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    SOT 23 MARK 64 Search Results

    SOT 23 MARK 64 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT 23 MARK 64 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FAIRCHILD SOT-23 MARK 1a

    Abstract: BC846 SOT23 NPN sot23 mark NF 847C BC846 BC846A BC846B BC847 BC847A fAIRCHILD BC847b
    Text: BC847A BC847B BC847C C C E SOT-23 BC846A / BC846B / BC847A / BC847B / BC847C BC846A BC846B E B B SOT-23 Mark: 1A. / 1B. Mark: 1E. / 1F. / 1G. NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1.0 µA to 50 mA.


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    BC847A BC847B BC847C OT-23 BC846A BC846B BC847A BC847B BC846A FAIRCHILD SOT-23 MARK 1a BC846 SOT23 NPN sot23 mark NF 847C BC846 BC847 fAIRCHILD BC847b PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904 PZT3904 C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1A NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.


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    2N3904 MMBT3904 PZT3904 2N3904 MMBT3904 OT-23 OT-223 PDF

    CBVK741B019

    Abstract: F63TNR MMBTA13 MPSA13 MPSA14 PN2222N PZTA13
    Text: MMBTA13 PZTA13 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.


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    MMBTA13 PZTA13 OT-23 OT-223 MPSA14 CBVK741B019 F63TNR MMBTA13 MPSA13 PN2222N PZTA13 PDF

    pnp transistor bel 188

    Abstract: AMPSA92 CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 tc 144 e SOT-23 2D
    Text: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units


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    MMBTA92 PZTA92 OT-23 OT-223 pnp transistor bel 188 AMPSA92 CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 tc 144 e SOT-23 2D PDF

    sot 223 fairchild

    Abstract: sot-23 15V vebo pnp CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 SOT-23 2D Fairchild MPSA92
    Text: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


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    MMBTA92 PZTA92 OT-23 OT-223 sot 223 fairchild sot-23 15V vebo pnp CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 SOT-23 2D Fairchild MPSA92 PDF

    transistor bel 100

    Abstract: bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14
    Text: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol


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    MMBTA14 PZTA14 OT-23 OT-223 transistor bel 100 bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14 PDF

    bel 188 transistor

    Abstract: CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14
    Text: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol


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    MMBTA14 PZTA14 OT-23 OT-223 bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14 PDF

    bel 188 transistor

    Abstract: MPSA92 FAIRCHILD SEMICONDUCTOR TR516 CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 SOT-23 2D
    Text: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


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    MMBTA92 PZTA92 OT-23 OT-223 bel 188 transistor MPSA92 FAIRCHILD SEMICONDUCTOR TR516 CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 SOT-23 2D PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


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    MMBTA92 PZTA92 OT-23 OT-223 PDF

    bel 188 transistor

    Abstract: SOT23 1128 of bel 188 transistor
    Text: MMBTA28 PZTA28 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 3SS NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. Absolute Maximum Ratings* Symbol


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    MPSA28 MMBTA28 PZTA28 MPSA28 MMBTA28 OT-23 OT-223 bel 188 transistor SOT23 1128 of bel 188 transistor PDF

    FQT13N60

    Abstract: No abstract text available
    Text: PZTA55 C C E E C TO-92 B SOT-23 E C B B SOT-223 Mark: 2H PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. See MPSA56 for characteristics. Absolute Maximum Ratings*


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    PZTA55 OT-23 OT-223 MPSA56 FQT13N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBTA13 PZTA13 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.


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    MPSA13 MMBTA13 PZTA13 MPSA13 MMBTA13 OT-23 OT-223 MPSA14 PDF

    mps 0724

    Abstract: MPS A92 transistor k mps a92 transistor transistor BR A92 Marking code mps
    Text: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


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    MPSA92 MMBTA92 PZTA92 MPSA92 MMBTA92 OT-23 OT-223 MPSA92RA mps 0724 MPS A92 transistor k mps a92 transistor transistor BR A92 Marking code mps PDF

    672047

    Abstract: Lumex 68 SML-LX2832SUGC-TR SML-LX1206GW-TR 67-1695-1-ND 671-8221 SML-LX0805SUGC-TR SML-LX1210GGC-TR 67-1557-1-ND 67-1551-2-ND
    Text: Surface Mount LEDs Dim. in mm Fig. 1 — SOT-23 Footprint Fig. 2 — 0603 A B 1 2 2 1 C Fig. 6 — 1209 3.2 *Cathode .500 1 Fig. 11 Ro .25 + 2.4 3.2 - *Cathode Mark .800 .900 2.0 .150 .500 Fig. 12  node mark A * on 67-1366-ND .500 .5 1.5 1.5 3.20 1.00 *Anode mark on 67-1355-ND


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    OT-23 67-1366-ND 67-1355-ND 67-1820-1-ND 67-1820-2-ND SML-LX2832SISUGSBC 67-1821-1-ND 67-1821-2-ND SML-LX3632SISUGSBC 67-1822-1-ND 672047 Lumex 68 SML-LX2832SUGC-TR SML-LX1206GW-TR 67-1695-1-ND 671-8221 SML-LX0805SUGC-TR SML-LX1210GGC-TR 67-1557-1-ND 67-1551-2-ND PDF

    marking a42 sot-23

    Abstract: sot23 marking code a42 MPSA42 sot-223 EIA rs 481 SOT23 MARK Y3 mps a42 transistor mps a42 a42 sot-223 Marking code mps
    Text: MMBTA42 PZTA42 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. Absolute Maximum Ratings*


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    MPSA42 MMBTA42 PZTA42 MPSA42 MMBTA42 OT-23 OT-223 MPSA42RA O-92-3 marking a42 sot-23 sot23 marking code a42 MPSA42 sot-223 EIA rs 481 SOT23 MARK Y3 mps a42 transistor mps a42 a42 sot-223 Marking code mps PDF

    CBVK741B019

    Abstract: F63TNR MMBT2222A PN2222A PN2222N PZT2222A BF255 TF411 1P NPN transistor k 2847
    Text: MMBT2222A PZT2222A C C E E C B C TO-92 B B SOT-23 E SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol


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    MMBT2222A PZT2222A OT-23 OT-223 CBVK741B019 F63TNR MMBT2222A PN2222A PN2222N PZT2222A BF255 TF411 1P NPN transistor k 2847 PDF

    PN2222N

    Abstract: CBVK741B019 F63TNR MMBT2907A PN2907A PZT2907A 2F PNP SOT23
    Text: MMBT2907A PZT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*


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    MMBT2907A PZT2907A OT-23 OT-223 PN2222N CBVK741B019 F63TNR MMBT2907A PN2907A PZT2907A 2F PNP SOT23 PDF

    MPSA65

    Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
    Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*


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    MMBTA65 PZTA65 OT-23 OT-223 MPSA64 OT-223 MPSA65 CBVK741B019 F63TNR MMBTA65 PN2222N PZTA65 bel 188 transistor PDF

    25c reference top mark sot23

    Abstract: sot23 A63
    Text: MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*


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    MPSA63 MMBTA63 PZTA63 MPSA63 MMBTA63 OT-23 OT-223 MPSA64 25c reference top mark sot23 sot23 A63 PDF

    CBVK741B019

    Abstract: F63TNR MMBTA42 MPSA42 PN2222N PZTA42
    Text: MMBTA42 PZTA42 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. Absolute Maximum Ratings*


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    MMBTA42 PZTA42 OT-23 OT-223 CBVK741B019 F63TNR MMBTA42 MPSA42 PN2222N PZTA42 PDF

    MPSA42

    Abstract: FAIRCHILD SOT-223 MARK CBVK741B019 F63TNR MMBTA42 PN2222N PZTA42 mpsa42 "sot23"
    Text: MMBTA42 PZTA42 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. Absolute Maximum Ratings*


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    MMBTA42 PZTA42 OT-23 OT-223 MPSA42 FAIRCHILD SOT-223 MARK CBVK741B019 F63TNR MMBTA42 PN2222N PZTA42 mpsa42 "sot23" PDF

    MPSA42

    Abstract: MPSA42 sot-223 CBVK741B019 F63TNR MMBTA42 PN2222N PZTA42 bsrxx
    Text: MMBTA42 PZTA42 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. Absolute Maximum Ratings*


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    MMBTA42 PZTA42 OT-23 OT-223 MPSA42 MPSA42 sot-223 CBVK741B019 F63TNR MMBTA42 PN2222N PZTA42 bsrxx PDF

    PN 2907a

    Abstract: 2907A BF PN2907A
    Text: MMBT2907A PZT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*


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    PN2907A MMBT2907A PZT2907A PN2907A MMBT2907A OT-23 OT-223 07ABU PN2907ATF PN 2907a 2907A BF PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*


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    MPSA65 MMBTA65 PZTA65 MPSA65 MMBTA65 OT-23 OT-223 MPSA64 PDF