Modeling of SOI FET for RF Switch Applications
Abstract: No abstract text available
Text: RTU2D-2 Modeling of SOI FET for RF Switch Applications Tzung-Yin Lee and Sunyoung Lee Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents the modeling of an SOI FET for RF switch applications. Given that the HF smallsignal predictability, i.e. the insertion loss and the isolation, is
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12-stacked
12stacked
Modeling of SOI FET for RF Switch Applications
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stacked transistor shunt switch
Abstract: stacked transistors SOI RF Peregrine 2000 stacked diplexer and duplexer for GSM and DCS ultra high frequency FETs or transistors SOI series shunt stacked FETs soi stacked FETs circulator s band switching circulator
Text: 18| www.wirelessdesignmag.com COVER STORY| Integrating UltraCMOS Designs in GSM Front Ends G L O S S A RY O F A C R O N Y M S ASM - Antenna switch module BVDSS - Breakdown voltage drain-to-source, gate shorted CDMA - Code-division multiple access CMOS - Complimentary metal oxide semiconductor
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body contact FET soi RF switch
Abstract: be68 Inselek SOI switch "body contact" RF FET solar panels in satellites tol72 mini circulator rg213 CABLE COAX soi switches 2003 body contact soi FET
Text: S pecial R eport UltraCMOS RFICs Ease the Complexity of Satellite Designs C ommercial and military satellites require cost-effective ICs that meet stringent high-reliability standards. In addition, they need to provide distinct advantages that allow designers to advance satellite
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1970s
1980s,
body contact FET soi RF switch
be68
Inselek
SOI switch "body contact" RF FET
solar panels in satellites
tol72
mini circulator
rg213 CABLE COAX
soi switches 2003
body contact soi FET
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Highly integrated CMOS RF SPDT switch with ESD and unit cell optimisation in MCM
Abstract: TPC2A Alcatel-Lucent
Text: Highly integrated CMOS RF SPDT switch with ESD and unit cell optimisation in MCM A.Y.-K. Chen Presented is the performance of a highly integrated RF single-pole double-throw SPDT switch fabricated in a 0.18 µm bulk CMOS process and housed in a low-cost laminated multi-chip module (MCML) package. A switch controller is also implemented and consumes
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PE33632
Abstract: PE33362 PE33632 die pe33382 PE42692 PE33362 die PE42510A1 PE4340 PE33631 PE42694
Text: 2010 Product Selection Guide First Changing how you design RF. Forever. Edition Welcome to Peregrine Semiconductor UltraCMOS : The Green RF Process Technology Peregrine Semiconductor is a leading supplier of high-performance RF CMOS and mixed-signal communications ICs which are ideally suited for
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and940
10B-6
PE33632
PE33362
PE33632 die
pe33382
PE42692
PE33362 die
PE42510A1
PE4340
PE33631
PE42694
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Untitled
Abstract: No abstract text available
Text: Advance Information PE42521 UltraCMOS SPDT RF Switch 100 MHz - 13 GHz Product Description The PE42521 RF switch is designed for use in Test/ ATE and other high performance wireless applications. This broadband general purpose switch maintains excellent RF performance and linearity from 100 MHz
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PE42521
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PE42552
DOC-12814-2
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PE4252
Abstract: No abstract text available
Text: Preliminary Specification PE42520 UltraCMOS SPDT RF Switch 9 kHz - 13 GHz Product Description The PE42520 RF switch is designed for use in Test/ATE and other high performance wireless applications. This broadband general purpose switch maintains excellent RF
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PE42520
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GaAs varactor 0.5pF
Abstract: body contact FET soi RF switch tv Antenna body contact FET soi mobile antenna design WCDMA TRANSCEIVER tv Antenna design high quality TV antenna
Text: NEWS RELEASE EDITORIAL CONTACT: Rodd Novak, V.P., Marketing 858 731-9464 9380 Carroll Park Drive San Diego, CA USA 92121 858-731-9400 Cindy Trotto, Marketing Communications Manager (602) 750-7203 Reader/Literature Inquiries: www.psemi.com [email protected]
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TAG 302-600
Abstract: PE42924
Text: Changing RF Design. Forever. TM 2013 Commercial Products Product Selection Guide First Edition Welcome to Peregrine Semiconductor UltraCMOS RF Process Technology Peregrine Semiconductor NASDAQ: PSMI is a fabless provider of high-performance radio-frequency (RF)
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Untitled
Abstract: No abstract text available
Text: Product Specification PE42520 UltraCMOS SPDT RF Switch 9 kHz - 13 GHz Product Description The PE42520 SPDT absorptive RF switch is designed for use in Test/ATE and other high performance wireless applications. This broadband general purpose switch maintains excellent RF performance and linearity from 9
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PE42520
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Abstract: No abstract text available
Text: Product Specification PE42521 UltraCMOS SPDT RF Switch 9 kHz - 13 GHz Product Description The PE42521 SPDT absorptive RF switch is designed for use in Test/ATE and other high performance wireless applications. This broadband general purpose switch maintains excellent RF performance and linearity from
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Abstract: No abstract text available
Text: Product Specification PE42520 UltraCMOS SPDT RF Switch 9 kHz - 13 GHz Product Description The PE42520 SPDT absorptive RF switch is designed for use in Test/ATE and other high performance wireless applications. This broadband general purpose switch maintains excellent RF performance and linearity from 9
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Abstract: No abstract text available
Text: Product Specification PE42521 UltraCMOS SPDT RF Switch 9 kHz – 13 GHz Product Description The PE42521 SPDT absorptive RF switch is designed for use in Test/ATE and other high performance wireless applications. This broadband general purpose switch maintains excellent RF performance and linearity from
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Abstract: No abstract text available
Text: Product Specification PE42542 UltraCMOS SP4T RF Switch 9 kHz–18 GHz Product Description The PE42542 is a HaRP technology-enhanced absorptive SP4T RF switch designed for use in Test/ ATE, microwave and other wireless applications. This broadband general purpose switch maintains excellent
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Abstract: No abstract text available
Text: Product Specification PE42851 Product Description The PE42851 is a HaRP technology-enhanced SP5T high power RF switch supporting wireless applications up to 1 GHz. It offers maximum power handling of 42.5 dBm continuous wave CW . It delivers high linearity and excellent harmonics performance. It has
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PE42851
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DOC-13014-3
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Abstract: No abstract text available
Text: Product Specification PE42521 UltraCMOS SPDT RF Switch 9 kHz - 13 GHz Product Description The PE42521 SPDT absorptive RF switch is designed for use in Test/ATE and other high performance wireless applications. This broadband general purpose switch maintains excellent RF performance and linearity from
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Abstract: No abstract text available
Text: Product Specification PE42520 UltraCMOS SPDT RF Switch 9 kHz - 13 GHz Product Description The PE42520 SPDT absorptive RF switch is designed for use in Test/ATE and other high performance wireless applications. This broadband general purpose switch maintains excellent RF performance and linearity from 9
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Abstract: No abstract text available
Text: Product Specification PE42851 Product Description The PE42851 is a HaRP technology-enhanced SP5T high power RF switch supporting wireless applications up to 1 GHz. It offers maximum power handling of 42.5 dBm continuous wave CW . It delivers high linearity and excellent harmonics performance. It has
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PE42851
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PE42850
Abstract: No abstract text available
Text: Product Specification PE42850 Product Description The PE42850 is a HaRP technology-enhanced SP5T high power RF switch supporting wireless applications up to 1 GHz. It offers maximum power handling of 42.5 dBm continuous wave CW . It delivers high linearity and
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PE42850
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DOC-14614-2
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Abstract: No abstract text available
Text: Preliminary Specification PE42851 Product Description The PE42851 is a HaRP technology-enhanced SP5T high power RF switch supporting wireless applications up to 1 GHz. It offers maximum power handling of 42.5 dBm continuous wave CW . It delivers high linearity and excellent harmonics performance. It has
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PE42851
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PE42850MLBA
Abstract: No abstract text available
Text: Product Specification PE42850 Product Description The PE42850 is a HaRP technology-enhanced SP5T high power RF switch supporting wireless applications up to 1 GHz. It offers maximum power handling of 42.5 dBm continuous wave CW . It delivers high linearity and
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PE42850
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PE42692
Abstract: F QFN 3X3 PE42xx SPDT stacked FET PE42552 03 07 qfn 3x3 flip flap PE3336 PE3341 PE4230
Text: 2009 Product Selection Guide First Changing how you design RF. Forever. Edition Welcome to Peregrine Semiconductor UltraCMOS RF Process Technology Peregrine Semiconductor is a leading supplier of high-performance RF CMOS and mixed-signal communications ICs which are ideally suited for
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high-re3940
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F QFN 3X3
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SPDT stacked FET
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03 07 qfn 3x3
flip flap
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qualcomm 7500
Abstract: rf spdt mhz dbm 32 pins qfn 5x5 footprint E k m QFN 3X3 F QFN 3X3 PE42692 QUALCOMM Reference design QUALCOMM QFN GSM qualcomm PE3336
Text: 2008 Product Selection Guide Changing how you design RF. Forever. Welcome to Peregrine Semiconductor UltraCMOS RF Process Technology Peregrine Semiconductor is a leading supplier of high-performance RF CMOS and mixed-signal communications ICs which are ideally suited for
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qualcomm 7500
rf spdt mhz dbm
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E k m QFN 3X3
F QFN 3X3
PE42692
QUALCOMM Reference design
QUALCOMM QFN
GSM qualcomm
PE3336
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QFN 4x4 mm 20L
Abstract: QUALCOMM QFN CQFJ qualcomm temperature spec rf spdt mhz dbm PE9308 CQFj 44 GSM qualcomm PE3336 PE3341
Text: 2007 Second Edition Product Selection Guide Changing how you design RF. Forever. Welcome to Peregrine Semiconductor UltraCMOS RF Process Technology Peregrine Semiconductor is a leading supplier of high-performance RF CMOS and mixed-signal communications ICs which are ideally suited for
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QFN 4x4 mm 20L
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CQFJ
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rf spdt mhz dbm
PE9308
CQFj 44
GSM qualcomm
PE3336
PE3341
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