Untitled
Abstract: No abstract text available
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 D D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
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Original
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SN54ABT861,
SN74ABT861
10-BIT
SCBS199C
MIL-STD-883,
JESD-17
32-mA
64-mA
SN54ABT861
SN74ABT861
|
PDF
|
SN54ABT861
Abstract: SN74ABT861
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 D D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
|
Original
|
SN54ABT861,
SN74ABT861
10-BIT
SCBS199C
MIL-STD-883,
JESD-17
32-mA
64-mA
SN54ABT861
SN54ABT861
SN74ABT861
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 D D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
|
Original
|
SN54ABT861,
SN74ABT861
10-BIT
SCBS199C
MIL-STD-883,
JESD-17
32-mA
64-mA
SN54ABT861
SN74ABT861
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 D D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
|
Original
|
SN54ABT861,
SN74ABT861
10-BIT
SCBS199C
MIL-STD-883,
JESD-17
32-mA
64-mA
SN54ABT861
SN74ABT861
|
PDF
|
SN54ABT861
Abstract: SN74ABT861
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199A – FEBRUARY 1991 – REVISED OCTOBER 1995 D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds
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Original
|
SN54ABT861,
SN74ABT861
10-BIT
SCBS199A
MIL-STD-883C,
JESD-17
32-mA
64-mA
SN54ABT861
SN54ABT861
SN74ABT861
|
PDF
|
SN54ABT861
Abstract: SN74ABT861 SN74ABT861DW
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 D D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
|
Original
|
SN54ABT861,
SN74ABT861
10-BIT
SCBS199C
MIL-STD-883,
JESD-17
32-mA
64-mA
SN54ABT861
SN54ABT861
SN74ABT861
SN74ABT861DW
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 D D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
|
Original
|
SN54ABT861,
SN74ABT861
10-BIT
SCBS199C
MIL-STD-883,
JESD-17
32-mA
64-mA
SN54ABT861
SN74ABT861
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 D D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
|
Original
|
SN54ABT861,
SN74ABT861
10-BIT
SCBS199C
MIL-STD-883,
JESD-17
32-mA
64-mA
SN54ABT861
SN74ABT861
|
PDF
|
SN54ABT861
Abstract: SN74ABT861 SN74ABT861DW
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 D D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
|
Original
|
SN54ABT861,
SN74ABT861
10-BIT
SCBS199C
MIL-STD-883,
JESD-17
32-mA
64-mA
SN54ABT861
SN54ABT861
SN74ABT861
SN74ABT861DW
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 D D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
|
Original
|
SN54ABT861,
SN74ABT861
10-BIT
SCBS199C
MIL-STD-883,
JESD-17
32-mA
64-mA
SN54ABT861
SN74ABT861
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 D D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
|
Original
|
SN54ABT861,
SN74ABT861
10-BIT
SCBS199C
MIL-STD-883,
JESD-17
32-mA
64-mA
SN54ABT861
SN74ABT861
|
PDF
|
SN54ABT861
Abstract: SN74ABT861
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 D D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
|
Original
|
SN54ABT861,
SN74ABT861
10-BIT
SCBS199C
MIL-STD-883,
JESD-17
32-mA
64-mA
SN54ABT861
SN54ABT861
SN74ABT861
|
PDF
|
SN54ABT861
Abstract: SN74ABT861 SN74ABT861DW
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 D D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
|
Original
|
SN54ABT861,
SN74ABT861
10-BIT
SCBS199C
MIL-STD-883,
JESD-17
32-mA
64-mA
SN54ABT861
SN54ABT861
SN74ABT861
SN74ABT861DW
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 D D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
|
Original
|
SN54ABT861,
SN74ABT861
10-BIT
SCBS199C
MIL-STD-883,
JESD-17
32-mA
64-mA
SN54ABT861
SN74ABT861
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 D D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
|
Original
|
SN54ABT861,
SN74ABT861
10-BIT
SCBS199C
MIL-STD-883,
JESD-17
32-mA
64-mA
SN54ABT861
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 D D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
|
Original
|
SN54ABT861,
SN74ABT861
10-BIT
SCBS199C
MIL-STD-883,
JESD-17
32-mA
64-mA
SN54ABT861
|
PDF
|