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    SM 58 B TRANSISTORS Search Results

    SM 58 B TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SM 58 B TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    2N2218

    Abstract: 386 amplifier
    Text: 2N2218 NPN Small Signal General Purpose Amplifier & Switch. 3.86 Tr. 1 of 2 Home Part Number: 2N2218 Online Store 2N2218 Diodes NPN Sm all Signal G eneral Purpo s e Am plifier & Sw it ch. Transistors


    Original     		PDF 2N2218 com/2n2218 2N2218 386 amplifier

    MHW5342A

    Abstract: No abstract text available
    Text: MOTOROU. Order this document bv MHW5342ND SEMICONDUCTOR TECHNICAL DATA I I The RF Line 450 MHz CATV Amplifier MHW5342A . . . designed specifically for 450 MHz CATV applications. Features ion-imptanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization


    Original     		PDF MHW5342ND MHW5342A MHW5342AID MHW5342A

    WMV smd transistor

    Abstract: smd mk
    Text: f.con ISO 14001 Alphanumerical product list art. no. page art. no. page art. no. page art. no. page 1706 . G 1831 . ASL . SMD . ASL . SMD . B SM ASLA . ASLG . BADM . BADP . BK 01 32 BL 1 . BL 10 . BL 11 . BL 12 . BL 13 . BL 14 .


    Original     		PDF

    transistor 5cw

    Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
    Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000


    Original     		PDF CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10

    AT-60500

    Abstract: AT-01635 AT-21400 AT21400 AT-60586
    Text: Silicon Bipolar Transistors Low Noise Transistors Typical Specifications at +25°C Case Temperature Part Number Test Freq. (GHz) NF0 (dB) PldB (dBm) I 21eI2 @ 1.0 GHz (dB) Max. Usable Freq.M (GHz) w* (GHz) AT-41400 AT-60100 AT-60200 AT-60500 2.0 2.0 2.0


    OCR Scan     		PDF AT-41400 AT-60100 AT-60200 AT-60500 AT-41410 AT-41470 AT-60S10 AT-60S70 AT-41435 AT-41472 AT-01635 AT-21400 AT21400 AT-60586

    2N3583

    Abstract: 2N4240 2N36 2N35
    Text: 2N3583 2N3584* 2N3585* 2N4240 *also available as i? t/V E sr JAN, JANTX, JANTXV HIGH-VOLTAGE SILICON N-P-N TRANSISTORS For High-speed Switching and Linear-Amplifier Applications Features • 100-percent tested to assure freedom from second breakdown in both forwardand reverse-bias conditions when operated within specified limits


    OCR Scan     		PDF 2N3583 2N3584* 2N3585* 2N4240 100-percent 2N3583, 2N4240 2N36 2N35

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Green L i n e ' MGSF3442XT1 Preliminary Information Motorola P referred Device Low rDS on Sm all-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N -C H A N N EL E N HA N C EM EN T-M O D E TM O S MOSFET rDS(on) = 58 m£i (TYP)


    OCR Scan     		PDF MGSF3442XT1 10Vdc, b3b7255 00T3b3D

    2N6758

    Abstract: 6757
    Text: UNITRODE CORP 9347963 t UNITRODE CORP ~~~ 92D POWER MOSFET TRANSISTORS 2 0 0 V o lt, 0 .4 o o i c mt , s 1 04 96 D j ; j t x , j t x v 2N6758 T - ' b l - i i O h m N -C h a n n e l " DESCRIPTION The Unltrode power MOSFET design utilizes the most advanced technology available.


    OCR Scan     		PDF 2N6758 1L-S-19500/542A 2N6758 6757

    NE98203

    Abstract: 2SC1662 NE98200 NE98208 2SC1660 NE98241 S21E
    Text: NEC/ CALIFORNIA 5bE D b427414 GODESSE =Î43 « N E C C - T -3 1 -Z NEC NE98200 NE98203 NE98208 NE98241 NPN SILICON HIGH SPEED SWITCHING TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • W ID E D Y N A M IC R A N G E The N E982 series of N PN silicon transistors features a high


    OCR Scan     		PDF NE98200 NE98203 NE98208 NE98241 NE982 transis24 2SC1662 2SC1660 NE98241 S21E

    DIODE BUZ

    Abstract: sis 661
    Text: SIEMENS BUZ 346 SIPMOS Power Transistors • • • N channel Enhancement mode Avalanche-rated Ordering Code Tc ^DS on Package 1> 58 A 73 °C 0.018 n TO -218 AA C67078-S3120-A2 58 A 73 ‘ C 0.018£2 TO -218 AA C67078-S3120-A 4 Type VDS ¡a BUZ 346 50 V


    OCR Scan     		PDF C67078-S3120-A2 C67078-S3120-A DIODE BUZ sis 661

    MA-406 8.0000M-C3

    Abstract: No abstract text available
    Text: ill ÆSj ra?MrtriL V u.Ajm-mm S micmsemj Comm erce Drive s r s s s ^ 18936-1013 s o i 332 RF & MICROWAVE TRANSISTORS UHF SMALL SIGNAL HtGH FT • ■5,5 GHï VfcHY LOW NCISfc ALL GOLD ME': ALLI2E0 HERMETIC PACKAGE PâN CONNECTIONS DESCRIPTION Ttw SOI 332 is an all gold met&iltefid NPN silicon


    OCR Scan     		PDF

    2SC3584

    Abstract: ne3813 SC358 NE68133 10r 236 NE68100 NE AND "micro-X" el3025 2SC3582 2SC3583
    Text: N E C / CALIFORNIA 1SE NEC J> b427414 OOG144S 7 NPN SILICON HIGH FREQUENCY TRANSISTOR T-3I-& T -3 I-I7 NE68100 NE68132 NE68133 NE68135 NE68137 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz The NE681 series of NPN silicon transistors are designed for


    OCR Scan     		PDF OOG144S NE68100 NE68132 NE68133 NE68135 NE68137 NE68100, NE68135. NE681 2SC3584 ne3813 SC358 10r 236 NE AND "micro-X" el3025 2SC3582 2SC3583

    2N6839

    Abstract: No abstract text available
    Text: HEWLETT-PACKARD i CMPNTS 2GE D □ 4447534 0G0SS3S 3 E3 *31 H E W L E T T PACKARD 1:rJl 3 1 -2 -3 T'3 3-Ö S' L inear P ow er Transistors HXTR-3002 Chip Technical Data HXTR-3102, TX and TXV 2N6839 HXTR-3104, TX


    OCR Scan     		PDF HXTR-3002 HXTR-3102, 2N6839 HXTR-3104, 1SalE12i MIL-S-19500, MIL-STD-750 2N6839

    MMBR911L

    Abstract: MPS911
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M PS911 M M B R 911L NPN Silicon High Frequency Transistors . . d e sig ned for lo w noise, w id e d y n a m ic ran g e front-end am p lifiers and low -noise V C O ’s. A v a ila b le in a surface-m oun table plastic package, as w ell as the popular


    OCR Scan     		PDF PS911 O-226AA A/500 MMBR911L MPS911

    MPS911

    Abstract: 75RC tjm sot23 MBR911 2223 TO-92
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR911LT1 MPS911 NPN Silicon High-Frequency Transistors D esigned for low noise, w ide dyn a m ic range fro n t-e n d am p lifie rs and low -noise VCO's. Available in a surface-m ountable plastic package, as well as


    OCR Scan     		PDF MMBR911LT1 MPS911 75RC tjm sot23 MBR911 2223 TO-92

    BSY52

    Abstract: BSY51 BSY 51 bsy 39
    Text: BSY51 BSY52 SILICON PLANAR NPN PRELIM IN A R Y DATA G EN ER A L PURPOSE A M PLIFIERS The B S Y 51 and B S Y 52 are silicon planar epitaxial NPN transistors in Jedec T'O -39 metal case, intended for use in high performance am plifier, oscillator and switching circuits.


    OCR Scan     		PDF BSY51 BSY52 BSY52 BSY 51 bsy 39

    Untitled

    Abstract: No abstract text available
    Text: 3GE D • 7^237 0D31DÔ1 1 ■ rz 7 sgs-thom son ^ 7 # bsyss o « [im i@ T M « § BSY56 S G S-THOMSON GENERAL PURPOSE AMPLIFIERS DESCRIPTION The BSY55 and BSY56 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, inten­ ded for use in high performance amplifier, oscillator


    OCR Scan     		PDF 0D31DÃ BSY56 BSY55 BSY56 BSY55 ----T-31-23 BSY55-BSY56

    PT 2102 ic

    Abstract: HXTR-41Q1 HXTR-4101TXV 2N6679 HPAC-70GT HXTR-2101 HXTR-4101 hxtr-6105 6105tx BV EI 302 2003
    Text: H E W L E T T - P A C K A R D n CMPNTS EOE D £3 44475Û4 m General Purpose Transistors HXTR-2001 Chip Technical Data Features ^ k laert ; LJ Generic Chip HXTR-2001 Recommended Die Attach and Bonding Procedures Eutectic Die Attach at a stage temperature of 410 ± 10°C under


    OCR Scan     		PDF HXTR-2001 2N6679, HXTR-2101, HXTR-2102, HXTR-4101, HXTR-6105, HXTR-6106, HXTR-6106 MIL-S-19500, PT 2102 ic HXTR-41Q1 HXTR-4101TXV 2N6679 HPAC-70GT HXTR-2101 HXTR-4101 hxtr-6105 6105tx BV EI 302 2003

    NPN MATCHED PAIRS

    Abstract: 200 watts audio amp power transistors pnp NPN pnp MATCHED PAIRS NTE388 NTE61 NTE60 NTE6061 PNP 5GHz t0202 NTE58
    Text: BI-POLAR TRANSISTORS NTE TVpe Number Polarity and Material Description and Application 59 PNP-Si High Pwr Audio Output Compl to N TE 58 60 NPN-Si High Pwr Audio, Disk Head , Positioner, Linear Applications (Compl to NTE61) 60MP NPN-Si Matched Pair of NTE60


    OCR Scan     		PDF NTE58) NTE61) NTE60 NTE60) NTE88) NTE87 NTE87) NTE88 b43125ci NPN MATCHED PAIRS 200 watts audio amp power transistors pnp NPN pnp MATCHED PAIRS NTE388 NTE61 NTE60 NTE6061 PNP 5GHz t0202 NTE58

    NDS7002A

    Abstract: No abstract text available
    Text: March 1993 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National’s very high cell density third generation DMOS technology. These products have been


    OCR Scan     		PDF 2N7000/2N7002/NDF7000A/NDS7002A NDS7002A

    bc547 smd transistor

    Abstract: BC547 smd lg smd transistor smd transistor BC547 smd transistor BC557 bc557 SMD philips SMD BC547 BC547 TRANSISTOR SMD transistor SMD bc547 BC557 smd
    Text: •I ^53^31 DD SM S S 7 T75 « A P X N AJ1ER P H I L I P S / D I S C R E T E BCV65 BCV65B b7E D SILICON PLANAR TRANSISTORS A m atched pair o f P-N-P and N-P-N crystal, based on th e BC557 and BC547, in a m icro m in ia tu re SO T-143 envelope. C om plem entary crystals give advantages in P.C.B. la y o u t using S.M .D. tech no lo g y.


    OCR Scan     		PDF bbS3T31 BCV65 BCV65B BC557 BC547, OT-143 OT-143. BCV65: BCV65B: bc547 smd transistor BC547 smd lg smd transistor smd transistor BC547 smd transistor BC557 bc557 SMD philips SMD BC547 BC547 TRANSISTOR SMD transistor SMD bc547 BC557 smd

    2SC4087

    Abstract: 2SC4090 NE73439 NE73439B
    Text: NEC/ 5bE D CALIFORNIA NEC b427414 00024btì b4T • N E C C T - 'S l- is NPN SILICO N GENERAL PU RPO SE TRANSISTO R NE73439 NE73439B OUTLINE DIMENSIONS FEATURES • H IG H G A IN BA N D W ID T H P R O D U C T : Units in mm OUTLINE 39 (SOT-143) 2.0 GHz (TYP)


    OCR Scan     		PDF b457414 NE73439 NE73439B NE73439B 2SC4087 2SC4090

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBR571LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors M M BR571LT1 M RF5711LT1 D esigned fo r low noise, w ide d yn a m ic range fro n t-e n d a m p lifie rs and low -noise V C O ’s. Available in a surface-m ountable plastic packages. This


    OCR Scan     		PDF MMBR571LT1/D RF5711LT1, MRF571) A/500 MMBR571LT1) MRF5711 18A-05 MRF5711LT1 MMBR571LT1 MRF5711LT1