DPAK/TO-252
Abstract: No abstract text available
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the
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Ups-2726
VMN-PL0469-1311
DPAK/TO-252
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sq4435
Abstract: SQP120N10-09
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs SMM Medical Devices Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the implantable medical market.
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VMN-PL0469-1505
sq4435
SQP120N10-09
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Untitled
Abstract: No abstract text available
Text: SQJ980AEP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 75 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 75 RDS(on) () at VGS = 10 V 0.050 RDS(on) () at VGS = 4.5 V 0.066 ID (A) per leg 8 Configuration Dual TrenchFET Power MOSFET
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SQJ980AEP
AEC-Q101
SQJ980electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ844AEP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 30 RDS(on) () at VGS = 10 V 0.0166 RDS(on) () at VGS = 4.5 V 0.0276 ID (A) per leg 8 Configuration
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Original
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SQJ844AEP
AEC-Q101
SQJ844Aelectronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ962EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualified • 100 % Rg and UIS Tested 60 RDS(on) () at VGS = 10 V 0.060 RDS(on) () at VGS = 4.5 V
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Original
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SQJ962EP
AEC-Q101
SQJ962EP-T1-electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ912EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.014 RDS(on) () at VGS = 4.5 V 0.015 ID (A) per leg
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Original
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SQJ912EP
2002/95/EC
AEC-Q101
SQJ912EP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ960EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 60 RDS(on) () at VGS = 10 V 0.036 RDS(on) () at VGS = 4.5 V 0.046 ID (A) per leg 8 Configuration Dual PowerPAK
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SQJ960EP
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ968EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualified • 100 % Rg and UIS Tested 60 RDS(on) () at VGS = 10 V 0.0336 RDS(on) () at VGS = 4.5 V
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Original
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SQJ968EP
AEC-Q101
SQJ968EP-electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ912AEP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0093 • 100 % Rg and UIS Tested RDS(on) () at VGS = 4.5 V 0.0111
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Original
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SQJ912AEP
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ941EP www.vishay.com Vishay Siliconix Automotive Dual P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 30 RDS(on) () at VGS = - 10 V 0.024 RDS(on) () at VGS = - 4.5 V 0.039 ID (A) per leg -8 Configuration
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Original
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SQJ941EP
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ963EP www.vishay.com Vishay Siliconix Automotive Dual P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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Original
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SQJ963EP
AEC-Q101
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ970EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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Original
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SQJ970EP
AEC-Q101
2002/95/EC
SQJ970EPelectronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ958EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 60 RDS(on) (Ω) at VGS = 10 V 0.0349 RDS(on) (Ω) at VGS = 4.5 V 0.0385 ID (A) per leg 20 Configuration Dual TrenchFET power MOSFET
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Original
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SQJ958EP
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ910AEP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 30 RDS(on) () at VGS = 10 V 0.007 • 100 % Rg and UIS Tested RDS(on) () at VGS = 4.5 V 0.0086
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Original
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SQJ910AEP
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ912EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.014 RDS(on) () at VGS = 4.5 V 0.015 ID (A) per leg
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Original
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SQJ912EP
2002/95/EC
AEC-Q101
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ963EP www.vishay.com Vishay Siliconix Automotive Dual P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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Original
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SQJ963EP
AEC-Q101
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ951EP www.vishay.com Vishay Siliconix Automotive Dual P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY ID (A) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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Original
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SQJ951EP
AEC-Q101
2002/95/EC
SQJ951EP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ844EP Vishay Siliconix Automotive Dual N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd
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Original
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SQJ844EP
2002/95/EC
AEC-Q101
SQJ844EP-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ941EP Vishay Siliconix Automotive Dual P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd
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Original
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SQJ941EP
2002/95/EC
AEC-Q101
SQJ941EP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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63817
Abstract: SO8L dual
Text: SQJ951EP www.vishay.com Vishay Siliconix Automotive Dual P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY ID (A) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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Original
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SQJ951EP
AEC-Q101
2002/95/EC
SQJ951EP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
63817
SO8L dual
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ910EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 30 RDS(on) () at VGS = 10 V 0.0110 • 100 % Rg and UIS Tested RDS(on) () at VGS = 4.5 V 0.0120
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Original
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SQJ910EP
AEC-Q101
SQJ910EPelectronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ956EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 60 RDS(on) (Ω) at VGS = 10 V 0.0267 RDS(on) (Ω) at VGS = 4.5 V 0.0290 ID (A) per leg 23 Configuration Dual TrenchFET power MOSFET
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Original
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SQJ956EP
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ951EP www.vishay.com Vishay Siliconix Automotive Dual P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY ID (A) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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Original
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SQJ951EP
AEC-Q101
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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SO8L
Abstract: No abstract text available
Text: SQJ912EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.014 RDS(on) () at VGS = 4.5 V 0.015 ID (A) per leg
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Original
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SQJ912EP
2002/95/EC
AEC-Q101
SQJ912EP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SO8L
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PDF
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