SCK140LP
Abstract: No abstract text available
Text: SCK140LP 1 A, 40 V Super Low VF Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOD-123 FEATURES High Current Capability Extremely Low Thermal Resistance For Surface Mount Application
|
Original
|
SCK140LP
OD-123
MIL-STD-202,
300us,
21-Dec-2012
SCK140LP
|
PDF
|
schottky barrier diode b22
Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
|
Original
|
OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
schottky barrier diode b22
FCH20U10
Schottky Diode B29
fcu20a40
10ERB20
niec FCHS10A12
FCQS10A065
EC30QSA045
FCHS10A12
fchs20a08
|
PDF
|
FCH20U10
Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
|
Original
|
OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
FCH20U10
niec FCHS10A12
FCU20A40
FCU10UC30
FCQ10U06
FSF05B60
SA10QA03
fchs20a08
10ERB20
FCQS30A045
|
PDF
|
3PHA 20
Abstract: 3PFB 60 3PHA 3PRA 20 CL6B030 3PRA 60 EP10QY04 EP10HY marking code s4 SMc 3pra
Text: マーキング仕様 MARKING STANDARD 日本インターの一般用整流素子は,次表に示す仕様で製品型名などがマークされます。 1. AXIAL LEAD TYPE 2. CHIP TYPE/SOD-123 TYPE 適用素子名 Device Type No. マーキング仕様
|
Original
|
TYPE/SOD-123
10DDA
EP05DA
EP05DA40
10JDA
10EDA
10EDB
EC10DS
3PHA 20
3PFB 60
3PHA
3PRA 20
CL6B030
3PRA 60
EP10QY04
EP10HY
marking code s4 SMc
3pra
|
PDF
|
zener diode E2
Abstract: zener diode j5 zener diode f4 J1 zener diode ZENER DIODE J3 Zener diode h5 zener diode c5 M1 zener DIODE sod 23 KE5 diode
Text: MMBZ52xxB SERIES 500mW Zener Diode .120 3.04 .106(2.70) .103(2.60) 103(2 60) .086(2.10) .063(1.6) .047(1.2) .024(.60) .015(.45) .008(.20) .003(.08) .080(2.04) .070(1.78) ( ) .055(1.40) .035(0.89) .020(.50) .013(.30) .005 (0.18) MAX SOD 23 SOD-23 Dimensions in inches and (millimeters)
|
Original
|
MMBZ52xxB
500mW
OD-23
V-39V
OT-23,
MIL-STD-202E,
zener diode E2
zener diode j5
zener diode f4
J1 zener diode
ZENER DIODE J3
Zener diode h5
zener diode c5
M1 zener DIODE
sod 23
KE5 diode
|
PDF
|
SOD-123 KC
Abstract: No abstract text available
Text: SCK120LP THRU SCK140LP VOLTAGE 20V ~ 40V 1.0AMP Low Vf Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product . . . A suffix of "-C" specifies halogen & lead-free FEATURES PACKAGE DIMENSIONS SOD–123 PLASTIC PACKAGE High Current Capability
|
Original
|
SCK120LP
SCK140LP
MIL-STD-202,
01-Jun-2002
SOD-123 KC
|
PDF
|
CAPACITOR SMD 107C
Abstract: 1N4007 sod-123 1N4007 diode PIV rating 1N4007 SMD VISHAY Christophe Basso 1n4007 sod IMAGE HV Flyback schematic TO09002-1 1n4007 smd 1206 ncp1219
Text: AND8393/D 48 W, 24 V/7.5 V Universal Input AC-DC Printer Adapter Using the NCP1219 Prepared by: Dave Briggs http://onsemi.com ON Semiconductor Introduction The demonstration board is designed as an off−line printer adapter power supply. The adapter operates across universal
|
Original
|
AND8393/D
NCP1219
NCP1219
NCP12XX
CAPACITOR SMD 107C
1N4007 sod-123
1N4007 diode PIV rating
1N4007 SMD VISHAY
Christophe Basso
1n4007 sod IMAGE
HV Flyback schematic
TO09002-1
1n4007 smd 1206
|
PDF
|
smd code book
Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ
|
Original
|
OD-80
OD123/323
OT-23,
OT346
OT-323,
OT-416
OT-223,
OT-89
OT-143,
OT-363
smd code book
transistor SMD P1f
marking code W16 SMD Transistor
TRANSISTOR SMD MARKING CODE jg
smd transistor WW1
Transistor SMD a7s
DIODE SMD L4W
smd diode zener code pj 78
smd transistor wv4
Motorola transistor smd marking codes
|
PDF
|
KS0074
Abstract: COG LCD DISPLAY LCD driver KS LG lcd power supply unit GK 131
Text: KS0074 34COM/80SEG DRIVER & CONTROLLER FOR DOT MATRIX LCD INTRODUCTION KS0074 is a dot matrix LCD driver & controller LSI which is fabricated by low power CMOS technology. It can display 1, 2, or 4 lines with 5 x 8 or 6 x 8 dots format. FUNCTIONS
|
Original
|
KS0074
34COM/80SEG
KS0074
Fig-15.
Fig-16.
Fig-17.
Fig-18)
Fig-18.
COG LCD DISPLAY
LCD driver KS
LG lcd power supply unit
GK 131
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA THLY6480H1 FG-80#-80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY6480H1FG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716FT/FTL DRAMs on a printed circuit board.
|
OCR Scan
|
608-WORD
64-BIT
THLY6480H1
FG-80#
THLY6480H1FG
TC59SM716FT/FTL
|
PDF
|
Untitled
Abstract: No abstract text available
Text: T O S H IB A THLY6416G1 FG-80,-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY6416G1FG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716FT/FTL DRAMs on a printed circuit board.
|
OCR Scan
|
THLY6416G1
FG-80
216-WORD
64-BIT
THLY6416G1FG
TC59SM716FT/FTL
|
PDF
|
Untitled
Abstract: No abstract text available
Text: T O S H IB A THLY6416G1 FG-80,-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY6416G1FG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716FT/FTL DRAMs on a printed circuit board.
|
OCR Scan
|
THLY6416G1
FG-80
216-WORD
64-BIT
THLY6416G1FG
TC59SM716FT/FTL
|
PDF
|
DQ380-VW
Abstract: DQ250-VW DQ380 dq380vw DQ380-V
Text: THLY25N01 B70f70Lf75f75Lf80f80L TOSHIBA TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY25N01B is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM816BFT/BFTL DRAMs on a printed circuit board.
|
OCR Scan
|
THLY25N01
432-WORD
64-BIT
THLY25N01B
TC59SM816BFT/BFTL
DQ380-VW
DQ250-VW
DQ380
dq380vw
DQ380-V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TH LY64N11A70,70L,75,75L,80,80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY64N11A 8,388,608is a -word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM716AFT/AFTL DRAMs on a printed circuit board.
|
OCR Scan
|
LY64N11A70
THLY64N11A
608is
64-bit
TC59SM716AFT/AFTL
608-WORD
216-word
75/75L
|
PDF
|
|
MB426
Abstract: No abstract text available
Text: TOSHIBA THLY12N11B70,70L,75,75L,80,80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY12N11B is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM816BFT/BFTL DRAMs on a printed circuit board.
|
OCR Scan
|
THLY12N11B70
216-WORD
64-BIT
THLY12N11B
TC59SM816BFT/BFTL
MB426
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA T H LY 6 4 N 1 1A 7 0 f70Lf75f75Lf80f80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY64N11A is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716AFT/AFTL DRAMs on a printed circuit board.
|
OCR Scan
|
f70Lf75f75Lf80f80L
THLY64N11A
608-word
64-bit
TC59SM716AFT/AFTL
75/75L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA THLY25N01C70,70L,75,75L,80,80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY25N01C is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM816CFT/CFTL DRAMs on a printed circuit board.
|
OCR Scan
|
THLY25N01C70
THLY25N01C
432-word
64-bit
TC59SM816CFT/CFTL
75/75L
|
PDF
|
THLY6416G1FG-80
Abstract: C17-C24 THLY6416G1FG ftl specification
Text: TOSHIBA THLY6416G1 FG-80#-80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY6416G1FG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM716FT/FTL DRAMs on a printed circuit board.
|
OCR Scan
|
THLY6416G1
FG-80
216-WORD
64-BIT
THLY6416G1FG
TC59SM716FT/FTL
THLY6416G1FG-80
C17-C24
ftl specification
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA THLY12N11B70,70L,75,75L,80,80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY12N11B is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM816BFT/BFTL DRAMs on a printed circuit board.
|
OCR Scan
|
THLY12N11
216-WORD
64-BIT
THLY12N11B
TC59SM816BFT/BFTL
75/75L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA THLY6480H1FG-75,-75L,-80,-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY6480H1FG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716FT/FTL DRAMs on a printed circuit board.
|
OCR Scan
|
THLY6480H1
FG-75
608-WORD
64-BIT
THLY6480H1FG
TC59SM716FT/FTL
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE THLY12N11B70,70L,75,75L,80,80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY12N11B is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM816BFT/BFTL DRAMs on a printed circuit board.
|
OCR Scan
|
THLY12N11
216-WORD
64-BIT
THLY12N11B
TC59SM816BFT/BFTL
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA THLY25N01 B70f70Lf75f75Lf80f80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY25N01B is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM816BFT/BFTL DRAMs on a printed circuit board.
|
OCR Scan
|
THLY25N01
B70f70Lf75f75Lf80f80L
THLY25N01B
432-word
64-bit
TC59SM816BFT/BFTL
|
PDF
|
TOSHIBA MG75
Abstract: TC59SM716FT
Text: TO SH IBA THLY6480X1 M G -7 5 #-75L#-80#-80L TENTATIVE TOSHIBA HYBRID DIGI rAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY6480X1MG is a 8,388,608-word by 6- -bit synchronous dynamic RAM module consisting of four TC59SM716FT/FTL DRAMs on a printed circ ait board.
|
OCR Scan
|
THLY6480X1
MG-75
608-WORD
64-BIT
THLY6480X1MG
TC59SM716FT/FTL
TOSHIBA MG75
TC59SM716FT
|
PDF
|
semiconductor 80L
Abstract: No abstract text available
Text: TOSHIBA THLY6416G1FG-75,-75L,-80,-80L ABSOLUTE M AXIM UM RATINGS SYMBOL ITEM RATING UNIT NOTES V IN Input Voltage - 0 .3 - V DD + 0.3 V 1 VOUT Output Voltage - 0 . 3 - V DD + 0.3 V 1 V dd Power Supply Voltage -0.3 - 4 .6 V 1 t opr Operating Temperature 0-70
|
OCR Scan
|
LY6416G1
FG-75
A0-A11,
THLY6416G1FG)
semiconductor 80L
|
PDF
|