smd JS
Abstract: smd diode marking ja diode js smd transistor js 650 DIODE k 650 smd diode JS smd diode nh BAT62 ja smd
Text: Diodes SMD Type Silicon Schottky Diode BAT62 Unit: mm Features Low barrier diode for detectors up to GHz frequencies. Absolute Maxim um Ratings Ta = 25 Param eter Sym bol Value Unit VR 40 V Reverse voltage Forward current Total power dissipation, T S 85 Junction tem perature
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BAT62
smd JS
smd diode marking ja
diode js
smd transistor js
650 DIODE
k 650
smd diode JS
smd diode nh
BAT62
ja smd
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smd JS
Abstract: smd JS 3 diode smd transistor js DIODE JS marking bbs diode sot 100 mA diode diode ja smd marking SOT343 smd diode marking ja
Text: Diodes SMD Type Silicon RF Switching Diode BAR81W SOT-343 Unit: mm Features Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss Absolute Maxim um Ratings Ta = 25 Param eter Sym bol Value Unit VR 30 V IF 100 mA P tot 100
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BAR81W
OT-343
smd JS
smd JS 3
diode
smd transistor js
DIODE JS
marking bbs diode sot
100 mA diode
diode ja
smd marking SOT343
smd diode marking ja
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smd JS
Abstract: smd marking S9 BAT14-099 smd JS 5 marking s9 DIODE JS smd transistor js BAT14 bat14-099 data sheet smd rf transistor marking
Text: Diodes SMD Type Silicon Dual Schottky Diode BAT14-099 Unit: mm Features DBS mixer application to 12 GHz Low noise figure Medium barrier type Absolute M axim um Ratings Ta = 25 Param eter Sym bol Value Unit Reverse voltage VR 4 V Forward current IF 90 mA 55
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BAT14-099
smd JS
smd marking S9
BAT14-099
smd JS 5
marking s9
DIODE JS
smd transistor js
BAT14
bat14-099 data sheet
smd rf transistor marking
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BAT68-03W
Abstract: 318 MARKING DIODE
Text: Diodes SMD Type Silicon Schottky Diode BAT68-03W SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features For mixer applications in the VHF/UHF range +0.1 2.6-0.1 1.0max For high speed switching 0.375 +0.05 0.1-0.02 0.475 Absolute M axim um R atings Ta = 25
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BAT68-03W
OD-323
BAT68-03W
318 MARKING DIODE
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diode marking yellow T
Abstract: smd diode UM 09 100 mhz diode smd diode UM 07 smd rf transistor marking BA597
Text: Diodes SMD Type Silicon PIN Diode BA597 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features RF switch, RF attenuator for frequencies above 10 MHz +0.1 2.6-0.1 Very low IM distortion 1.0max 0.375 +0.05 0.1-0.02 0.475 A bsolute M axim um R atings T a = 25
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BA597
OD-323
diode marking yellow T
smd diode UM 09
100 mhz diode
smd diode UM 07
smd rf transistor marking
BA597
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pml 003 am
Abstract: ic pml 003 am pml 009 S1 DIODE cih smd pml 603 am smd diode code B2 diode bzw 06 26 G003 G008
Text: iC-NZ LASERDIODEN-PULSREGLER Ausgabe B2, Seite 1/20 EIGENSCHAFTEN ANWENDUNGEN ♦ Spitzenwertgeregelter Dreikanal-Laserschalter für CW- und Pulsbetrieb bis 155 MHz ♦ Spike-freies Schalten des Laserstroms bis ca. 100 mA pro Kanal in Summe max. 320 mA aus 3.5 bis 5.5 V
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QFN28
QFN28
pml 003 am
ic pml 003 am
pml 009
S1 DIODE
cih smd
pml 603 am
smd diode code B2
diode bzw 06 26
G003
G008
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SMD ZENER DIODE u5
Abstract: SMD DIODE u4v zener 7.5 B 39 SMD SMD ZENER DIODE u6 SMD zener diode 7.5 b CZRU2 smd zener 7.5 B smd Uj smd diode Uj smd diode UF
Text: SMD Zener Diode SMD Diodes Specialist CZRU2V4B Thru CZRU39VB Voltage 2.4 to 39 Volts Power 150 mWatts 0603 1608 Features 0.071(1.80) 0.063(1.60) 150mW Power Dissipation. High Voltages from 2.4 ~ 39 V. 0.039(1.00) 0.031(0.80) Designed for mounting on small surface.
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CZRU39VB
150mW
MIL-STD-750
U/0603
QW-A2004
SMD ZENER DIODE u5
SMD DIODE u4v
zener 7.5 B 39 SMD
SMD ZENER DIODE u6
SMD zener diode 7.5 b
CZRU2
smd zener 7.5 B
smd Uj
smd diode Uj
smd diode UF
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SMD DIODE u4v
Abstract: SMD ZENER DIODE u6 SMD diode U5 SMD ZENER DIODE u5 CZRU2 IR diodes 0B ZENER 200 mW smd SMD zener diode 7.5 b
Text: SMD Zener Diode SMD Diodes Specialist CZRU2V4B Thru CZRU39VB RoHS Device Voltage 2.4 to 39 Volts Power 150 mWatts Features 0603(1608) 0.071(1.80) 0.063(1.60) 150mW Power Dissipation. High Voltages from 2.4 ~ 39 V. Designed for mounting on small surface.
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CZRU39VB
150mW
MIL-STD-750
U/0603
QW-A2004
SMD DIODE u4v
SMD ZENER DIODE u6
SMD diode U5
SMD ZENER DIODE u5
CZRU2
IR diodes 0B
ZENER 200 mW smd
SMD zener diode 7.5 b
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marking tj
Abstract: 1SV288 marking hz sod323
Text: Diodes SMD Type Silicon Epitaxial Planar Diode 1SV288 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C2V/C25V = 16 Typ. Low Series Resistance:rs = 0.92 +0.1 2.6-0.1 1.0max (Typ.) 0.475 Excellent C-V Characteristics,and Small Tracking Error.
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1SV288
OD-323
C2V/C25V
marking tj
1SV288
marking hz sod323
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smd diode UJ 64 A
Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
Text: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 [email protected], www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.
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RLU4116E,
RLT390-50CMG,
RLT395-50CMG,
RLT400-50CMG,
TH06-1W,
ATU61938489,
AT1212
AT3112
smd diode UJ 64 A
SLD3237VFR
20/SPL1550-10-9-PD
SLD3237VF
smd diode UM 08
smd diode UM
RLCD-M66H-750
RLT905-30G
SLD3236VF
RLT6650GLI
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diode smd ED 17
Abstract: smd diode ED diode smd ed 02 ersa rds 80 ST SMD SCR diode smd ed 25 smd diode ED 47
Text: PRODUCT DATASHEET AAT2610 7-Channel PMU for Digital Still Cameras Ge n e r a l D e scr ipt ion Fe a t u r e s The AAT2610 is a highly int egrat ed power m anagem ent solut ion specifically suit ed for Digit al St ill Cam era DSC syst em s, feat uring seven DC- DC swit ching regulat ors for
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AAT2610
AAT2610
diode smd ED 17
smd diode ED
diode smd ed 02
ersa rds 80
ST SMD SCR
diode smd ed 25
smd diode ED 47
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ad 0845
Abstract: 45c smd diode smd diode MS 22 SMD Diode KE
Text: aixYS DSP25 VRRM IFRMS Phase-leg Rectifier Diode 1200/1600 V 2x43 A 2x28 A FAVM r— V n sM V V RRM TO-247 SMD 1200 1600 Type DSP 25-12A DSP 25-16A ~l 4-4 -4 ! r V 1300 1700 TO -247 AD r - w H 1 DSP 25-12AS DSP 25-16AS 2 - i TO-247 SMD TO-247 AD I 3 TAB
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DSP25
O-247
5-12A
5-16A
25-12AS
25-16AS
ad 0845
45c smd diode
smd diode MS 22
SMD Diode KE
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54ACTQ16245
Abstract: B15 diode smd
Text: & Semiconductor 54ACTQ16245 16-Bit Transceiver with TRI-STATE Outputs Features • U tilizes NSC FACT Quiet Series technology ■ G uaranteed sim ultaneous sw itching noise level and dynam ic threshold perform ance ■ Bidirectional non-inverting buffers
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54ACTQ16245
16-Bit
ACTQ16245
B15 diode smd
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TRANSISTOR SMD MARKING CODE 1K
Abstract: DIODE smd marking code UM 41 2/DIODE smd marking code UM 41
Text: CENTRAL SEMICONDUCTOR SDE D • n ù T ìL B DODOSlb T i f i ■ CEN SMD Zener Diode SO D -80 Case 500m W U.S. Specification Preferred Series The Central Semiconductor CLL5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial, commercial,
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CLL5221B
OT-143
OT-223
TRANSISTOR SMD MARKING CODE 1K
DIODE smd marking code UM 41
2/DIODE smd marking code UM 41
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54ACTQ16374
Abstract: No abstract text available
Text: & S eptem ber 1998 54ACTQ16374 16-Bit D Flip-Flop with TRI-STATE Outputs General Description Features The ’AC TQ 16374 contains sixteen non-inverting D flip-flops with TRI-STATE outputs and is intended fo r bus oriented a p plications. T he device is byte controlled. A buffered clock
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54ACTQ16374
16-Bit
ACTQ16374
ACTQ16245
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Untitled
Abstract: No abstract text available
Text: Semiconductor 54ACTQ16374 16-Bit D Flip-Flop with TRI-STATE Outputs Features • Utilizes NSC FACT Q uiet Series technology The ’A C TQ 16245 utilizes NSC Q u iet Series technology to guarantee q uiet output sw itching and im proved dynam ic threshold perform ance. FACT Q u iet Series® features GTO®
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54ACTQ16374
54ACTQ16374
16-Bit
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TRANSISTOR SMD MARKING CODE w6
Abstract: SMD TRANSISTOR MARKING 5H
Text: CENTRAL SEPIICONDUCTOR naoasm 5 DE D 01 5 • SMD Zener Diode SOT-23 Case 350mW cen T - W - o ° \ U.S. Specification Preferred Series The Central Semiconductor CMPZ5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial,
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OT-23
350mW
CMPZ5221B
OT-143
OT-223
TRANSISTOR SMD MARKING CODE w6
SMD TRANSISTOR MARKING 5H
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54ACTQ16244
Abstract: ACTQ244
Text: & S eptem ber 1998 54ACTQ16244 16-Bit Buffer/Line Driver with TRI-STATE« Outputs Features • U tilizes NSC FACT Quiet Series technology ■ G uaranteed sim ultaneous sw itching noise level and dynam ic threshold perform ance ■ Separate control logic for each byte and nibble
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54ACTQ16244
16-Bit
ACTQ16244
ACTQ244
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54ACTQ16240
Abstract: WA48A
Text: & S eptem ber 1998 Features • U tilizes NSC FACT Quiet Series technology ■ G uaranteed sim ultaneous sw itching noise level and dynam ic threshold perform ance ■ Separate control logic for each byte ■ 16-bit version of the ’AC TQ 240 ■ Outputs source/sink 24 m A
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54ACTQ16240
16-Bit
ACTQ16240
WA48A
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TRANSISTOR SMD MARKING CODE XI
Abstract: smd code marking LTRA TRANSISTOR SMD MARKING CODE s01 MARKING SMD PNP TRANSISTOR BV 1600H 6 pin TRANSISTOR SMD CODE XI SMD 6 PIN code marking SOM electrolytic capacitor smd code marking regulator smd marking smd code capacitor
Text: PRELIMINARY Semiconductor D ecem ber 1999 LP2967 Dual Micropower 150 mA Low-Dropout Regulator in micro SMD Package General Description Features The LP2967 is a 150 mA, dual fixed-output voltage regulator designed to provide ultra low -dropout and low noise in bat
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LP2967
TRANSISTOR SMD MARKING CODE XI
smd code marking LTRA
TRANSISTOR SMD MARKING CODE s01
MARKING SMD PNP TRANSISTOR BV
1600H
6 pin TRANSISTOR SMD CODE XI
SMD 6 PIN code marking SOM
electrolytic capacitor smd code marking
regulator smd marking
smd code capacitor
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smd transistor 1yc
Abstract: smd tr 1yc smd marking ACH marking code yc SMD Transistor 8302401E marking code EA SMD Transistor 8302401EA A13j 6n140a
Text: Wißt mLfïM Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers Technical Data HEWLETT PACKARD 6N140A* HCPL-675X 83024 HCPL-570X HCPL-177K 5962-89810 HCPL-573X HCPL-673X 5962-89785 5962-98002 *See m atrix fo r available extensions. Features • D ual M arked w ith D ev ice
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6N140A*
HCPL-675X
HCPL-570X
HCPL-177K
HCPL-573X
HCPL-673X
IL-PRF-38534
L-38534,
5964-2063E
5966-2799E
smd transistor 1yc
smd tr 1yc
smd marking ACH
marking code yc SMD Transistor
8302401E
marking code EA SMD Transistor
8302401EA
A13j
6n140a
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Untitled
Abstract: No abstract text available
Text: Semiconductor 54ACTQ16245 16-Bit Transceiver with TRI-STATE Outputs Features • Utilizes NSC FACT Q uiet Series technology The ’A C TQ 16245 utilizes NSC Q u iet Series technology to guarantee q uiet output sw itching and im proved dynam ic threshold perform ance. FACT Q u iet Series® features GTO®
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54ACTQ16245
54ACTQ16245
16-Bit
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Untitled
Abstract: No abstract text available
Text: Semiconductor 54ACTQ16646 16-Bit Transceiver/Register with TRI-STATE Outputs Features • Utilizes NSC FACT Q uiet Series technology ■ G uaranteed sim ultaneous sw itching noise level and dynam ic threshold perform ance ■ Independent registers fo r A and B buses
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54ACTQ16646
54ACTQ16646
16-Bit
thresho0-272-9959
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Untitled
Abstract: No abstract text available
Text: BSP 320S Infineon te c h n o lo g ¡« s SIPMOS Small-Signal-Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 60 V f f DSion 0.12 Í2
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BSP320S
OT-223
Q67000-S4001
S35bG5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
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