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    SMCT2TA65N14A10 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SMCT2TA65N14A10 Silicon Power SIZE 6 MCT SEMICONDUCTOR DISCHARGE SWITCH Original PDF

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    MCT thyristor

    Abstract: MOS-Controlled Thyristor half hour delay circuit 1400V MCT MOS-Controlled Thyristor N-type uf25c SMCT2TA65N14A10 100C 5A 200V SCR die s6 65a
    Text: 3 Northway Lane North SMCT2TA65N14A10 Latham, New York 12110 – 2204 SIZE 6 MCT SEMICONDUCTOR DISCHARGE SWITCH DESCRIPTION: This semiconductor discharge switch utilizes an n-type MOS-controlled thyristor, designed for the control of high power circuits with very small amounts of input energy. The MCT features high peak current capability


    Original     		PDF SMCT2TA65N14A10 15volts. MCT thyristor MOS-Controlled Thyristor half hour delay circuit 1400V MCT MOS-Controlled Thyristor N-type uf25c SMCT2TA65N14A10 100C 5A 200V SCR die s6 65a

    SMCT2TA65N14A10

    Abstract: 1400V MCT
    Text: T h in P a k T ech n ology S h rin k s P o w er M odules, P o w er H ybrids and U ltra-H igh Speed Sw itch in g D ev ices V ic Tem ple, Silicon P ow er C o rp o ra tio n • «mi * rr hi i tt g m A * » .2 V 2 '¿ ¡T ,* C l M ilt ~ Discharge Test Voltage:


    OCR Scan     		PDF \520vS 00V/div) 000A/div) SMCT2TA65N14A10) 12tan2) SMCT2TA65N14A10 1400V MCT