SOT 89 2SD965 Search Results

SOT 89 2SD965 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
7UL2T125FK		Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
TC75S102F		Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25
7UL2T126FK		Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
TCR2EF18		Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV)
TCR2LF18		Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV)

SOT 89 2SD965 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD965 TRANSISTOR NPN 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage z Large Collector Power Dissipation and Current z Mini Power Type Package	Original	OT-89-3L OT-89-3L 2SD965	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD965 TRANSISTOR NPN 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage z Large Collector Power Dissipation and Current z Mini Power Type Package	Original	OT-89-3L OT-89-3L 2SD965 500mA 200MHz	PDF
Untitled Abstract: No abstract text available Text: SOT-89 Plastic-Encapsulate Transistors SOT-89 2SD965A TRANSISTOR NPN 1. BASE FEATURES z Audio amplifier z Flash unit of camera z Switching circuit 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units	Original	OT-89 OT-89 2SD965A 500mA	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD965A TRANSISTOR NPN 1. BASE FEATURES z Audio amplifier z Flash unit of camera z Switching circuit 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	OT-89-3L OT-89-3L 2SD965A 500mA	PDF
2SD965A Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors SOT-89 2SD965A TRANSISTOR NPN 1. BASE FEATURES z Audio amplifier z Flash unit of camera z Switching circuit 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	OT-89 OT-89 2SD965A 500mA 2SD965A	PDF
Untitled Abstract: No abstract text available Text: 2SD965A SOT-89 Transistor NPN 1. BASE SOT-89 2. COLLECTOR 1 2 3. EMITTER 3 4.6 4.4 1.8 1.4 1.6 1.4 2.6 4.25 2.4 3.75 Features 0.8 MIN Audio amplifier Flash unit of camera Switching circuit 0.44 0.37 Parameter Value Units VCBO Collector-Base Voltage	Original	2SD965A OT-89 OT-89 500mA	PDF
2SD965AL-AB3-R Abstract: 2SD965 2sd965 transistor 2sd965l ab3r sot 89 2sd965 Text: UNISONIC TECHNOLOGIES CO.,LTD. 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES 1 * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V SOT-89	Original	2SD965/A 2SD965 2SD965A OT-89 2SD965L/2SD965AL 2SD965-AB3-R 2SD965L-AB3-R 2SD965A-AB3-R 2SD965AL-AB3-R OT-89 2SD965 2sd965 transistor 2sd965l ab3r sot 89 2sd965	PDF
Untitled Abstract: No abstract text available Text: Transistors IC SMD Type NPN Silicon Epitaxial Transistors 2SD965-Q SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 • Features ● Low collector-emitter saturation voltage VCE sat ● Satisfactory operation performances at high efficiency with	Original	2SD965-Q OT-89 D965Q	PDF
Untitled Abstract: No abstract text available Text: Product specification 2SD965-Q SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 • Features ● Low collector-emitter saturation voltage VCE sat ● Satisfactory operation performances at high efficiency with 3.00±0.1 0.80±0.1 0.53±0.1	Original	2SD965-Q OT-89 D965Q	PDF
2SD965 Abstract: 2SD965AL 2sd965l 2sd965 transistor 2SD965A Text: UNISONIC TECHNOLOGIES CO., LTD 2SD965/A NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT TRANSISTOR 1 SOT-89 FEATURES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V 1 TO-252	Original	2SD965/A OT-89 2SD965: 2SD965A: O-252 2SD965L/2SD965AL 2SD965-x-AB3-R 2SD965L-x-AB3-R 2SD965-x-T92-B 2SD965L-x-T92-B 2SD965 2SD965AL 2sd965l 2sd965 transistor 2SD965A	PDF
2SD965A Abstract: No abstract text available Text: 2SD965A 5 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES 4  Audio amplifier  Flasg unit of camera  Switching circuit 1 E CLASSIFICATION OF hFE 2	Original	2SD965A OT-89 500mA 17-Nov-2010 2SD965A	PDF
FN1016 Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016 Text: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773	Original	2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 2N2222A 2N2369 2N2369A FN1016 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016	PDF
ksd 302 250v, 10a Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle	OCR Scan	CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF