TRANSISTOR SMD MARKING CODE QR
Abstract: MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11
Text: DF N2 020 -6 PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor 15 May 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium
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PMC85XP
DFN2020-6
OT1118)
TRANSISTOR SMD MARKING CODE QR
MOSFET TRANSISTOR SMD MARKING CODE NA
MOSFET TRANSISTOR SMD MARKING CODE 11
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SMD Transistor 070 R
Abstract: No abstract text available
Text: STZT2907A SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking STZT2907A N29A SILICON EPITAXIAL PLANAR PNP TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE NPN COMPLEMENTARY TYPE IS STZT2222A
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STZT2907A
OT-223
STZT2222A
OT-223
SMD Transistor 070 R
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STZT2222A
Abstract: STZT2907A 08AP
Text: STZT2907A SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking STZT2907A N29A SILICON EPITAXIAL PLANAR PNP TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE NPN COMPLEMENTARY TYPE IS STZT2222A
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STZT2907A
OT-223
STZT2222A
OT-223
STZT2222A
STZT2907A
08AP
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NXP SMD TRANSISTOR MARKING CODE s1
Abstract: No abstract text available
Text: DF N2 020 -6 PMDPB760EN 100 V, dual N-channel Trench MOSFET 29 May 2013 Objective data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB760EN
DFN2020-6
OT1118)
NXP SMD TRANSISTOR MARKING CODE s1
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Untitled
Abstract: No abstract text available
Text: DF N2 020 D-3 PBSS5330PAS 30 V, 3 A PNP low VCEsat BISS transistor 11 September 2014 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic
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PBSS5330PAS
DFN2020D-3
OT1061D)
PBSS4330PAS
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Untitled
Abstract: No abstract text available
Text: DF N2 020 D-3 PBSS4330PAS 30 V, 3 A NPN low VCEsat BISS transistor 11 September 2014 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic
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PBSS4330PAS
DFN2020D-3
OT1061D)
PBSS5330PAS
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MOSFET TRANSISTOR SMD MARKING CODE 11
Abstract: P-CHANNEL MOSFET
Text: 020 -6 PMC85XP DF N2 30 V P-channel MOSFET with pre-biased NPN transistor Rev. 1 — 24 May 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium
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PMC85XP
DFN2020-6
OT1118)
MOSFET TRANSISTOR SMD MARKING CODE 11
P-CHANNEL MOSFET
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DFN2020-6
Abstract: No abstract text available
Text: 020 -6 PMDPB55XP DF N2 20 V, dual P-channel Trench MOSFET Rev. 3 — 4 June 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB55XP
DFN2020-6
OT1118)
DFN2020-6
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NXP SMD TRANSISTOR MARKING CODE s1
Abstract: No abstract text available
Text: 020 -6 PMDPB56XN DF N2 30 V, dual N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB56XN
DFN2020-6
OT1118)
NXP SMD TRANSISTOR MARKING CODE s1
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marking code 1L
Abstract: NXP MARKING 1l
Text: 020 -6 PMDPB42UN DF N2 20 V, dual N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB42UN
DFN2020-6
OT1118)
marking code 1L
NXP MARKING 1l
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N22A
Abstract: STZT2222A STZT2907A
Text: STZT2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking STZT2222A N22A SILICON EPITAXIAL PLANAR NPN TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS STZT2907A
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STZT2222A
OT-223
STZT2907A
OT-223
N22A
STZT2222A
STZT2907A
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N22A
Abstract: STZT2222A STZT2907A smd transistor marking 15
Text: STZT2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking STZT2222A N22A SILICON EPITAXIAL PLANAR NPN TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS STZT2907A
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STZT2222A
OT-223
STZT2907A
OT-223
N22A
STZT2222A
STZT2907A
smd transistor marking 15
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Untitled
Abstract: No abstract text available
Text: DF N2 020 -6 PBSS5160PAP 60 V, 1 A PNP/PNP low VCEsat BISS transistor 23 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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PBSS5160PAP
DFN2020-6
OT1118)
PBSS4160PANP.
PBSS4160PAN.
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: DF N2 020 -6 PBSS5230PAP 30 V, 2 A PNP/PNP low VCEsat BISS transistor 11 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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PBSS5230PAP
DFN2020-6
OT1118)
PBSS4230PANP.
PBSS4230PAN.
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: DF N2 020 -6 PBSS4160PAN 60 V, 1 A NPN/NPN low VCEsat BISS transistor 14 January 2013 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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PBSS4160PAN
DFN2020-6
OT1118)
PBSS4160PANP.
PBSS5160PAP.
AEC-Q101
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SOT-89 marking N2
Abstract: smd transistor n2 smd transistor marking 1A SOT-89 N2 FCX491A marking 1A smd 1A N2 transistor smd SMD TRANSISTOR MARKING N2
Text: Transistors SMD Type Medium Power Transistor FCX491A SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 +0.1 2.60-0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 1 Amp continuous current. +0.1 4.00-0.1
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FCX491A
OT-89
500mA,
100mA
100MHz
SOT-89 marking N2
smd transistor n2
smd transistor marking 1A
SOT-89 N2
FCX491A
marking 1A
smd 1A
N2 transistor smd
SMD TRANSISTOR MARKING N2
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N3 smd transistor
Abstract: smd transistor marking n3 smd transistor n2 smd n4 2SC1653 TRANSISTOR N3 SMD transistor 23 N3 smd transistor sot 23 N2 transistor smd transistor SMD N3
Text: Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SC1653 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 High voltage VCEO : 130V +0.1 1.3-0.1 +0.1 2.4-0.1 High DC current gain.hFE=130 typ. VCE=3.0V,IC=15mA 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1
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2SC1653
OT-23
N3 smd transistor
smd transistor marking n3
smd transistor n2
smd n4
2SC1653
TRANSISTOR N3
SMD transistor 23
N3 smd transistor sot 23
N2 transistor smd
transistor SMD N3
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NXP SMD TRANSISTOR MARKING CODE s1
Abstract: No abstract text available
Text: 020 -6 PMDPB58UPE DF N2 20 V dual P-channel Trench MOSFET Rev. 1 — 19 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic
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PMDPB58UPE
DFN2020-6
OT1118)
NXP SMD TRANSISTOR MARKING CODE s1
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Untitled
Abstract: No abstract text available
Text: 020 -6 PMDPB70XPE DF N2 20 V dual P-channel Trench MOSFET Rev. 1 — 20 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic
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PMDPB70XPE
DFN2020-6
OT1118)
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Untitled
Abstract: No abstract text available
Text: 020 -6 PMDPB85UPE DF N2 20 V dual P-channel Trench MOSFET Rev. 1 — 20 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic
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PMDPB85UPE
DFN2020-6
OT1118)
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Untitled
Abstract: No abstract text available
Text: DF N2 020 -6 PBSS4160PANP 60 V, 1 A NPN/PNP low VCEsat BISS transistor 14 January 2013 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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PBSS4160PANP
DFN2020-6
OT1118)
PBSS4160PAN.
PBSS5160PAP.
AEC-Q101
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2n3904 smd pin configuration
Abstract: 560 K. 561 k SMD 653K HCPL-5501 hp 1002 HP 2531 4N55 6N135 6N136 HCPL-2530
Text: H Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-655X 5962-90854 HCPL-550X *See matrix for available extensions. Features • Dual Marked with Device Part Number and DESC
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HCPL-553X
HCPL-653X
HCPL-655X
HCPL-550X
MIL-PRF-38534
QML-38534,
6N135,
6N136,
HCPL-2530/
HCPL-5530)
2n3904 smd pin configuration
560 K. 561 k SMD
653K
HCPL-5501
hp 1002
HP 2531
4N55
6N135
6N136
HCPL-2530
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TRANSISTOR SMD MARKING CODE 1 KW
Abstract: 2n3904 smd pin configuration transistor SMD 2n3904 TRANSISTOR SMD MARKING CODE marking code ya SMD Transistor smd ya transistor marking code ff p SMD Transistor smd tr yc smd optocoupler marking device 1 6 pin TRANSISTOR SMD CODE PA
Text: Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55*, 5962-87679, HCPL-553X, HCPL-653X, HCPL-257K, HCPL-655X, 5962-90854, HCPL-550X *See matrix for available extensions. Data Sheet Description Features These units are single, dual and quad channel, hermetically
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HCPL-553X,
HCPL-653X,
HCPL-257K,
HCPL-655X,
HCPL-550X
MIL-PRF-38534
QML-38534
MIL-PRF-38534.
5989-1659EN
TRANSISTOR SMD MARKING CODE 1 KW
2n3904 smd pin configuration
transistor SMD 2n3904
TRANSISTOR SMD MARKING CODE
marking code ya SMD Transistor
smd ya transistor
marking code ff p SMD Transistor
smd tr yc
smd optocoupler marking device 1
6 pin TRANSISTOR SMD CODE PA
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Untitled
Abstract: No abstract text available
Text: 4N55*, 5962-87679, HCPL-553X, HCPL-653X, HCPL-257K, HCPL-655X, 5962-90854, HCPL-550X Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications Data Sheet *See matrix for available extensions. Description Features These units are single, dual and quad channel, hermetically
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HCPL-553X,
HCPL-653X,
HCPL-257K,
HCPL-655X,
HCPL-550X
MIL-PRF-38534
QML-38534
MIL-PRF-38534.
5989-1659EN
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