702E
Abstract: MARKING 5F SOT363 MOSFET N SOT-23 MOSFET SOT-23 2N7002 SOT-23 transistor 702E sot-23 marking E sot-23 marking 113 MARKING ZT SOT23 MARKING ZT
Text: E L E C T R O N I C Device Marking of Surface Mount MOSFET July 2007 /Rev. 1 Part Number Package Marking 2N7002E SOT-323 702E SRT84W SOT-323 AW 2N7002S SOT-363 702S SRT84S SOT-363 VS 2N7002 SOT-23 7002 2N7002ES SOT-23 PK1 SRT100 SOT-23 T100 SRT170 SOT-23 AT
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2N7002E
OT-323
SRT84W
2N7002S
OT-363
SRT84S
2N7002
OT-23
702E
MARKING 5F SOT363
MOSFET N SOT-23
MOSFET SOT-23
2N7002 SOT-23
transistor 702E
sot-23 marking E
sot-23 marking 113
MARKING ZT SOT23
MARKING ZT
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LMBTA42LT1
Abstract: LMBTA42LT1G LMBTA43LT1 LMBTA43LT1G 1d sot-23
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors LMBTA42LT1 LMBTA43LT1 ƽ Pb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping 1D SOT-23 3000/Tape&Reel 1D Pb-Free SOT-23 3000/Tape&Reel M1E SOT-23 3000/Tape&Reel
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LMBTA42LT1
LMBTA43LT1
OT-23
3000/Tape
LMBTA42LT1
LMBTA42LT1G
LMBTA43LT1
LMBTA43LT1G
1d sot-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors LMBTA42LT1G LMBTA43LT1G ƽ Pb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LMBTA42LT1G 1D SOT-23 3000/Tape&Reel LMBTA42LT3G 1D SOT-23 10000/Tape&Reel
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LMBTA42LT1G
LMBTA43LT1G
OT-23
3000/Tape
LMBTA42LT3G
10000/Tape
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5B1 SOT23
Abstract: 5B1 SOT-23 sot23 marking 5c1 marking 5b1
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. LBC807-16LT1 DEVICE MARKING AND ORDERING INFORMATION Device Marking LBC807-16LT1 LBC807-16LT1G 5A1 SOT-23 5B1 SOT-23 5B1 Pb-Free LBC807-40LT1 LBC807-40LT1G
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LBC807-16LT1
LBC807-16LT1G
OT-23
LBC807-40LT1
LBC807-40LT1G
LBC807-25LT1
LBC807-25LT1G
5B1 SOT23
5B1 SOT-23
sot23 marking 5c1
marking 5b1
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QS sot-23
Abstract: LBAS16LT1 LBAS16LT1G A6 t sot23
Text: LESHAN RADIO COMPANY, LTD. Switching Diode ƽ Pb-Free Package is available. LBAS16LT1 DEVICE MARKING AND ORDERING INFORMATION Device LBAS16LT1 LBAS16LT1G Marking Package Shipping A6 SOT-23 3000/Tape&Reel A6 Pb-Free SOT-23 3000/Tape&Reel 3 1 2 MAXIMUM RATINGS
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LBAS16LT1
OT-23
3000/Tape
LBAS16LT1G
LBAS16LT1-3/3
QS sot-23
LBAS16LT1
LBAS16LT1G
A6 t sot23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Switching Diode ƽ Pb-Free Package is available. LBAS16LT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBAS16LT1G A6 SOT-23 3000/Tape&Reel LBAS16LT3G A6 SOT-23 10000/Tape&Reel 3 1 2 MAXIMUM RATINGS Rating
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LBAS16LT1G
OT-23
3000/Tape
LBAS16LT3G
10000/Tape
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1N914 SOT-23
Abstract: 2L SOT-23 1N914 LMBT5401LT1 LMBT5401LT1G MARKING .01 SOT
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE LMBT5401LT1 ƽPb-Free package is available. 3 DEVICE MARKING AND ORDERING INFORMATION Device Package Shipping 1 LMBT5401LT1 SOT-23 3000/Tape&Reel LMBT5401LT1G Pb-Free SOT-23 3000/Tape&Reel 2 SOT– 23
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LMBT5401LT1
OT-23
3000/Tape
LMBT5401LT1G
LMBT5401LT1-5/5
1N914 SOT-23
2L SOT-23
1N914
LMBT5401LT1
LMBT5401LT1G
MARKING .01 SOT
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Untitled
Abstract: No abstract text available
Text: BCW71/BCW72 Features: tLow current max.100mA tLow voltage(max.45V) tLow noise Applications: t SOT-23 Ordering Information Type No. Marking: Package Code: BCW71 K1 SOT-23 BCW73 K2 SOT-23 Maximum Ratings & Characteristics: Tamb=25o Parameter: Symbol: Value:
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BCW71/BCW72
100mA)
OT-23
BCW71
BCW73
100MHz
200Hz
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BF569
Abstract: marking A1 TRANSISTOR BF569R marking LM
Text: BF569/BF569R Silicon PNP Planar RF Transistor Applications For selfoscillating RF mixter stages 1 2 1 3 3 94 9280 BF569 Marking: LH Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BF569R Marking: LM Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter
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BF569/BF569R
BF569
BF569R
D-74025
16-Jan-96
marking A1 TRANSISTOR
marking LM
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Untitled
Abstract: No abstract text available
Text: KST42 / KST43 NPN Epitaxial Silicon Transistor Features • High-Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method KST42MTF 1D SOT-23 3L Tape and Reel KST43MTF 1E SOT-23 3L Tape and Reel
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KST42
KST43
OT-23
KST42MTF
OT-23
KST43MTF
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1D SOT23
Abstract: sot23 marking 1d transistor SOT23 1d 1d sot-23 marking
Text: MMBTA42 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92(PNP) MARKING:1D MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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MMBTA42
OT-23
OT-23
MMBTA92
30MHz
1D SOT23
sot23 marking 1d
transistor SOT23 1d
1d sot-23 marking
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR NPN SOT-23 FEATURES Switching transistor 1. BASE 2. EMITTER MARKING: MMBT4401=2X 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
MMBT4401
OT-23
MMBT4401
-55to
150mA
150mA,
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P
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OT-23
MMBT2222A
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A SOT-23 TRANSISTOR NPN FEATURES y y 1. BASE Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P1
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OT-23
3DK2222A
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
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MARKING 1P
Abstract: MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P
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OT-23
MMBT2222A
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
MARKING 1P
MMBT2222A
MMBT2907A
1p sot23
TRANSISTOR 1P SOT23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P
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OT-23
MMBT2222A
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
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MMBT4403
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR PNP FEATURES Switching transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING :MMBT4403=2T MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
OT-23
MMBT4403
-100A
-100A,
-150mA
-150mA,
-15mA
150mA,
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MMBT4401
Abstract: marking 2X SOT23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR NPN SOT-23 FEATURES Switching transistor 1. BASE 2. EMITTER MARKING: MMBT4401=2X 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
MMBT4401
OT-23
MMBT4401
-55to
150mA
150mA,
100MHz
marking 2X SOT23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P
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OT-23
MMBT2222A
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A TRANSISTOR PNP SOT-23 1. BASE 2. EMITTER FEATURES y Epitaxial planar die construction y Complementary NPN Type available(MMBT2222A) 3. COLLECTOR MARKING:2F
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OT-23
MMBT2907A
OT-23
MMBT2222A)
-500mA
-150mA
-15mA
-500mA
-50mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A SOT-23 TRANSISTOR NPN FEATURES y y 1. BASE Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P1
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OT-23
3DK2222A
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
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1p1 transistor
Abstract: 3DK2222A MMBT2907ALT1
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907ALT1) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P1
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OT-23
3DK2222A
OT-23
MMBT2907ALT1)
-55to
150mA
500mA
100MHz
1p1 transistor
3DK2222A
MMBT2907ALT1
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marking 2f 3
Abstract: MMBT2222A MMBT2907A marking 2f
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT2907A Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR
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OT-23
MMBT2907A
MMBT2222A)
-10mA
-500mA
-150mA
-15mA
-500mA
-50mA
marking 2f 3
MMBT2222A
MMBT2907A
marking 2f
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR PNP FEATURES Switching transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING :MMBT4403=2T MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
OT-23
MMBT4403
-150mA
-150mA,
-15mA
150mA,
-20mA
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