267M3502104K
Abstract: 2425-C
Text: Preliminary Product Description SXB-4089 Sirenza Microdevices’ SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost, surface-mountable plastic package. 400-2500 MHz ½ W Medium Power InGaP/GaAs HBT Amplifier with
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SXB-4089
SXB-4089
45propriate
MPO-100136
016REF
118REF
041REF
015TYP
EDS-103215
267M3502104K
2425-C
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RF AMP marking c7 sot-89
Abstract: marking 25 mmic sot-89 9C0603 ordering Sirenza amplifier SOT-89 Marking
Text: Preliminary Product Description SXB-4089 Sirenza Microdevices’ SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost, surface-mountable plastic package. 400-2500 MHz ½ W Medium Power InGaP/GaAs HBT Amplifier with
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SXB-4089
SXB-4089
45propriate
MPO-100136
016REF
118REF
041REF
015TYP
EDS-103215
RF AMP marking c7 sot-89
marking 25 mmic sot-89
9C0603 ordering
Sirenza amplifier SOT-89 Marking
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XA2 MMIC
Abstract: TOP MARKING C1 ROHM lot No MPO-100136 SIRENZA Sirenza C4 marking
Text: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-289
SXA-289
MPO-100136
016REF
118REF
041REF
015TYP
EDS-100622
XA2 MMIC
TOP MARKING C1 ROHM lot No
SIRENZA
Sirenza C4 marking
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Xa2 TRANSISTOR
Abstract: XA2 MMIC SXA-289 Sirenza amplifier SOT-89 marking XA2 EDS-100622 RF transistor marking IN SOT-89 sxa289 TOP MARKING C1 ROHM ROHM SOT89 MARKING
Text: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-289
SXA-289
016REF
118REF
041REF
EDS-100622
Xa2 TRANSISTOR
XA2 MMIC
Sirenza amplifier SOT-89
marking XA2
RF transistor marking IN SOT-89
sxa289
TOP MARKING C1 ROHM
ROHM SOT89 MARKING
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XA2 MMIC
Abstract: MPO-100136 TOP MARKING C1 ROHM lot No
Text: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-289
SXA-289
MPO-100136
016REF
118REF
041REF
015TYP
EDS-100622
XA2 MMIC
TOP MARKING C1 ROHM lot No
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MCH18
Abstract: SXA-389B xa3b EL115
Text: Preliminary Product Description SXA-389B Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular
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SXA-389B
SXA-389B
MPO-100136
016REF
118REF
041REF
015TYP
EDS-102915
MCH18
xa3b
EL115
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a3bz
Abstract: marking A3BZ 267M3502104 a3bz MARKING AN-075 MCH18 SXA-389B SXA-389BZ Sirenza amplifier SOT-89 MMIC SXA 389Bz marking
Text: SXA-389B SXA-389BZ Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent
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SXA-389B
SXA-389BZ
SXA-389B
AN-075
EDS-102915
a3bz
marking A3BZ
267M3502104
a3bz MARKING
AN-075
MCH18
SXA-389BZ
Sirenza amplifier SOT-89
MMIC SXA 389Bz marking
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1485C
Abstract: SE 194 Sirenza amplifier SOT-89
Text: Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-389B
SXA-389B
MPO-100136
016REF
118REF
041REF
015TYP
EDS-102915
1485C
SE 194
Sirenza amplifier SOT-89
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xa3b
Abstract: No abstract text available
Text: SXA-389B SXA-389BZ Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent
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SXA-389B
SXA-389BZ
MPO-100136
016REF
118REF
041REF
015TYP
SXA-389B
EDS-102915
xa3b
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Untitled
Abstract: No abstract text available
Text: Product Description Sirenza Microdevices’ SGB-4533 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V to
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SGB-4533
SGB-4533
SGB-4533Z
EDS-103091
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet Product Description Sirenza Microdevices’ SGB-2433 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta
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SGB-2433
SGB-2433"
EDS-103083
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SGB-2233
Abstract: No abstract text available
Text: Preliminary Data Sheet Product Description Sirenza Microdevices’ SGB-2233 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta
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SGB-2233
SGB-2233"
SGB-2233
EDS-103079
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CL05B
Abstract: RC1608J102CS CL05B103KBNC X6959 samsung flash marking S510069-28Z MCR01MZSJ000 cl10c101jbnc TV samsung Schematic circuit diagram HZ0402A601R-00
Text: Preliminary S510069-28Z Product Description AGC Amplifier Sirenza Microdevice's S510069-28Z is a Variable Gain Amplifier VGA , designed for use in Digital and Analog RF tuners and linear applications requiring IF signal amplification and control before
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S510069-28Z
S510069-28Z
EDS-104884
CL05B
RC1608J102CS
CL05B103KBNC
X6959
samsung flash marking
MCR01MZSJ000
cl10c101jbnc
TV samsung Schematic circuit diagram
HZ0402A601R-00
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marking xt2 mmic
Abstract: EDS-101157 MCH18 MCR03 SXT-289 267M3502104 Sirenza amplifier SOT-89
Text: Product Description SXT-289 Sirenza Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth
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SXT-289
SXT-289
016REF
118REF
041REF
EDS-101157
marking xt2 mmic
MCH18
MCR03
267M3502104
Sirenza amplifier SOT-89
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simple circuit diagram of electronic choke
Abstract: SGB-6433 SGB-6433Z SGB-64Z
Text: Product Description Sirenza Microdevices’ SGB-6433 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V
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SGB-6433
SGB-6433
SGB-6433Z
EDS-103095
simple circuit diagram of electronic choke
SGB-6433Z
SGB-64Z
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simple circuit diagram of electronic choke
Abstract: 10309 80021 SGB-6533
Text: Product Description Sirenza Microdevices’ SGB-6533 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply the
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SGB-6533
SGB-6533
SGB-6533"
EDS-103099
simple circuit diagram of electronic choke
10309
80021
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SGB-6433
Abstract: No abstract text available
Text: Product Description Sirenza Microdevices’ SGB-6433 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply the
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SGB-6433
SGB-6433
SGB-6433"
EDS-103095
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Untitled
Abstract: No abstract text available
Text: Product Description Sirenza Microdevices’ SGB-6533 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V
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SGB-6533
SGB-6533
SGB-6533Z
EDS-103099
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simple circuit diagram of electronic choke
Abstract: SGB-2233 80021 SGB-2233Z
Text: Preliminary Data Sheet Product Description Sirenza Microdevices’ SGB-2233 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V to
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SGB-2233
SGB-2233
SGB-2233Z
EDS-103079
simple circuit diagram of electronic choke
80021
SGB-2233Z
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Untitled
Abstract: No abstract text available
Text: Product Description Sirenza Microdevices’ SGB-6433 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V
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SGB-6433
SGB-6433
SGB-6433Z
EDS-103095
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet Product Description Sirenza Microdevices’ SGB-4333 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta
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SGB-4333
EDS-103087
SGB-4333"
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet Product Description Sirenza Microdevices’ SGB-2233 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta
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SGB-2233
SGB-2233"
EDS-103079
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet Product Description Sirenza Microdevices’ SGB-6533 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta
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SGB-6533
EDS-103099
SGB-6533"
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SGB-2433
Abstract: 100MHz-500MHz dk42
Text: Preliminary Data Sheet Product Description Sirenza Microdevices’ SGB-2433 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta
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SGB-2433
SGB-2433"
SGB-2433
EDS-103083
100MHz-500MHz
dk42
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