Untitled
Abstract: No abstract text available
Text: FCH043N60 N-Channel SuperFET II MOSFET 600 V, 75 A, 43 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance
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FCH043N60
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Untitled
Abstract: No abstract text available
Text: FCH041N60F N-Channel SuperFET II FRFET® MOSFET 600 V, 76 A, 41 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance
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FCH041N60F
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Untitled
Abstract: No abstract text available
Text: FCH041N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 77 A, 41 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance
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FCH041N60E
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FCH041N65F
Abstract: No abstract text available
Text: FCH041N65F N-Channel SuperFET II FRFET® MOSFET 650 V, 76 A, 41 mΩ Features Description • 700 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance
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FCH041N65F
FCH041N65F
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Brown Boveri induction Motor
Abstract: sj 2025 ic sj 2025 ASEA fast thyristor berulub F GD Rectifiers BROWN BOVERI servo motor bn16 brown Boveri diode Diode BN16
Text: IGBT Module Half-Bridge Configuration VII200-12G4 IC DC VCES VCE(sat) 3 High Short Circuit SOA Capability Symbol Test Conditions VCES VCGR T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MΩ VGES VGEM Continuous Transient IC25 IC100 ICM T C = 25°C
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VII200-12G4
IC100
Brown Boveri induction Motor
sj 2025
ic sj 2025
ASEA fast thyristor
berulub F
GD Rectifiers
BROWN BOVERI servo motor
bn16
brown Boveri diode
Diode BN16
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sj 2025 for amplifiers
Abstract: sj 2025 GP2W1002YP0F DSAE001141 max70s Ultrasonic Receive Transmit sensors ultrasonic transceiver ic IEC60825-1 ic sj 2025 ir transmitter and receiver sensor
Text: GP2W1002YP0F GP2W1002YP0F IrDA Compliant Transceiver Module 9.6 kb/s to 1.152 Mb/s MIR Low Profile Low Consumption current •Description ■Agency approvals/Compliance The GP2W1002YP0F is an infrared transceiver module for IrDA ver. 1.4 (MIR). The transceiver consisits of a pin-photo diode, infrared
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GP2W1002YP0F
GP2W1002YP0F
IEC60825-1
2002/95/EC)
E3-A00201EN
sj 2025 for amplifiers
sj 2025
DSAE001141
max70s
Ultrasonic Receive Transmit sensors
ultrasonic transceiver ic
ic sj 2025
ir transmitter and receiver sensor
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Untitled
Abstract: No abstract text available
Text: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. M13248 Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 16 (19/.0117) AWG TC 0.059 b) Insulation 0.032" Wall, Nom. Polyethylene(PE)
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M13248
M13248
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Untitled
Abstract: No abstract text available
Text: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. M13250 Construction Diameters (In) 1) Component 1 2 X 1 COND a) Conductor 12 (19/.0185) AWG TC 0.093 b) Insulation 0.037" Wall, Nom. Polyethylene(PE)
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M13250
AL1000
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Untitled
Abstract: No abstract text available
Text: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. M13247 Construction Diameters (In) 1) Component 1 2 X 1 COND a) Conductor 16 (19/.0117) AWG TC 0.059 b) Insulation 0.032" Wall, Nom. Polyethylene(PE)
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M13247
M13247
SHIELDE1000
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Untitled
Abstract: No abstract text available
Text: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. M13249 Construction Diameters (In) 1) Component 1 2 X 1 COND a) Conductor 14 (19/.0147) AWG TC 0.070 b) Insulation 0.032" Wall, Nom. Polyethylene(PE)
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M13249
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VLN 2003a
Abstract: bt 2025 2SK595
Text: SANYO SEMICONDUCTOR CORP 32E D ? tn ? 0 7 b D D C H 230 T“29“25. 2025 .Vafc-.l'^ ,1 T N-Chanrrel Junction Silicon FET Capacitor Microphone Applications 2206 Features . Especially suited for use in audio, telephone capacitor microphones . Excellent voltage characteristic
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7tn707b
D0CH230
T-29-25
T-91-20
SC-43
VLN 2003a
bt 2025
2SK595
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bt 2025
Abstract: 2SK334 Sanyo
Text: SAN YO S E M I C O N D U C T O R CORP 3SE » 7*H707fc. 0 0 C H 2 B 1 Ì ''-i - r '- ' . T -2 9 -2 5 N-Channel Junction Silicon FET 2025 Capacitor Microphone Applications • 933C FEATURE • Because it has an ultra-compact outline, sets can be made compact.
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T-29-25
T-91-20
SC-43
bt 2025
2SK334
Sanyo
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Untitled
Abstract: No abstract text available
Text: DASH NO. M CODE MADE FROM NOTES: 1. FOR USE WITH BELDEN 9209 & 8279 CABLES. 2. FOR CABLING INSTRUCTIONS SEE 3-117. 3. FOR CABLE TRIMMING USE KTJ-134 KTD-224. 4. FOR CRIMPING USE DIE KTH-2002. 5. INTERFACE PER KINGS ES-17. FIG. 6. 6. CENTER CONTACT TO BE SUPPLIED UNASSEMBLED.
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KTJ-134
KTD-224.
KTH-2002.
ES-17.
ASTM-D-1457
ASTM-B-196
-B-626
-S-365
MIL-G-45204
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TMI 1480
Abstract: pin configuration LCD 3.5-DIGIT 40 pin configuration LCD 3.5-DIGIT ic sj 2025
Text: O K I Semiconductor MSM5052-01 Thermometer with Clock Function GENERAL DESCRIPTION The MSM5052-01 is an IC equipped with a digital thermometer possessing a temperature alarm, and a clock function. This device uses a thermistor as its sensing element, is able to sense temperatures in the range
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MSM5052-01
MSM5052-01
80-PIN
QFP80-P-1420-K
QFP84-P-1420-BK
TMI 1480
pin configuration LCD 3.5-DIGIT
40 pin configuration LCD 3.5-DIGIT
ic sj 2025
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2SA1237
Abstract: 9571 transistor Pc 9571
Text: SANYO SEMICONDUCTOR CORP 35E D 7^707^ u.,jm OOCHläH 7 fâk • Tr2.9~Z7 P N P Epitaxial Planar Silicon C om p osite Transistor 2029A Differential Amp Applications S57C Applications . Differential amp, current mirror, temperature compensator. Features . Excellent in thermal equilibrium and suited for use in differential amp
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e17G7b
T-91-20
SC-43
2SA1237
9571 transistor
Pc 9571
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2SA608
Abstract: 2SC536 transistor 2sa608 2005A 2SA60 2SA608 D 2SA1782 2SA608KNP 2SA608NP 2SA608SPA
Text: SANYO S EM I CO ND UC TO R m 1 ;, j 35E CORP D • 7=n707t 0001180 T B T - 2 7 ' / r-: 2oo3A PNP Epitaxial Planar Silicon Transistors General-Purpose Amp, Switching Applications 334 I Features . The 2SA608 is classified into 2 types of SP, NP according to the case outline.
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1707k
2SA608
2SC536
2SA608.
2SA608SPA
2SA608NP
2SA608KNP
T-91-20
SC-43
transistor 2sa608
2005A
2SA60
2SA608 D
2SA1782
2SA608KNP
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yg 2025
Abstract: 2SA929 2SA930 2003A 4j to92 2SC1570 930 transistor transistor 2sc1570
Text: SAN YO S E M I C O N D U C T O R CORP 32E D '-'.jpMtjr'q • T T T T O T bo o o f l a a o4 a T - 27- /S PNP Epitaxial Planar Silicon Transistor 2003A Very Low-Noise Amp Applications 37 ID The 2SA929, 930 are transistors for very low noise AF amp. They are especially
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T-27-IS
2SA929,
2SC1570.
T-91-20
SC-43
yg 2025
2SA929
2SA930
2003A
4j to92
2SC1570
930 transistor
transistor 2sc1570
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1N760
Abstract: 1N760A in995 2N915 7N121 2N656 2N697 2N699 2N703 2N706
Text: CRIMSON S EM I C O N D U C T O R INC T=| DE | B 5 m O T b 2514096 CRIMSON SEMICONDUCTOR INC 99D Df VICE TYPl P A C K AG E 00292 D 7“ — 3<sr- û ' B VC EO BVC BO BVEBO ICBO @ VCB IV i M IN IVI M IN V I M IN (m A I MAX ltf| HFf @ VC & IC M lN M AX |V t
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2N656
2N697
2N699
2N703
2N706
2N760
2N760A
2N783
2N784
2N834
1N760
1N760A
in995
2N915
7N121
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2N784
Abstract: 2N656 2N697 2N699 2N703 2N706 2N760 2N760A 2N783 2N834
Text: CRIMSON SEMICONDUCTOR INC T=| DE | B 5 m O T b □□□□2^2 a 2514096 CRIMSON SEMICONDUCTOR INC 99D 00292 D 7“— 3<sr- 6 ' Df VICE TYPl PACKAGE BVCEO BVCBO BVEBO ICBO @ VCB I V i M IN IVI M IN V I M IN (m A I MAX ltf| HFf @ V C & IC M lN FT COB M AX
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2N656
2N697
2N699
2N703
2N706
2N760
2N760A
2N783
2N784
2N834
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sj 2025
Abstract: 2SK597 00Gt
Text: SANYO SEMICONDUCTOR CORP 3EE D S3 7 cH 7 0 7 b 00GT23fl 4 T-29-25 2026 N-Channel Junction Silicon FET Capacitor Microphone Applications 2216 Features . Especially suited for use in audio, telephone capacitor microphones . Excellent voltage characteristic
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7cH707b
00GT23fl
-100uA
T-91-20
SC-43
sj 2025
2SK597
00Gt
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2SA1240
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP 32E D • 7^^70713 0 D □ fl fl-3 0 7 Hi T ' M - J PNP Epitaxial Planar Silicon Transistor 2029A Differential Amp Applications 977C Applications . Differential amp, current mirror. Features . Excellent in t h e r m a l e q u i l i b r i u m
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7T17D7b
T-91-20
SC-43
2SA1240
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transistor 9751
Abstract: 2SA1239
Text: SANYO SEMICONDUCTOR CORP 32E D ? cl li 7G7ki OOCHlû? f p .i T - ^ 9 - ^ 7 PNP Epitaxial Planar Silicon Composite Transistor 20 29 A -.w S D if f e r e n t ia l A m p A p p lic a t io n s 975C Applications . Differential amp, current mirror, temperature compensator.
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T-91-20
SC-43
transistor 9751
2SA1239
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transistor c2274
Abstract: transistor a984 A984 sc2274 c2274 2SA984 sanyo C2274 E 2SC2274 2SA984 C2274K
Text: SANYO , ".• v SEMICONDUCTOR <.¡r\ CORP 35E D ■ 7*H707fc, OOtHlfll 1 B9 :rrem . * T'Z ?-;:/ PNP/ NPN Epitaxial Planar \ Silicon Transistors 2003A Low-Frequency Power Amp Applications i 46SF Features . High breakdown voltage(Vc e o =50/80V . . High current (Ic=500mA).
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50/80V)
500mA)
2SA984
C2274
a984k
c2274k
T-91-20
SC-43
transistor c2274
transistor a984
A984
sc2274
2SA984 sanyo
C2274 E
2SC2274
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2SK333
Abstract: 2028A 2064 fet Sanyo Sanyo TV cm 25
Text: SANY O S E M I C O N D U C T O R CO RP 32E D 7 cn 7 Q 7 b OGOflflflfl S T '2 7 ^ 7 H|l N -C h an n el Ju nctio n Silicon C om posite FET 2027a Differential Amp Applications - Features • Especially suited for use in first stage of differential amp. • High breakdown voltage and wide dynamic range
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T-91-20
to-92
sc-43
2SK333
2028A
2064 fet
Sanyo
Sanyo TV cm 25
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