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    SIRA36DP Price and Stock

    Vishay Siliconix SIRA36DP-T1-GE3

    MOSFET N-CH 30V 40A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIRA36DP-T1-GE3 Digi-Reel 2,924 1
    • 1 $2.04
    • 10 $1.3
    • 100 $2.04
    • 1000 $0.64084
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    SIRA36DP-T1-GE3 Cut Tape 2,924 1
    • 1 $2.04
    • 10 $1.3
    • 100 $2.04
    • 1000 $0.64084
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    SIRA36DP-T1-GE3 Reel 3,000
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    Vishay Intertechnologies SIRA36DP-T1-GE3

    Trans MOSFET N-CH 30V 28.5A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIRA36DP-T1-GE3)
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    Avnet Americas SIRA36DP-T1-GE3 Reel 21 Weeks 3,000
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    • 10000 $0.52977
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    Bristol Electronics SIRA36DP-T1-GE3 1,190
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    Quest Components SIRA36DP-T1-GE3 952
    • 1 $2.156
    • 10 $2.156
    • 100 $2.156
    • 1000 $0.7546
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    TTI SIRA36DP-T1-GE3 Reel 3,000
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    TME SIRA36DP-T1-GE3 1
    • 1 $0.749
    • 10 $0.462
    • 100 $0.368
    • 1000 $0.331
    • 10000 $0.331
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    EBV Elektronik SIRA36DP-T1-GE3 21 Weeks 3,000
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    SIRA36DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIRA36DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A SO-8 Original PDF

    SIRA36DP Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiRA36DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF SiRA36DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiRA36DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0028 at VGS = 10 V 40 0.0042 at VGS = 4.5 V 40 Qg (Typ.) 17.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8 S 6.15 mm


    Original     		PDF SiRA36DP SiRA36DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:


    Original     		PDF SiZ916DT SiZ340DT SiZ914DT VMN-PT0306-1402

    N-Channel MOSFETs

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


    Original     		PDF SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs