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    SIRA04DP Price and Stock

    Vishay Siliconix SIRA04DP-T1-GE3

    MOSFET N-CH 30V 40A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIRA04DP-T1-GE3 Cut Tape 3,887 1
    • 1 $1.86
    • 10 $1.184
    • 100 $1.86
    • 1000 $0.57705
    • 10000 $0.57705
    		Buy Now
    SIRA04DP-T1-GE3 Digi-Reel 3,887 1
    • 1 $1.86
    • 10 $1.184
    • 100 $1.86
    • 1000 $0.57705
    • 10000 $0.57705
    		Buy Now
    SIRA04DP-T1-GE3 Reel 3,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.50927
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    RS SIRA04DP-T1-GE3 Bulk 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.21
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    New Advantage Corporation SIRA04DP-T1-GE3 3,000 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.5788
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    Vishay Intertechnologies SIRA04DP-T1-GE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIRA04DP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIRA04DP-T1-GE3 Reel 21 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.46741
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    Mouser Electronics SIRA04DP-T1-GE3 11,764
    • 1 $1.48
    • 10 $1.01
    • 100 $0.703
    • 1000 $0.544
    • 10000 $0.475
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    Verical SIRA04DP-T1-GE3 3,000 3,000
    • 1 -
    • 10 -
    • 100 -
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    • 10000 $0.7436
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    Bristol Electronics SIRA04DP-T1-GE3 962
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    Quest Components SIRA04DP-T1-GE3 769
    • 1 $1.86
    • 10 $1.86
    • 100 $0.93
    • 1000 $0.744
    • 10000 $0.744
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    TTI SIRA04DP-T1-GE3 Reel 9,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.444
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    TME SIRA04DP-T1-GE3 1
    • 1 $1.169
    • 10 $0.958
    • 100 $0.737
    • 1000 $0.599
    • 10000 $0.599
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    Avnet Asia SIRA04DP-T1-GE3 14 Weeks 3,000
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    Component Electronics, Inc SIRA04DP-T1-GE3 920
    • 1 $3.85
    • 10 $3.85
    • 100 $2.88
    • 1000 $2.5
    • 10000 $2.5
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    EBV Elektronik SIRA04DP-T1-GE3 13 Weeks 3,000
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    Vishay Intertechnologies SIRA04DPT1GE3

    N-CHANNEL 30 V (D-S) MOSFET Power Field-Effect Transistor, 40A I(D), 30V, 0.00215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SIRA04DPT1GE3 3,000
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    SIRA04DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIRA04DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A POWERPAK Original PDF

    SIRA04DP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		PDF SiRA04DP 2002/95/EC SiRA04DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		PDF SiRA04DP SiRA04DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		PDF SiRA04DP SiRA04DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiRA04DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiRA04DP AN609, 7147m 0050m 0965m 3956m 4955u 6446m 2761m 8394n

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiRA04DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiRA04DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		PDF SiRA04DP 2002/95/EC SiRA04DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		PDF SiRA04DP 2002/95/EC SiRA04DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		PDF SiRA04DP SiRA04DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		PDF SiRA04DP SiRA04DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    62510

    Abstract: SIRA04DP
    Text: SPICE Device Model SiRA04DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiRA04DP 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 62510

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		PDF SiRA04DP SiRA04DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Computer Portable Computers One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Computer Portable Computers Notebooks 4 Ultrabooks 5 Tablet PCs 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay


    Original     		PDF LLP2510 LLP2510-10L VMN-MS6761-1212

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:


    Original     		PDF SiZ916DT SiZ340DT SiZ914DT VMN-PT0306-1402

    PowerPAK 1212-8

    Abstract: mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip
    Text: 2005-2012:QuarkCatalogTempNew 9/20/12 4:25 PM Page 2005 25 Rectifiers, MOSFETs and Optocouplers RoHS ᭤ Innovative Products That Represent a Cross Section of Vishays Very Broad Portfolio ᭤ Products Selected for Their Versatility in Several Key Applications


    Original     		PDF VT1045BP-M3/4W VBT1045BP-E3/4W VFT1045BP-M3/4W VT2045BP-M3/4W VBT2045BP-E3/4W VFT2045BP-M3/4W VT3045BP-M3/4W VBT3045BP-E3/4W VFT3045BP-M3/4W VT4045BP-M3/4W PowerPAK 1212-8 mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip

    POWERPAK SO8

    Abstract: SIS32
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Ultra-Low RDS on with Next Generation Technology AND TEC I INNOVAT O L OGY TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V


    Original     		PDF SiZ916DT VMN-PT0306-1209 POWERPAK SO8 SIS32

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Computer Portable Computers One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Computer ポータブルコンピューター ノートブック 4 ウルトラブック 5


    Original     		PDF LLP2510 LLP2510-10L VMN-MS6792-1304-COPC

    N-Channel MOSFETs

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


    Original     		PDF SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs