NP Peak Current Mode Synchronous Buck Controller with Power MOS FETs REJ03G1782-0401 Rev.4.01 Jun 17, 2010 Description This all-in-one SiP for POL point-of-load applications is a multi-chip module incorporating a high-side MOS FET,
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R2J20702NP
REJ03G1782-0401
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Untitled
Abstract: No abstract text available
Text: Target Specification Datasheet R2J20702NP Peak Current Mode Synchronous Buck Controller with Power MOS FETs REJ03G1782-0401 Rev.4.01 Jun 17, 2010 Description This all-in-one SiP for POL point-of-load applications is a multi-chip module incorporating a high-side MOS FET,
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R2J20702NP
REJ03G1782-0401
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schematic adsl modem board
Abstract: generator voltage pwm schematic buck converter various PWM techniques EL7566 47 uf capacitor schematic circuit adsl modem board sepic converter 550khz AN1209 EL7532 ISL6410
Text: Intersil Integrated FET DC/DC Converters Application Note February 23, 2006 AN1209.0 Author: Alan Rich Table of Contents Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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AN1209
schematic adsl modem board
generator voltage pwm schematic buck converter
various PWM techniques
EL7566
47 uf capacitor
schematic circuit adsl modem board
sepic converter 550khz
EL7532
ISL6410
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EG1213
Abstract: farnell spdt toggle switch TPS2390 TPS2390DGK TPS2391 TPS2391DGK Closest VISHAY 100SP1 219-05M
Text: User’s Guide TPS2390EVM/TPS2391EVM Evaluation Modules for Simple -48ĆV Hot Swap Controllers User’s Guide 1 EVM IMPORTANT NOTICE Texas Instruments TI provides the enclosed product(s) under the following conditions: This evaluation kit being sold by TI is intended for use for ENGINEERING DEVELOPMENT OR EVALUATION
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TPS2390EVM/TPS2391EVM
EG1213
farnell spdt toggle switch
TPS2390
TPS2390DGK
TPS2391
TPS2391DGK
Closest VISHAY
100SP1
219-05M
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Q1/2N3055 RCA
Abstract: No abstract text available
Text: Chapter 9 Using Analog CMOS Arrays to Create Current Sources 9.1 RCA pioneered CMOS Once the first stable MOSFETs had been created in the early 1960s by RCA researchers Steve Hofstein and Fred Heiman, and by Dr. Frank Wanlass at Fairchild Semiconductor, it opened the door to researching and developing other types of MOS
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20VTH.
ALD110802
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jfet idss 10ma vp -4v
Abstract: 22-VPP IH401A
Text: IH401A QUAD Varafet Analog Switch Features Description • rDS ON (Ty P ) . 35i2 The IH401A is made up of 4 monolithically constructed combinations of varacitor type diode and a N-Channel JFET.
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IH401A
IH401A
2N4391,
IH6201
IH6201
jfet idss 10ma vp -4v
22-VPP
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Untitled
Abstract: No abstract text available
Text: IH401A HARRIS S E M I C O N D U C T O R QUAD Varafet Analog Switch October 1997 Features Description • rDS ON (Ty P ) . 35i2 The IH401A is made up of 4 monolithically constructed combinations of varacitor type diode and a N-Channel JFET.
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IH401A
IH401A
2N4391,
1-800-4-HARRIS
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P-Channel Depletion Mode FET
Abstract: P-Channel Depletion-Mode FET E202 2N3631 2N3823 Junction FETs JFETs 2N2606 2N3329 E202 P-Channel Depletion Mosfets
Text: AN73-7 s S ilic o n ix APPLICATION NOTE An Introduction to FETs INTRODUCTION In fact, FET technology today allows a greater packaging density in large-scale integrated circuits LSI than would ever be possible w ith bipolar devices. The basic principle o f the field-effect transistor (F E T ) has
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MRF151G
Abstract: BH Rf transistor mrf151g 300 MRF151G hf amplifier
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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16dBTyp)
MRF151G
BH Rf transistor
mrf151g 300
MRF151G hf amplifier
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application MOSFET transmitters fm
Abstract: TOROIDS Design Considerations mrf141g
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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choke vk200
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET . . . designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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MRF141
choke vk200
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301AT
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF151 The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode MOSFET . . . designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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MRF151
22dBTyp)
MRF151
301AT
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RF MOSFET CLASS AB
Abstract: AN211-A motorola bipolar transistor data manual
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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MRF151G
Abstract: MRF151G hf amplifier testing of mosfet gain control rf amplifier circuit mrf151g RF TOROIDS Design Considerations
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF151G The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET . . . designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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MRF151G
MRF151G
MRF151G hf amplifier
testing of mosfet gain control
rf amplifier circuit mrf151g
RF TOROIDS Design Considerations
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arco 406
Abstract: mrf141g transistor fet N-Channel RF Amplifier RF TOROIDS Design Considerations
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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MRF141G
MRF141G
arco 406
transistor fet N-Channel RF Amplifier
RF TOROIDS Design Considerations
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MRF151G
Abstract: application MOSFET transmitters fm rf amplifier circuit mrf151g MRF151G hf amplifier
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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Untitled
Abstract: No abstract text available
Text: HIP5015, HIP5016 Semiconductor 7V, 7A SynchroFET Complementary Drive Synchronous Half-Bridge Features Description • Complementary Drive, Half-Bridge Power NMOS Designed with the Pentium™ in mind, the Harris Synchro FET™ family provides a new approach for implementing a syn
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HIP5015,
HIP5016
HIP5016
HIP5015)
HIP5016)
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J115 mosfet
Abstract: MRF175LU
Text: MOTOROLA SEM ICO NDU CTO R TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect T ransistors MRF175LU M RF175LV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and
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MRF175LU
MRF175LV
28cal
MRF175L
MRF175LU
MRF175LV
J115 mosfet
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VK200 inductor of high frequencies
Abstract: VK200 INDUCTOR
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F175LV M R F175LU The RF MOSFET Line RF P o w er F ie ld -E ffe ct Transistors N-Channel Enhancement-Mode 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER FETs . . . designed for broadband commercial and military appli cations using single
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MRF175LV
MRF175LU
MRF175L
MRF175LV
MRF175LU
VK200 inductor of high frequencies
VK200 INDUCTOR
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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14-CHANNEL
MRF141
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