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    SMD 4A TRANSISTOR Search Results

    SMD 4A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD 4A TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor smd bh

    Abstract: transistor smd marking bh MARKING SMD PNP TRANSISTOR R marking BH rank R smd marking BH bh marking KEXIN BH SMD MARKING SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A 2SB1386
    Text: Transistors SMD Type Low Frequency Transistor 2SB1386 Features Low VCE sat . VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit


    Original     		PDF 2SB1386 30MHz transistor smd bh transistor smd marking bh MARKING SMD PNP TRANSISTOR R marking BH rank R smd marking BH bh marking KEXIN BH SMD MARKING SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A 2SB1386

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification FCX1047A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 20 Amps. Extremely low saturation voltage E.g. 25mv Typ. Extremely low equivalent on-resistance. RCE sat 40mÙ at 4A.


    Original     		PDF FCX1047A 4008-318-1IC 50MHz

    BC859 smd

    Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C BC859
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E


    Original     		PDF OT-23 BC859 BC860 BC859A BC859B BC859C BC860A BC860B BC859 smd BC859A BC859B BC859C BC860 BC860A BC860B BC860C BC859

    BC859

    Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F


    Original     		PDF ISO/TS16949 OT-23 BC859 BC860 BC859A BC859B BC859C BC860A BC859 BC859A BC859B BC859C BC860 BC860A BC860B BC860C

    T3036

    Abstract: No abstract text available
    Text: Transistors SMD Type Low VCE sat Transistor T3036 TO-252 Features Low saturation voltage.typicaliy VCE(sat)=0.13V at IC/IB=4A/50mA. +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2 1 2.3 3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15


    Original     		PDF T3036 O-252 A/50mA. 50MHz T3036

    CDIP2-T14

    Abstract: 5962R9569001V9A 5962R9569001VCC 5962R9569001VXC HS0-5104ARH-Q HS1-5104ARH-Q HS-5104ARH HS9-5104ARH-Q DIELECTRICALLY ISOLATED INTERSIL BIPOLAR
    Text: HS-5104ARH TM Data Sheet August 2001 Radiation Hardened Low Noise Quad Operational Amplifier tle 4A iad- se d raal plitho ds r- • Electrically Screened to SMD # 5962-95690 The HS-5104ARH is a radiation hardened, monolithic quad operational amplifier that provides highly reliable


    Original     		PDF HS-5104ARH HS-5104ARH 100kRAD CDIP2-T14 5962R9569001V9A 5962R9569001VCC 5962R9569001VXC HS0-5104ARH-Q HS1-5104ARH-Q HS9-5104ARH-Q DIELECTRICALLY ISOLATED INTERSIL BIPOLAR

    ME3587-G

    Abstract: No abstract text available
    Text: SMD Type MOSFET Field Effect Transistor KE3587-G ME3587-G ( SOT-23-6 ) • Features Unit: mm ● RDS(ON) ＜0.045Ω @VGS=4.5V ● RDS(ON) ＜0.068Ω @VGS=2.5V ● RDS(ON) ＜0.12Ω @VGS=1.8V D1 ０．３ｍｉｎ ● N-channel:VDS=20V ID=4A D2 S1 ● P-channel:VDS=-20V ID=-2A


    Original     		PDF KE3587-G ME3587-G) OT-23-6 -250uA 250uA -250uA ME3587-G

    smd transistor S5

    Abstract: smd transistor s3 smd 4A data smd TRANSISTOR 257 smd transistor 2a j TO-5 amps pnp transistor smd TRANSISTOR 3 f smd5 smd pk transistor S3 SMD
    Text: SFT6036 series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 4 AMP PNP Darlington Power Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information1/


    Original     		PDF SFT6036 SFT6036 O-254 O-257 200oC SFT6039 O-254, O-257, smd transistor S5 smd transistor s3 smd 4A data smd TRANSISTOR 257 smd transistor 2a j TO-5 amps pnp transistor smd TRANSISTOR 3 f smd5 smd pk transistor S3 SMD

    smd 4A data

    Abstract: No abstract text available
    Text: SFT6039 series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 4 AMP NPN Darlington Power Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information 1/


    Original     		PDF SFT6039 SFT6039 O-254 O-257 200oC SFT6036 O-254, O-257, smd 4A data

    smd transistor S5

    Abstract: smd transistor s3 npn smd 2a NPN 200 VOLTS 1 amp smd TRANSISTOR smd TRANSISTOR 257 S3 SMD smd transistor 2a j smd npn darlington pk transistor npn smd transistor 257
    Text: SFT6039 series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 4 AMP NPN Darlington Power Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information 1/


    Original     		PDF SFT6039 SFT6039 O-254 O-257 200oC SFT6036 O-254, O-257, smd transistor S5 smd transistor s3 npn smd 2a NPN 200 VOLTS 1 amp smd TRANSISTOR smd TRANSISTOR 257 S3 SMD smd transistor 2a j smd npn darlington pk transistor npn smd transistor 257

    power transistor Ic 4A NPN smd

    Abstract: transistor Ic 4A datasheet NPN smd smd 4A transistor power transistor Ic 4A datasheet NPN smd smd 4A data npn switching transistor Ic 5A transistor Ic 4A datasheet NPN FCX1047A 230NS rce marking
    Text: Transistors SMD Type NPN Silicon Power Switching Transistor FCX1047A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 20 Amps. Extremely low saturation voltage E.g. 25mv Typ. Extremely low equivalent on-resistance.


    Original     		PDF FCX1047A Type000 50MHz power transistor Ic 4A NPN smd transistor Ic 4A datasheet NPN smd smd 4A transistor power transistor Ic 4A datasheet NPN smd smd 4A data npn switching transistor Ic 5A transistor Ic 4A datasheet NPN FCX1047A 230NS rce marking

    KO3402

    Abstract: equivalent smd mosfet N-CHANNEL MOSFET 30V 2A SOT-23 DIODE smd 434 smd 4A data smd diode JC smd transistor ja AO3402 mosfet vgs 5v iGSS 80 nA Vgs 0v
    Text: MOSFET IC SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3402 AO3402 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 55m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V) RDS(ON) 110m 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 +0.1 0.97-0.1 RDS(ON) 0.55 ID = 4 A


    Original     		PDF KO3402 AO3402) OT-23 equivalent smd mosfet N-CHANNEL MOSFET 30V 2A SOT-23 DIODE smd 434 smd 4A data smd diode JC smd transistor ja AO3402 mosfet vgs 5v iGSS 80 nA Vgs 0v

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Type SMD Product specification 2SK2084S Features TO-252 Low on-resistance High speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low drive current 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15


    Original     		PDF 2SK2084S O-252

    MZT2955

    Abstract: MZT3055 NPN SOT-223 33a sot223
    Text: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS MZT2955 PNP MZT3055 NPN SOT-223 Formed SMD Package With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications


    Original     		PDF MZT2955 MZT3055 OT-223 C-120 MZT3055Rev061104E NPN SOT-223 33a sot223

    FZT953

    Abstract: continuous current Amps peak current Very saturated smd transistor 2A
    Text: Transistors SMD Type PNP Silicon Planar High Current Transistors FZT953 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 5 Amps continuous current , up to 15 Amps peak current. Very low saturation voltages. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2


    Original     		PDF FZT953 OT-223 -400mA -10mA, -100mA, 50MHz -200mA FZT953 continuous current Amps peak current Very saturated smd transistor 2A

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type PNP Silicon Planar High Current Transistors FZT953 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 5 Amps continuous current , up to 15 Amps peak current. Very low saturation voltages. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2


    Original     		PDF FZT953 OT-223 -200mA -400mA -10mA, -100mA, 50MHz

    SMD IC ts 4141

    Abstract: ts 4141 npn smd 3a MZT2955 MZT3055 pnp smd 64
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS MZT2955 PNP MZT3055 NPN SOT-223 Formed SMD Package With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator


    Original     		PDF MZT2955 MZT3055 OT-223 C-120 MZT3055Rev061104E SMD IC ts 4141 ts 4141 npn smd 3a pnp smd 64

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS MZT2955 PNP MZT3055 NPN SOT-223 Formed SMD Package With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator


    Original     		PDF MZT2955 MZT3055 OT-223 C-120 MZT3055Rev061104E

    philips power transistor bd139

    Abstract: bd139 smd ksh200 equivalent power transistors cross reference TRANSISTOR REPLACEMENT table for transistor AN10405 smd for bd139 BD136 SMD TRANSISTOR bd435 smd BD131 smd
    Text: AN10405 Increased circuit efficiency, less required board space and saved money by replacing power transistors by low VCEsat BISS transistors Rev. 01.00 — 06 January 2006 Application note Document information Info Content Keywords Bipolar transistors, BISS, low VCEsat, PBSS, power transistors


    Original     		PDF AN10405 philips power transistor bd139 bd139 smd ksh200 equivalent power transistors cross reference TRANSISTOR REPLACEMENT table for transistor AN10405 smd for bd139 BD136 SMD TRANSISTOR bd435 smd BD131 smd

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SD2414 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 2 .5 4 -0+ 0.2.2 8 .7 -0+ 0.2.2


    Original     		PDF 2SD2414 O-263

    2SD2414

    Abstract: No abstract text available
    Text: Transistors SMD Type Silicon NPN Triple Diffused Type 2SD2414 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 2 .5 4 -0+ 0.2.2 8 .7 -0+ 0.2.2


    Original     		PDF 2SD2414 O-263 2SD2414

    A7 SMD TRANSISTOR

    Abstract: SMD a7 Transistor smd transistor marking a7 smd TRANSISTOR sot-23 a7 smd transistor A7 KO3407 smd transistor A7 s 52 smd a7 smd transistor A7 sot 23 smd diode a7
    Text: Transistors IC SMD Type P-Channel Enhancement Mode Field Effect Transistor KO3407 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 RDS ON 87m 1 (VGS = -10V) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (VGS = -4.5V) +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original     		PDF KO3407 OT-23 A7 SMD TRANSISTOR SMD a7 Transistor smd transistor marking a7 smd TRANSISTOR sot-23 a7 smd transistor A7 KO3407 smd transistor A7 s 52 smd a7 smd transistor A7 sot 23 smd diode a7

    smd transistor A1

    Abstract: DIODE smd marking A1 smd transistor 2a 43 KO3401 smd transistor marking A1 SMD TRANSISTOR MARKING 94 SMD TRANSISTOR A1 SOT23 smd diode A1 smd transistor A1 sot-23 marking A1 TRANSISTOR
    Text: Transistors IC SMD Type P-Channel Enhancement Mode Field Effect Transistor KO3401 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 VDS V = -30V 0.4 3 (VGS = -10V) RDS(ON) 65m (VGS = -4.5V) 120m 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (VGS = -2.5V) +0.05 0.1-0.01


    Original     		PDF KO3401 OT-23 smd transistor A1 DIODE smd marking A1 smd transistor 2a 43 KO3401 smd transistor marking A1 SMD TRANSISTOR MARKING 94 SMD TRANSISTOR A1 SOT23 smd diode A1 smd transistor A1 sot-23 marking A1 TRANSISTOR

    2SD2201

    Abstract: No abstract text available
    Text: Transistors SMD Type Switching Applications 2SD2201 TO-263 1 .2 7 -0+ 0.1.1 Features Surface mount type device making the following possible. Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low collector-to-emitter saturation voltage. 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54


    Original     		PDF 2SD2201 O-263 2SD2201