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    SISA04DN Price and Stock

    Vishay Siliconix SISA04DN-T1-GE3

    MOSFET N-CH 30V 40A PPAK1212-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SISA04DN-T1-GE3 Cut Tape 13,917 1
    • 1 $1.79
    • 10 $1.137
    • 100 $1.79
    • 1000 $0.55158
    • 10000 $0.55158
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    SISA04DN-T1-GE3 Digi-Reel 13,917 1
    • 1 $1.79
    • 10 $1.137
    • 100 $1.79
    • 1000 $0.55158
    • 10000 $0.55158
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    SISA04DN-T1-GE3 Reel 12,000 3,000
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    • 10000 $0.48619
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    RS SISA04DN-T1-GE3 Bulk 3,000
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    • 10000 $0.92
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    Quest Components SISA04DN-T1-GE3 26
    • 1 $1.4
    • 10 $1.12
    • 100 $0.7
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    New Advantage Corporation SISA04DN-T1-GE3 3,000 1
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    Vishay Intertechnologies SISA04DN-T1-GE3

    N-CHANNEL 30-V (D-S) MOSFET - Product that comes on tape, but is not reeled (Alt: 27AK1009)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SISA04DN-T1-GE3 Ammo Pack 9 Weeks, 3 Days 1
    • 1 $1.2
    • 10 $0.981
    • 100 $0.764
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    SISA04DN-T1-GE3 Reel 17 Weeks 3,000
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    Mouser Electronics SISA04DN-T1-GE3 34,698
    • 1 $1.45
    • 10 $0.977
    • 100 $0.666
    • 1000 $0.515
    • 10000 $0.45
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    Verical SISA04DN-T1-GE3 3,000 3,000
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    SISA04DN-T1-GE3 3,000 3,000
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    Arrow Electronics SISA04DN-T1-GE3 3,000 17 Weeks 3,000
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    Newark SISA04DN-T1-GE3 Cut Tape 1,393 1
    • 1 $0.424
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    • 1000 $0.424
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    SISA04DN-T1-GE3 Bulk 1
    • 1 $1.28
    • 10 $1.06
    • 100 $0.847
    • 1000 $0.847
    • 10000 $0.847
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    SISA04DN-T1-GE3 Reel 1
    • 1 $0.526
    • 10 $0.526
    • 100 $0.526
    • 1000 $0.526
    • 10000 $0.497
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    TTI SISA04DN-T1-GE3 Reel 147,000 3,000
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    • 10000 $0.437
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    TME SISA04DN-T1-GE3 1
    • 1 $1.098
    • 10 $0.859
    • 100 $0.603
    • 1000 $0.573
    • 10000 $0.573
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    Avnet Asia SISA04DN-T1-GE3 19 Weeks 3,000
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    EBV Elektronik SISA04DN-T1-GE3 18 Weeks 3,000
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    SISA04DN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SISA04DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A 1212-8 Original PDF

    SISA04DN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SiSA04DN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


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    SiSA04DN AN609, CON227 2416u 4444m 1980m 2098m 6705m 1721m 2894u PDF

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    Abstract: No abstract text available
    Text: SPICE Device Model SiSA04DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    SiSA04DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiSA04DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    SiSA04DN 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

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    Abstract: No abstract text available
    Text: New Product SiSA04DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)f 0.00215 at VGS = 10 V 40g 0.0031 at VGS = 4.5 V 40g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen IV Power MOSFET


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    SiSA04DN 2002/95/EC SiSA04DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiSA04DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)f 0.00215 at VGS = 10 V 40g 0.0031 at VGS = 4.5 V 40g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen IV Power MOSFET


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    SiSA04DN 2002/95/EC SiSA04DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SiSA04DN

    Abstract: No abstract text available
    Text: New Product SiSA04DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)f 0.00215 at VGS = 10 V 40g 0.0031 at VGS = 4.5 V 40g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen IV Power MOSFET


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    SiSA04DN 2002/95/EC SiSA04DN-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiSA04DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)f 0.00215 at VGS = 10 V 40g 0.0031 at VGS = 4.5 V 40g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen IV Power MOSFET


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    SiSA04DN 2002/95/EC SiSA04DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    S1203

    Abstract: No abstract text available
    Text: New Product SiSA04DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)f 0.00215 at VGS = 10 V 40g 0.0031 at VGS = 4.5 V 40g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen IV Power MOSFET


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    SiSA04DN 2002/95/EC SiSA04DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S1203 PDF

    draloric potentiometers cermet 581

    Abstract: WISTRON power sequence
    Text: Build Vishay into your Design VISHAY INTERTECHNOLOGY, INC. Corporate Headquarters // 63 Lancaster Avenue Malvern, PA 19355-2120 // United States p: 610.644.1300 // f: 610.296.0657 225289_Vishay_AR_CVR_R1.indd 1-3 ve Di mp Co e rs Di ve www.vishay.com 20 on


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:


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    SiZ916DT SiZ340DT SiZ914DT VMN-PT0306-1402 PDF

    PowerPAK 1212-8

    Abstract: mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip
    Text: 2005-2012:QuarkCatalogTempNew 9/20/12 4:25 PM Page 2005 25 Rectifiers, MOSFETs and Optocouplers RoHS ᭤ Innovative Products That Represent a Cross Section of Vishays Very Broad Portfolio ᭤ Products Selected for Their Versatility in Several Key Applications


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    VT1045BP-M3/4W VBT1045BP-E3/4W VFT1045BP-M3/4W VT2045BP-M3/4W VBT2045BP-E3/4W VFT2045BP-M3/4W VT3045BP-M3/4W VBT3045BP-E3/4W VFT3045BP-M3/4W VT4045BP-M3/4W PowerPAK 1212-8 mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip PDF

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Consumer Entertainment One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Consumer Entertainment Set-Top Boxes 4 LCD TVs 5 Games Consoles 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay


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    VMN-MS6761-1312 PDF

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. SuPER 12 Featured Products S12 2012 www.vishay.com/ref/2012S12 AND TEC O L OGY INNOVAT I N HN O 19 62-2012 Super 12 Featured Products mkP1848S フィルムコンデンサ 薄型設計のフィルムコンデンサ 2 VCuT05D1-SD0 双方向対称型


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    com/ref/2012S12 mkP1848S VCuT05D1-SD0 clP0603 VMN-MS6703-1205 PDF

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Consumer Entertainment One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Consumer コンシューマー エンターテインメント セットトップボックス 4 LCDテレビ 5


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    VMN-MS6792-1304-CNCE PDF

    POWERPAK SO8

    Abstract: SIS32
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Ultra-Low RDS on with Next Generation Technology AND TEC I INNOVAT O L OGY TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V


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    SiZ916DT VMN-PT0306-1209 POWERPAK SO8 SIS32 PDF

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Super 12 Featured Products S12 2012 www.vishay.com/ref/2012S12 AND TEC O L OGY INNOVAT I N HN O 19 62-2012 Super 12 Featured Products MKP1848S Film Capacitor Film capacitors with slim design. 2 VCUT05D1-SD0 BiSy Single-Line ESD


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    com/ref/2012S12 MKP1848S VCUT05D1-SD0 CLP0603 12-bit VMN-MS6650-1203 PDF

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - High- and Low-Side MOSFETs in One Compact Package PowerPAIR Co-Packaged MOSFETs Reduce Space, Increase Performance Over Two Discretes Key Benefits APPLICATIONS • High- and low-side MOSFETs in one


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    SiZ790DT SiZ914DT VMN-PT0182-1402 PDF

    N-Channel MOSFETs

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


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    SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs PDF