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    SOT-23 MARKING SA Search Results

    SOT-23 MARKING SA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 MARKING SA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    702E

    Abstract: MARKING 5F SOT363 MOSFET N SOT-23 MOSFET SOT-23 2N7002 SOT-23 transistor 702E sot-23 marking E sot-23 marking 113 MARKING ZT SOT23 MARKING ZT
    Text: E L E C T R O N I C Device Marking of Surface Mount MOSFET July 2007 /Rev. 1 Part Number Package Marking 2N7002E SOT-323 702E SRT84W SOT-323 AW 2N7002S SOT-363 702S SRT84S SOT-363 VS 2N7002 SOT-23 7002 2N7002ES SOT-23 PK1 SRT100 SOT-23 T100 SRT170 SOT-23 AT


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    PDF 2N7002E OT-323 SRT84W 2N7002S OT-363 SRT84S 2N7002 OT-23 702E MARKING 5F SOT363 MOSFET N SOT-23 MOSFET SOT-23 2N7002 SOT-23 transistor 702E sot-23 marking E sot-23 marking 113 MARKING ZT SOT23 MARKING ZT

    LMBTA42LT1

    Abstract: LMBTA42LT1G LMBTA43LT1 LMBTA43LT1G 1d sot-23
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors LMBTA42LT1 LMBTA43LT1 ƽ Pb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping 1D SOT-23 3000/Tape&Reel 1D Pb-Free SOT-23 3000/Tape&Reel M1E SOT-23 3000/Tape&Reel


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    PDF LMBTA42LT1 LMBTA43LT1 OT-23 3000/Tape LMBTA42LT1 LMBTA42LT1G LMBTA43LT1 LMBTA43LT1G 1d sot-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors LMBTA42LT1G LMBTA43LT1G ƽ Pb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LMBTA42LT1G 1D SOT-23 3000/Tape&Reel LMBTA42LT3G 1D SOT-23 10000/Tape&Reel


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    PDF LMBTA42LT1G LMBTA43LT1G OT-23 3000/Tape LMBTA42LT3G 10000/Tape

    5B1 SOT23

    Abstract: 5B1 SOT-23 sot23 marking 5c1 marking 5b1
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. LBC807-16LT1 DEVICE MARKING AND ORDERING INFORMATION Device Marking LBC807-16LT1 LBC807-16LT1G 5A1 SOT-23 5B1 SOT-23 5B1 Pb-Free LBC807-40LT1 LBC807-40LT1G


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    PDF LBC807-16LT1 LBC807-16LT1G OT-23 LBC807-40LT1 LBC807-40LT1G LBC807-25LT1 LBC807-25LT1G 5B1 SOT23 5B1 SOT-23 sot23 marking 5c1 marking 5b1

    QS sot-23

    Abstract: LBAS16LT1 LBAS16LT1G A6 t sot23
    Text: LESHAN RADIO COMPANY, LTD. Switching Diode ƽ Pb-Free Package is available. LBAS16LT1 DEVICE MARKING AND ORDERING INFORMATION Device LBAS16LT1 LBAS16LT1G Marking Package Shipping A6 SOT-23 3000/Tape&Reel A6 Pb-Free SOT-23 3000/Tape&Reel 3 1 2 MAXIMUM RATINGS


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    PDF LBAS16LT1 OT-23 3000/Tape LBAS16LT1G LBAS16LT1-3/3 QS sot-23 LBAS16LT1 LBAS16LT1G A6 t sot23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Switching Diode ƽ Pb-Free Package is available. LBAS16LT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBAS16LT1G A6 SOT-23 3000/Tape&Reel LBAS16LT3G A6 SOT-23 10000/Tape&Reel 3 1 2 MAXIMUM RATINGS Rating


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    PDF LBAS16LT1G OT-23 3000/Tape LBAS16LT3G 10000/Tape

    1N914 SOT-23

    Abstract: 2L SOT-23 1N914 LMBT5401LT1 LMBT5401LT1G MARKING .01 SOT
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE LMBT5401LT1 ƽPb-Free package is available. 3 DEVICE MARKING AND ORDERING INFORMATION Device Package Shipping 1 LMBT5401LT1 SOT-23 3000/Tape&Reel LMBT5401LT1G Pb-Free SOT-23 3000/Tape&Reel 2 SOT– 23


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    PDF LMBT5401LT1 OT-23 3000/Tape LMBT5401LT1G LMBT5401LT1-5/5 1N914 SOT-23 2L SOT-23 1N914 LMBT5401LT1 LMBT5401LT1G MARKING .01 SOT

    Untitled

    Abstract: No abstract text available
    Text: BCW71/BCW72 Features: tLow current max.100mA tLow voltage(max.45V) tLow noise Applications: t SOT-23 Ordering Information Type No. Marking: Package Code: BCW71 K1 SOT-23 BCW73 K2 SOT-23 Maximum Ratings & Characteristics: Tamb=25o Parameter: Symbol: Value:


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    PDF BCW71/BCW72 100mA) OT-23 BCW71 BCW73 100MHz 200Hz

    BF569

    Abstract: marking A1 TRANSISTOR BF569R marking LM
    Text: BF569/BF569R Silicon PNP Planar RF Transistor Applications For selfoscillating RF mixter stages 1 2 1 3 3 94 9280 BF569 Marking: LH Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BF569R Marking: LM Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter


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    PDF BF569/BF569R BF569 BF569R D-74025 16-Jan-96 marking A1 TRANSISTOR marking LM

    Untitled

    Abstract: No abstract text available
    Text: KST42 / KST43 NPN Epitaxial Silicon Transistor Features • High-Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method KST42MTF 1D SOT-23 3L Tape and Reel KST43MTF 1E SOT-23 3L Tape and Reel


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    PDF KST42 KST43 OT-23 KST42MTF OT-23 KST43MTF

    1D SOT23

    Abstract: sot23 marking 1d transistor SOT23 1d 1d sot-23 marking
    Text: MMBTA42 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — High breakdown voltage — Low collector-emitter saturation voltage — Complementary to MMBTA92(PNP) MARKING:1D MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


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    PDF MMBTA42 OT-23 OT-23 MMBTA92 30MHz 1D SOT23 sot23 marking 1d transistor SOT23 1d 1d sot-23 marking

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR NPN SOT-23 FEATURES Switching transistor 1. BASE 2. EMITTER MARKING: MMBT4401=2X 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF OT-23 MMBT4401 OT-23 MMBT4401 -55to 150mA 150mA, 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


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    PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A SOT-23 TRANSISTOR NPN FEATURES y y 1. BASE Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P1


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    PDF OT-23 3DK2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    MARKING 1P

    Abstract: MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


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    PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz MARKING 1P MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


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    PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    MMBT4403

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR PNP FEATURES Switching transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING :MMBT4403=2T MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    PDF OT-23 OT-23 MMBT4403 -100A -100A, -150mA -150mA, -15mA 150mA,

    MMBT4401

    Abstract: marking 2X SOT23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR NPN SOT-23 FEATURES Switching transistor 1. BASE 2. EMITTER MARKING: MMBT4401=2X 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    PDF OT-23 MMBT4401 OT-23 MMBT4401 -55to 150mA 150mA, 100MHz marking 2X SOT23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


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    PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A TRANSISTOR PNP SOT-23 1. BASE 2. EMITTER FEATURES y Epitaxial planar die construction y Complementary NPN Type available(MMBT2222A) 3. COLLECTOR MARKING:2F


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    PDF OT-23 MMBT2907A OT-23 MMBT2222A) -500mA -150mA -15mA -500mA -50mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A SOT-23 TRANSISTOR NPN FEATURES y y 1. BASE Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P1


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    PDF OT-23 3DK2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    1p1 transistor

    Abstract: 3DK2222A MMBT2907ALT1
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907ALT1) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P1


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    PDF OT-23 3DK2222A OT-23 MMBT2907ALT1) -55to 150mA 500mA 100MHz 1p1 transistor 3DK2222A MMBT2907ALT1

    marking 2f 3

    Abstract: MMBT2222A MMBT2907A marking 2f
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT2907A Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR


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    PDF OT-23 MMBT2907A MMBT2222A) -10mA -500mA -150mA -15mA -500mA -50mA marking 2f 3 MMBT2222A MMBT2907A marking 2f

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR PNP FEATURES Switching transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING :MMBT4403=2T MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF OT-23 OT-23 MMBT4403 -150mA -150mA, -15mA 150mA, -20mA