SO 237 TRANSISTOR Search Results

SO 237 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

SO 237 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
D234 Abstract: D233 D-234 BD233 CDIL BD238 BD234 BD235 BD236 BD237 BD238 Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer BD233, BD235, BD237 BD234, BD236, BD238 TO-126 SOT-32 Plastic Package BD233, 235, 237 BD234, 236, 238 NPN PLASTIC POWER TRANSISTORS	Original	BD233, BD235, BD237 BD234, BD236, BD238 O-126 OT-32) D234 D233 D-234 BD233 CDIL BD238 BD234 BD235 BD236 BD237 BD238	PDF
TO126 Abstract: CDIL BD238 BD233 BD234 BD238 BD235 BD236 BD237 bd 238 P BD238 continental Text: ,6,62 /LF 46&/ Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS BD 233, 235, 237 BD 234, 236, 238 TO126 Plastic Package EC B Medium Power Liner and Switching Applications	Original	BD233 BD235 BD237 BD234 BD236 BD238 C-120 Rev170701 TO126 CDIL BD238 BD238 BD237 bd 238 P BD238 continental	PDF
BD233 Abstract: BD237-10 BD235 BD237 Text: TO-126 Plastic-Encapsulate Transistors^ BD233/235/237 TRANSISTOR NPN FEATURES - . . . A . Power dissipation Pcm: T O -1 2 6 1.25 W (Tamb=25°C) Æ'J : ^ “lector current 2A Ic m : 1 .E M IT T E R m ^ ^ so e sss^ •base voltage V(BR)cBo: BD233 : 4 5 V 2 .COLLECTOR	OCR Scan	O-126 BD233/235/237 BD233 BD235 BD237: BD233 100uA BD237 BD237-10 BD235 BD237	PDF
tl 134 Abstract: thomson-csf rf power transistor SD1132-4 Text: S G S -TH O M SO N D 4C D I 715^237 □□□□□31 7 l~ D Y ~ SOLID STATE MICROWAVE ! S D 1132-4 THOMSON-CSF COMPONENTS CORPORATION !•Montgomeryvi lie, PA 18936 » 215J 362-85Q01 TWX 510-661-7299 \ _ ._ ^ ^ L ■ 470 MHz, 7.5 V POWER TRANSISTOR	OCR Scan	362-85Q01 SD1132-4 tl 134 thomson-csf rf power transistor	PDF
tda7374 Abstract: TDA 7374 V ap 7302 b transistor ap 7302 b Text: M2E 7=12^237 » Q03bb42 s SCS-THOMSON 7 BISÛTH G S - TH OM SO N TDA7374 ¡y ~ 7 # -0 S -0 \ DUAL BRIDGE AUDIO AMPLIFIER FOR CAR RADIO ' ; ADVANCE DATA • MINIMUM EXTERNAL COMPONENT COUNT ■ NO BOOTSTRAP CAPACITORS a NO BOUCHEROT CELLS ■ CLIP DETECTOR OUTPUT	OCR Scan	Q03bb42 TDA7374 TDA7374 TDA7302 TDA7302 TDA 7374 V ap 7302 b transistor ap 7302 b	PDF
Untitled Abstract: No abstract text available Text: 3GE D • 7^237 0031103 T ■ “T'-'SS'il rrr scs-th o m so n _ 7 # o ^ H tH M M Q S _ 2 N 3 7 2 5 S 6 S-TH0MS0N HIGH VOLTAGE, HIGH CURRENT SWITCH DESCRIPTION The 2N3725 is a silicon planar epitaxial transistor in TO-39 metal case It is a high-voltage, high cur	OCR Scan	2N3725 2N3725 DG311Ã S-4618 100KQ	PDF
118-136 mhz Abstract: sd1222-6 transistor rf vhf Text: S G S'•TH O M SO N QSC I 7=1^237 D G Q G 17E 3 SOLID STATE MICROWAVE SD1222-6 JHOMSON-CSF COMPONENTS CORPORATION Montgomeryville, PA 18936« 215 362-8500 • TWX 510-661-7299 15 W, 28 V VHF POWER TRANSISTOR DESCRIPTION SSM device type SD 1222-6 is an epitaxial silicon NPN-planar transistor	OCR Scan	SD1222-6 aaGG173 10/if 118-136 mhz transistor rf vhf	PDF
BC 2388 Abstract: BC739 BC236 BC237B 239b BC237A BC231 bc2376 06008v BC238 Text: ^ BC237 BC238 BC239 OßtCf MAXIMUM RATINGS Rl»r»V Symbol Collector-Emitter Voltage BC BC BC 237 231 239 Unit v e to 45 25 25 Vdc Collector Emitter Voltage VCfS 50 30 30 Vdc £»ni»t<r-8ie Voltage v i9 0 6 0 SO 5.0 Vdc Collector Current - Continuous 100	OCR Scan	BC237 BC238 BC239 O-226AA) BC237B/238B/239B BC737C/238C/239C BC237A/238A BC737C/23EC/239C BC237A BC 2388 BC739 BC236 BC237B 239b BC231 bc2376 06008v	PDF
BC478 Abstract: BC479 BC477 BC478-BC479 bc477 BC478 BC479 Text: - 3DE » • 7^5^237 □ D 3 Ü CI 1 3 H m I ^ T ’^ f - r o i _1 SG S -TH O M SO N MMlI [I[Li ïï[RMO©S G S BC477 B C478-BC479 S-THOMSON LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS D E S C R IP T IO N The BC477, BC478 and BC479 are silicon planar	OCR Scan	BC477 BC478-BC479 BC477, BC478 BC479 BC478-BC479 bc477 BC478 BC479	PDF
sef730 Abstract: 8a22a Text: S G S-THOMSON Û7E D g 7^2^237 . 0 7 » 3<%- 1 J 7 3 C .1 7 5 4 2 a u HIGH SP EED SW IT C H IN G A P P L IC A T IO N S A B SO L U T E M A X IM U M R A T IN G S V qs ^DGR V qs •d m ! * P,o, ^stg T\| Drain-source voltage VGS = 0) Drain-gate voltage (RGS = 2 0 K O )	OCR Scan	SEF730 SEF731 SEF732 SEF733 300/is, C-267 8a22a	PDF
TFK BC Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330 Text: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:	OCR Scan	BC108 BC109 TFK BC TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330	PDF
Untitled Abstract: No abstract text available Text: Ï. 5 SGS-THOMSON A M 8 2 7 3 1 -0 0 6 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EM ITTER SITE BALLASTED 5:1 VSW R CAPABILITY LOW THERMAL RESISTANCE IN PU T/O U TPU T IMPEDANCE MATCHING OVERLAY G EOM ETRY M ETAL/CERAMIC HERM ETIC PACKAGE	OCR Scan	AM82731 00b50f	PDF
Untitled Abstract: No abstract text available Text: S G S -1 H 0 M S 0 N D t g lÄ H lC T M O ig l A M 12 1 4 -2 0 0 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE	OCR Scan	AM1214-200	PDF
Untitled Abstract: No abstract text available Text: G 7 S C S - T H O M S O N A T /. HigMilLlgTOMOtgl_ AM2931-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS • REFRACTORY/GOLD METALLIZATION ■ EM ITTER SITE BALLASTED ■ 3:1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE ■ IN PU T/O U TPU T MATCHING	OCR Scan	AM2931-110 AM2931 AM2931-110 00b5D13	PDF

STH7NA80FI Abstract: STH7NA80 Text: STH7NA80 STH7NA80FI r z 7 S CS-THOMSON Ä 7# M g l 3l,ÎICT[SÎ(a ffl(gl N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STH 7NA80 STH 7NA80FI V dss R o S (on) Id 800 V 800 V < 1.9 n < 1.9 n 6.5 A 4 A TYPIC A L R d s ( o p ) = 1 . 6 8 Q ± 30V G ATE TO SO U R C E VO LTAGE RATING	OCR Scan	STH7NA80 STH7NA80FI STH7NA80 STH7NA80FI SWITCHI00 gcs99so 00b2GG6 STH7NA80/FI SC05970 DOtEDD11]	PDF
2SA10150 Abstract: SO-160 Text: CONTINENTAL DEVICE INDIA b3E D • 23033^4 DGDG1S3 b3b B K D I L - TO-92 PLASTIC PACKAGE TRANSISTORS PNP Maximum Ratings Typ« No. 2SA537 VC80 (V) Un 60 VCEO VEBO (V) (V) Un Un 50 5 Electrical Characteristics 'CBO (UA) VC8	OCR Scan	2SA537 2SA10150 SO-160	PDF
SELECTRO Abstract: No abstract text available Text: SCS-THOMSON lE C T G Ä D tg i M S C 8 0 1 86 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS • EMITTER BALLASTED . CLASS A LINEAR OPERATION . COMMON EMITTER . VSWR CAPABILITY 15:1 @ RATED CONDITIONS . ft 3.2 GHz TYPICAL . NOISE FIGURE 12.5 dB @ 2 GHz	OCR Scan	MSC80185 lfl31 MSC80186 C127305 030-J SELECTRO	PDF
welding equipment smps schematic Abstract: No abstract text available Text: rZ Ä Z S G S -1 H 0 M S 0 N 7 # M D C H O iL ie T IS iS fflD e S S T E 1 1 0 N A 2 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TY P E V dss S T E 1 10NA20 • . . . . . . . . 200 V RDS on < 0 .0 19 Id a 110 A TYPICAL FtDS(on)= 0.015 £i	OCR Scan	10NA20 STE110NA20 welding equipment smps schematic	PDF
TRANSISTOR BC 213 Abstract: TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .	OCR Scan	BCW94 CB-76 TRANSISTOR BC 213 TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor	PDF
Untitled Abstract: No abstract text available Text: SGS-THOMSON A M 1 2 1 4 -3 2 5 m RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P o u t = 325 W MIN. WITH 6.4 dB GAIN	OCR Scan	AM1214-325	PDF
2N5643 Abstract: 605Z OB65 Text: SGS-1H0MS0N ¡UKgTMDiS SD1224 2N5643 RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS . 175 MHz . 28 VOLTS > CLASS C . COMMON EMITTER . EFFICIENCY 60% MIN • P out = 40 W MIN. WITH 7.6 dB GAIN .380 4L STUD (M135) epoxy sealed ORDER CODE BRANDING SD1224 2N5643	OCR Scan	SD1224 2N5643) 2N5643 SD1224 2N5643 605Z OB65	PDF
Untitled Abstract: No abstract text available Text: 5 S C S -T H O M S O N iH[ Î. SD4013 RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS P RE LIM IN A R Y DATA REFRACTORY/GOLD METALLIZATION INTERNAL INPUT MATCHING METAL/CERAMIC PACKAGE EMITTER BALLASTED 20:1 VSWR CAPABILITY Pout = 25 W MIN. WITH 9 dB GAIN	OCR Scan	SD4013 SD4013 G0707Ã	PDF
sgs RF NPN POWER TRANSISTOR 3 GHZ Abstract: m1416 AM1416-100 M14-16 Text: r= 7 S G S - T H O M S O N ^ 7#. M ia© g[L i@ T M []igS _ A M 1 4 1 6 -1 0 0 RF & MICROWAVE TRANSISTORS APPLICATIONS . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED i LOW THERMAL RESISTANCE • INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY	OCR Scan	AM1416-100 AM1416-100 sgs RF NPN POWER TRANSISTOR 3 GHZ m1416 M14-16	PDF
Untitled Abstract: No abstract text available Text: rz 7 ^ 7# SGS-THOMSON [«o @iiLEeiris®mei S TB 5 N A 50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB5NA50 V dss R dS od Id 500 V < 1.6 n 5 A TYPICAL R d s (o ii) = 1 .2 £1 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C	OCR Scan	STB5NA50 O-262) O-263) O-262 O-263 723SS	PDF

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SO 237 TRANSISTOR Search Results

SO 237 TRANSISTOR Result Highlights (5)

SO 237 TRANSISTOR Datasheets Context Search

D234

TO126

BD233

tl 134

tda7374

Untitled

118-136 mhz

BC 2388

BC478

sef730

TFK BC

Untitled

Untitled

Untitled

STH7NA80FI

2SA10150

SELECTRO

welding equipment smps schematic

TRANSISTOR BC 213

Untitled

2N5643

Untitled

sgs RF NPN POWER TRANSISTOR 3 GHZ

Untitled