Untitled
Abstract: No abstract text available
Text: SMD High Speed Saturated Switching Transistors toff @ IC Part No. MMBT3640 20070515 Polarity PNP VCEO ton Min. Max. Max. IC V (ns) (ns) (mA) 12 25 35 50 hFE @ IC Min. 30 SMD Bipolar Transistors VCE(sat) @ IC & IB IC Max IC (mA) (V) (mA) 10 0.2 10 IB fT Min.
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MMBT3640
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KTHC5513
Abstract: No abstract text available
Text: IC IC SMD Type Power MOSFET KTHC5513 Features Complementary N-Channel and P-Channel MOSFET Leadless SMD Package Featuring Complementary Pair Low RDS on in a ChipFET Package for High Efficiency Performance Low Profile ( 1.10 mm) Allows Placement in Extremely Thin
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KTHC5513
KTHC5513
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P Channel Low Gate Charge
Abstract: KTHD3100C
Text: IC IC SMD Type Power MOSFET KTHD3100C Features Complementary N-Channel and P-Channel MOSFET Leadless SMD Package Provides Great Thermal Characteristics Trench P-Channel for Low On Resistance Low Gate Charge N-Channel for Test Switching Absolute Maximum Ratings Ta = 25
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KTHD3100C
P Channel Low Gate Charge
KTHD3100C
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Untitled
Abstract: No abstract text available
Text: SMD Power Transistors Part No. Polarity IC VCEO PC A (V) (W) hFE @ VCE & IC Min. VCE IC (V) VCE(sat) @ IC & IB IC IB (A) Max. (V) (A) (A) fT @ VCE & IC Typ. VCE (MHz) (V) Pins Package (A) 123 Reel IC MJD44H11 NPN 8.0 80 20 60 1 2.00 1.00 8.0 0.4 50 10.0
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MJD44H11
MJD45H11
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Infrared led 850 smd
Abstract: SMD WH Infrared led 940 smd BL-LS1311IR 850 nm Infrared Emitting Diode smd GaAs 850 nm Infrared Emitting Diode high power infrared led Infrared Emitting Diode infrared led sr smd diode
Text: SMD INFRARED EMITTING DIODES BL-LS1311IR Features: 3.5mmx2.8mm SMD, 1.9mm THICKNESS PLCC2 package, Infrared LED High Reliability Peak Wavelength at 940, 880, 850nm Water Clear, yellow Transparent, Blue Transparent available IC compatible /Low current capability.
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BL-LS1311IR
850nm
Infrared led 850 smd
SMD WH
Infrared led 940 smd
BL-LS1311IR
850 nm Infrared Emitting Diode smd
GaAs 850 nm Infrared Emitting Diode
high power infrared led
Infrared Emitting Diode
infrared led
sr smd diode
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SD1005 Features World standard miniature package: SOT-89. High collector to base voltage: VCBO 100V. Excellent dc current gain linearity: hFE=80TYP. VCE=2V, IC=500mA . Absolute Maximum Ratings Ta = 25 Parameter
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2SD1005
OT-89.
80TYP.
500mA)
100mA
500mA
-10mA
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Untitled
Abstract: No abstract text available
Text: SMD Type Type SMD Transistors IC Product specification 2SC5209 Features High voltage VCEO=50V. Small package for mounting. High hFE = 600 to 1800. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Emitter-base voltage
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2SC5209
50age
100mA
500mA
-10mA
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31224
Abstract: ISO14001 FS-555 epson CRYSTAL SMD
Text: SAW device SAW RESONATOR FS-555 Reflow solderable SMD ceramic package. Capable of covering a wide frequency range, from 200 MHz to 500 MHz. 1.5mm thickness is equal to SMD-type IC. Perfect for small wireless equipment. Actual size Specifications characteristics
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FS-555
25ppm,
50ppm,
100ppm
31224
ISO14001
FS-555
epson CRYSTAL SMD
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FR4 substrate height and thickness
Abstract: FR4 0.8mm thickness FR4 substrate height and thickness 1.2 FR4 height thickness substrate ltcc chip distance ring ltcc fr4 substrate
Text: NETWORKS Hybrid IC MULTI CHIP MODULE • SYSTEM iN PACKAGE MCM CONSTRUCTION SMD SMD Bonding Wire Bonding Wire Solder BallBall Solder Bare Chip Bare Chip Substrate Substrate Several semiconductors in one package offers downsized system with high performance and standardization
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D-25578
FR4 substrate height and thickness
FR4 0.8mm thickness
FR4 substrate height and thickness 1.2
FR4 height thickness substrate
ltcc chip
distance ring
ltcc
fr4 substrate
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smd marking wc
Abstract: No abstract text available
Text: SMD Type Type SMD Transistors IC Product specification 2SC5214 Features High fT fT=100MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1.5A. Small package for mounting. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage
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2SC5214
100MHz
500mA
-10mA
500mA
smd marking wc
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transistor SMD DK
Abstract: dm SMD MARKING sot-89 smd transistor marking DK marking dk sot-89 TRANSISTOR SMD PNP 1A smd MARKING dk dk SOT89 DM sot-89 TRANSISTOR MARKING DM 2SB798
Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB798 Features World standard miniature package:SOT-89 Low collector saturation voltage:VCE sat <-0.4V(IC=-1.0A,IB=-100mA) Excellent DC Current Gain Linearity:hFE=100TYP.(VCE=-10.V,IC=-1.0A) Absolute Maximum Ratings Ta = 25
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2SB798
OT-89
-100mA)
100TYP.
transistor SMD DK
dm SMD MARKING sot-89
smd transistor marking DK
marking dk sot-89
TRANSISTOR SMD PNP 1A
smd MARKING dk
dk SOT89
DM sot-89
TRANSISTOR MARKING DM
2SB798
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Untitled
Abstract: No abstract text available
Text: IC IC SMD Type HEXFET Power MOSFET KRF7603 Features Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile 1.1mm Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating
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KRF7603
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Untitled
Abstract: No abstract text available
Text: IC IC SMD Type HEXFET Power MOSFET KRF7503 Features Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile 1.1mm Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol
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KRF7503
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KRF7506
Abstract: No abstract text available
Text: IC IC SMD Type HEXFET Power MOSFET KRF7506 Features Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile 1.1mm Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol
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KRF7506
-100A/
KRF7506
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fm transmitter
Abstract: FM varicap varicap diodes Varicap fm transmitter ic HVC376B 376B HVD376B quality FM TRANSMITTER "FM transmitter
Text: Varicap Diodes for FM Transmitter Feb 2007 Renesas Technology provides varicap diodes best match for FM transmitter, HVC376B UFP and smaller one of HVD376B (SFP). IC External Circuit Features of HVC376B, HVD376B 1. Small SMD Package FM Transmitter IC Phase
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HVC376B
HVD376B
HVC376B,
HVD376B
REJ01G0010-0100
fm transmitter
FM varicap
varicap diodes
Varicap
fm transmitter ic
HVC376B
376B
quality FM TRANSMITTER
"FM transmitter
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8a smd
Abstract: 47 8A KRF7601
Text: IC IC SMD Type HEXFET Power MOSFET KRF7601 Features Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile 1.1mm Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating
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KRF7601
8a smd
47 8A
KRF7601
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SMD SINGLE GATE
Abstract: KRF7606
Text: IC IC SMD Type HEXFET Power MOSFET KRF7606 Features Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile 1.1mm Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating
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KRF7606
-100A/
SMD SINGLE GATE
KRF7606
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DIODE SMD 10A
Abstract: 56 pF CH PCH190
Text: IC IC SMD Type Switching KP8M10 Features Low on-resistance. Built-in G-S Protection Diode. Small and Surface Mount Package. Power switching, DC / DC converter. Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit Drain-source voltage
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KP8M10
DIODE SMD 10A
56 pF CH
PCH190
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AN0005
Abstract: CHA2093 CHA2093RBF
Text: CHA2093RBF 20-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a two-stage wide band monolithic low noise amplifier. • Broad band performance: 20-30GHz
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CHA2093RBF
20-30GHz
20-30GHz
DSCHA2093RBF1257
14-Sept-01-
AN0005
CHA2093
CHA2093RBF
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smd diode br
Abstract: diode 66a KRF7501
Text: IC IC SMD Type HEXFET Power MOSFET KRF7501 Features Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile 1.1mm Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol
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KRF7501
smd diode br
diode 66a
KRF7501
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KRF7607
Abstract: No abstract text available
Text: IC IC SMD Type HEXFET Power MOSFET KRF7607 Features Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile 1.1mm Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating
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KRF7607
KRF7607
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KRF7509
Abstract: No abstract text available
Text: IC IC SMD Type HEXFET Power MOSFET KRF7509 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter
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KRF7509
-100A/
KRF7509
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smd diode 1301
Abstract: 1301 smd DIODE SMD 10A smd diode 1303 1202 smd diode smd symbols diode 1304 DIODE SMD 1303 smd diode 1304 DIODE SMD 55
Text: SEMTECH CORP S1E D ÛIBTIBT 00GSS3Ô 1 7^-<2 3 -O 7 SEMTECH CORPORATION MICROELECTRONICS DIVISION SMD SMD SMD SMD CENTER-TAP, RECTIFIER IN HERMETIC ISOLATED TO 220 PACKAGE Q U IC K REFERENCE DATA Designed for use in switching power supplies, inverters and as free-wheeling diodes.
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00GSS3Ã
O-220
SM883
18ion
smd diode 1301
1301 smd
DIODE SMD 10A
smd diode 1303
1202 smd diode
smd symbols
diode 1304
DIODE SMD 1303
smd diode 1304
DIODE SMD 55
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smd T4C
Abstract: mt4c1004
Text: DRAM 4 MEG X 1 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-90622 • MIL-STD-883 18-Pin DIP FEATURES OPTIONS Packages C eram ic DIP (300 m il) C eram ic DIP (400 mil) C eram ic LCC C eram ic SOJ C eram ic ZIP
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MIL-STD-883
18-Pin
20-Pin
024-cycle
MIL-STD-883
MT4C-004J
smd T4C
mt4c1004
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