SIR882ADP Search Results

SIR882ADP Price and Stock

Filter by Manufacturer


Vishay Siliconix SIR882ADP-T1-GE3 MOSFET N-CH 100V 60A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIR882ADP-T1-GE3	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $1.0125	Buy Now
Vishay Intertechnologies SIR882ADP-T1-GE3 N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SIR882ADP-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIR882ADP-T1-GE3	Reel	3,000	27 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.99631	Buy Now
	SIR882ADP-T1-GE3	Ammo Pack		18 Weeks, 3 Days	1	1 $2.41 10 $1.97 100 $1.6 1000 $1.6 10000 $1.6	Buy Now
Mouser Electronics	SIR882ADP-T1-GE3		14,985			1 $2.86 10 $1.94 100 $1.42 1000 $1.1 10000 $1.01	Buy Now
Newark	SIR882ADP-T1-GE3	Cut Tape	20,988		1	1 $2.41 10 $1.97 100 $1.6 1000 $1.54 10000 $1.54	Buy Now
	SIR882ADP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $1.04	Buy Now
TTI	SIR882ADP-T1-GE3	Reel	18,000		3,000	1 - 10 - 100 - 1000 - 10000 $1.05	Buy Now
	SIR882ADP-T1-GE3	Cut Tape	2,230		10	1 - 10 $1.67 100 $1.67 1000 $1.67 10000 $1.67	Buy Now
TME	SIR882ADP-T1-GE3				1	1 $2.24 10 $1.86 100 $1.42 1000 $1.21 10000 $1.21	Get Quote

Avnet Asia	SIR882ADP-T1-GE3			28 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SIR882ADP-T1-GE3			27 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Huntington SIR882ADP-T1-GE3 MOSFET N-CH 100V 60A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	SIR882ADP-T1-GE3		55,030			1 - 10 - 100 $1.9787 1000 $1.6961 10000 $1.6961	Buy Now

SIR882ADP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIR882ADP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 60A POWERPAK		Original	PDF

SIR882ADP Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
sir882a Abstract: No abstract text available Text: SPICE Device Model SiR882ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	SiR882ADP 11-Mar-11 sir882a
Untitled Abstract: No abstract text available Text: SPICE Device Model SiR882ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	SiR882ADP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC	Original	PDF	SiR882ADP 2002/95/EC SiR882ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
SiR882ADP Abstract: No abstract text available Text: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC	Original	PDF	SiR882ADP 2002/95/EC SiR882ADP-T1-GE3 11-Mar-11
SiR882ADP Abstract: MV 1662 Text: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC	Original	PDF	SiR882ADP 2002/95/EC SiR882ADP-T1-GE3 11-Mar-11 MV 1662
Untitled Abstract: No abstract text available Text: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 VDS (V) 100 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC	Original	PDF	SiR882ADP 2002/95/EC SiR882ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC	Original	PDF	SiR882ADP 2002/95/EC SiR882ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC	Original	PDF	SiR882ADP 2002/95/EC SiR882ADP-T1-GE3 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12
sir882adp Abstract: No abstract text available Text: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC	Original	PDF	SiR882ADP 2002/95/EC SiR882ADP-T1-GE3 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12
so8 footprint Abstract: SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419 Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs KEY BENEFITS • New next-generation technology provides very low on-resistance and ultra-low figure of merit	Original	PDF	SC-70 SC-75 Si7252DP VMN-PT0261-1209 so8 footprint SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419
Untitled Abstract: No abstract text available Text: designfeature SANJAY HAVANUR, Senior Manager, System Applications Vishay Siliconix, Santa Clara, CA Optimum Dead Time Selection in ZVS Topologies Insufficient dead time during turn off can result in the loss of ZVS, poor efficiency, and in the worst case, failure of the	Original	PDF	SIR882ADP
Untitled Abstract: No abstract text available Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit	Original	PDF	SC-75 SiB456DK Si7252DP SiS990DN Si4590DY 1212-8S VMN-PT0261-1402
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Untitled Abstract: No abstract text available Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN845 Matching System Dead Time to MOSFET Parameters in ZVS Circuits by Sanjay Havanur Medium- and high-voltage power MOSFETs are used in a variety of isolated converter topologies, such as half- or full-bridges	Original	PDF	AN845 06-Oct-14