Si4430BDY
Abstract: Si4430BDY-T1-E3
Text: New Product Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) • TrenchFET Power MOSFETS • 100 % Rg Tested RoHS COMPLIANT 24 SO-8 D S 1 8
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Si4430BDY
Si4430BDY-T1-E3
08-Apr-05
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SI4401BDY-T1-E3
Abstract: Si4401BDY 73140
Text: Si4401BDY New Product Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −40 rDS(on) (W) ID (A) 0.014 @ VGS = −10 V −10.5 0.021 @ VGS = −4.5 V −8.7 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) 40 S SO-8 S 1 8 D S
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Si4401BDY
Si4401BDY-T1--E3
S-41991--Rev.
01-Nov-04
SI4401BDY-T1-E3
73140
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TA 7312
Abstract: APM7312 J-STD-020A GS 069
Text: APM7312 Dual N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/6A , RDS ON =35mΩ(typ.) @ VGS=10V SO-8 RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS(ON)=110mΩ(typ.) @ VGS=2.5V • • • S1 1 8 D1 Super High Dense Cell Design for Extremely G1 2
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APM7312
TA 7312
APM7312
J-STD-020A
GS 069
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Si4430BDY
Abstract: Si4430BDY-T1-E3
Text: Si4430BDY Vishay Siliconix New Product N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ) • TrenchFET Power MOSFETS • 100 % Rg Tested RoHS 24 COMPLIANT SO-8 D S 1 8 D
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Si4430BDY
Si4430BDY-T1-E3
08-Apr-05
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FT1034BMH-1
Abstract: No abstract text available
Text: FT1034-1.2/FT1034-2.5 LT1034-1.2/LT1034-2.5 Micropower Dual Reference Micropower Dual Reference Description U Features • ■ ■ ■ ■ Guaranteed 20 ppm/°C Drift Guaranteed 40 ppm/°C Drift SO-8 Package 20µA to 20mA Operation (1.2V) Dynamic Impedance: 1Ω
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FT1034-1
2/FT1034-2
LT1034-1
2/LT1034-2
20ppm/
FT1034
FT385
FT1034BMH-1
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SI4430BDY-E3
Abstract: S3550 SI4430BDY-T1-E3 Si4430BDY
Text: Si4430BDY New Product Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.006 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFETS D 100% Rg Tested Qg (Typ) 24 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D
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Si4430BDY
Si4430BDY--E3
Si4430BDY-T1--E3
S-42242--Rev.
13-Dec-04
SI4430BDY-E3
S3550
SI4430BDY-T1-E3
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Si7856ADP-T1
Abstract: No abstract text available
Text: Si7856ADP Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0037 @ VGS = 10 V 25 0.0048 @ VGS = 4.5 V 23 Qg (Typ) 39 PowerPAK SO-8 RoHS* COMPLIANT • DC/DC Converters • Synchronous Rectifiers
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Si7856ADP
07-mm
Si7856ADP-T1
Si7856ADP-T1--E3
S-51566-Rev.
07-Nov-05
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Si7336ADP
Abstract: Si7336ADP-T1-E3 Si7336ADP-T1-GE3 Si7336ADP-T1
Text: Si7336ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) 0.0030 at VGS = 10 V 30 0.0040 at VGS = 4.5 V 27 VDS (V) 30 Qg (Typ.) 36 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Low-Side DC/DC Conversion - Notebook - Server
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Si7336ADP
Si7336ADP-T1-E3
11-Mar-11
Si7336ADP-T1-GE3
Si7336ADP-T1
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Untitled
Abstract: No abstract text available
Text: Si7336ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) 0.0030 at VGS = 10 V 30 0.0040 at VGS = 4.5 V 27 VDS (V) 30 Qg (Typ.) 36 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Low-Side DC/DC Conversion - Notebook - Server
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Si7336ADP
Si7336ADP-T1-E3
Si7336ADP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Si7858ADP
Abstract: Si7858ADP-T1-E3 Si7858ADP-T1-GE3 S-80440-Rev
Text: Si7858ADP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.0026 at VGS = 4.5 V 29 0.0037 at VGS = 2.5 V 23 Qg (Typ.) 54 PowerPAK SO-8 • New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile
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Si7858ADP
Si7858ADP-T1-E3
Si7858ADP-T1-GE3
08-Apr-05
S-80440-Rev
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Si7858ADP
Abstract: Si7858ADP-T1-E3 Si7858ADP-T1-GE3
Text: Si7858ADP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.0026 at VGS = 4.5 V 29 0.0037 at VGS = 2.5 V 23 Qg (Typ.) 54 PowerPAK SO-8 • New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile
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Si7858ADP
Si7858ADP-T1-E3
Si7858ADP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si7431DP Vishay Siliconix P-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) () ID (A) 0.174 at VGS = - 10 V - 3.8 0.180 at VGS = - 6 V - 3.6 Qg (Typ.) 88 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 S • Active Clamp in Intermediate
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Si7431DP
2002/95/EC
Si7431DP-T1-E3
Si7431DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si7439DP Vishay Siliconix P-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) () ID (A) 0.090 at VGS = - 10 V - 5.2 0.095 at VGS = - 6 V - 5.0 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • Halogen-free According to IEC 61249-2-21
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Si7439DP
2002/95/EC
Si743emarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si7431DP Vishay Siliconix P-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) () ID (A) 0.174 at VGS = - 10 V - 3.8 0.180 at VGS = - 6 V - 3.6 Qg (Typ.) 88 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 S • Active Clamp in Intermediate
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Si7431DP
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si7894ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0036 at VGS = 10 V 25 0.0045 at VGS = 4.5 V 23 Qg (Typ.) 58 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si7894ADP
Si7894ADP-T1-E3
Si7894ADP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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BUZ MOSFET
Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8
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615NV
BSP318S
BUZ MOSFET
mosfet BUZ 326
BUZ MOSFET 334
spd14n05
mosfet BUZ 349
mosfet buz 90a
BUZ 100 MOSFET
bup202
BUZ MOSFET 102s
BUZ MOSFET 111S
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max761 Pin-for-Pin Compatible
Abstract: 741d MAX850-853 741u AX771 AX772 741n
Text: DC-DC CONVERTERS | I_ LOW-DROPOUT LINEAR REGULATORS - ] POSITIVE | STEP-UP t MAXMI3 5 V or adj., Io = 15|iA , 320m V dropout at 500m A , 1.6W 8 -pin SO ☆ M A X 741U (step-up controller) ☆ M A X 732 (12V . flash prog.) ☆ M A X 751 (2V in to 5VoUT)
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15jiA,
120mV
MAX662
MAX662,
MAX662A
max761 Pin-for-Pin Compatible
741d
MAX850-853
741u
AX771
AX772
741n
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Untitled
Abstract: No abstract text available
Text: MX5 SERIES AUTOMOTIVE CONNECTORS 040/070 Crimp Contacts, PCB-to-Cable Applications GENERAL SPECIFICATIONS N u m b e r of C o n ta c ts Pin: 4 2 ,4 8 ,5 4 ,6 4 ,7 6 So c k e t: 12,16,22 ,26 C o n ta ct S p a c in g S ign al: 3.0mm .118“ Pow er: 3.5mm (.138")
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AM29F200
Abstract: No abstract text available
Text: FIN A L Am29F200T/Am29F200B Adva^ 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS S.O Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ ■ Compatible with JEDEC-standards ■ — P in o u t a n d so ftw a re c o m p a tib le w ith
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Am29F200T/Am29F200B
8-Bit/131
16-Bit)
44-pin
48-pin
9F200
25752fl
0033bb4
AM29F200
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Untitled
Abstract: No abstract text available
Text: TYPES TF4028A, T P4028A CM OS BCD T O -D E C IM A l DECODERS LOGIC CIRCU ITS S E P T E M B E R 5976 JO R N D U A L IN-LIN E P A C K A G E TO P VIEW Designed to be Interchangeable with RCA CD4028A Y 00 >3 V1 SI a S3 so V8 J-L LL O I 2 J 4 & 6 7 8 9 specifications
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TF4028A,
P4028A
CD4028A
TP4028A
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Untitled
Abstract: No abstract text available
Text: To: 7312594 From: RCD COMPONENTS INC 0 5 /1 2 /9 8 0 8 :1 0 •Q> 2-13-2001 3 :08pm 3 o f 12 p. RCD COMPONENTS 002 QQQ RADIAL LEAD IN DU CT O R R 0 6 0 8 SERIES ■ Low cost! ■ R a d i a l lead d e s i g n ■ V ariety o f i n s u l a t i o n types: R A 0 6 0 8 has c o n f o r m a i coat & color co d e
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RCDCS00020
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TIS84
Abstract: PFL200
Text: TYPES TIS84, TIS108 N-P-N SILICON TRANSISTORS B U L L E T iN NO . D L -S 731 1254, A U G U S T 1 9 6 9 - R E V IS E D M ARC H 1973 HIGH-FREQUENCY SILECTt TRANSISTORS! FOR TV TUNER AND IF APPLICATIONS Featuring Low-Feedback Capacitance and Forward-AGC Characteristics
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TIS84,
TIS108
TIS84
TIS85)
100-mil
PFL200
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731 opto
Abstract: No abstract text available
Text: TOSHIBA -CDISCRETE/OPTO> 9097250 TOSHIBA ¿Toihilli TT DE I T C H 7 2 5 G 001t,731 fc, |~~ 99 0 <DI S C R E T E / O P T O SEMICONDUCTOR T O SH IB A F IE L D E F F E C T T R A N SIST O R 2 S TECHNICAL DATA S IL IC O N 16731 K 6 4 4 N CHANNEL HOS T Y PE I-M O S 1 )
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IT0T72SG
DT-37-1
100nA
250uA
10ViID
DFAIN-80URCE
EGA-2SK644-4
731 opto
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Untitled
Abstract: No abstract text available
Text: =53402713 000BÔ4b 731 M115-8 Series Programmable Master Clock Oscillators The M l 15-8 is a member of the M l 15 series of high-performance, digitallyprogrammed master clock oscillators with frequencies ranging from 60MHz to 1GHz. The M l 15 series is a cost-effective
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M115-8
60MHz
1000MHz
200kHz
12-bit
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