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    Abstract: No abstract text available
    Text: SNN3515D N-Channel Enhancement Mode MOSFET Features • VDSS = 150V, ID = 35A  Low drain-source On resistance: RDS on = 35mΩ (Typ.) @ VGS = 10V, ID = 10A RDS(on) = 40mΩ (Typ.) @ VGS = 6V, ID = 8A  Reliable and Rugged  Lead Free and Green devices available (RoHS Compliant)


    Original     		PDF SNN3515D O-252 SNN3515 28-MAY-13 KSD-T6O043-000