Untitled
Abstract: No abstract text available
Text: PMEG2005CT 500 mA low VF dual MEGA Schottky barrier rectifier Rev. 2 — 22 June 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier in common cathode configuration with an integrated guard ring for stress protection,
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PMEG2005CT
O-236AB)
AEC-Q101
771-PMEG2005CT215
PMEG2005CT
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SMD TRANSISTOR MARKING w7
Abstract: No abstract text available
Text: PBHV9115T 150 V, 1 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBHV9115T
O-236AB)
PBHV8115T.
AEC-Q101
PBHV9115T
771-PBHV9115T215
SMD TRANSISTOR MARKING w7
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Untitled
Abstract: No abstract text available
Text: Wave soldering footprint Footprint information for wave soldering of plastic surface-mounted package; 3 leads SOT23 2.2 1.2 2x 1.4 (2×) 4.6 2.6 preferred transport direction during soldering 1.4 solder land 2.8 solder resist 4.5 occupied area www.nxp.com
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sot023
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sot023
Abstract: No abstract text available
Text: PESD5V0S2BT Low capacitance bidirectional double ESD protection diode Rev. 03 — 9 February 2009 Product data sheet 1. Product profile 1.1 General description Low capacitance bidirectional double ElectroStatic Discharge ESD protection diode in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to
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O-236AB)
771-PESD5V0S2BT-T/R
sot023
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pesd1can4
Abstract: BV SMD SOT-023 PESD1CAN.215 PESD1CAN
Text: PESD1CAN CAN bus ESD protection diode Rev. 04 — 15 February 2008 Product data sheet 1. Product profile 1.1 General description PESD1CAN in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package designed to protect two automotive Controller Area Network (CAN) bus lines
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O-236AB)
771-PESD1CAN-T/R
pesd1can4
BV SMD
SOT-023
PESD1CAN.215
PESD1CAN
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Untitled
Abstract: No abstract text available
Text: 2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
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2N7002CK
O-236AB)
2N7002CK
771-2N7002CK215
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prtr5v0u6s
Abstract: csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY
Text: Dark Green − NXP‘s transfer to halogen-free products Why Dark Green? We as NXP are deeply committed to developing eco-friendly products and integrating environmental safety aspects in all manufacturing processes. For our packaging technology this meant a shift to lead-free and halogen-free “Dark Green”, years
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2002/95/EC.
PMBTA42
PMEG3005EL
PMEG6010EP
PMR780SN
PTVS12VS1UR
PZU13y
PMBTA42DS
PMEG3005ET
PMEG6010ER
prtr5v0u6s
csp1040
TSSOP20 FOOTPRINT
ip4065cx11
smd transistor GY sot89
IP4065CX11/LF
BV 9y transistor smd
IP4058CX8/LF
IP4280CZ10
smd transistor GY
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PMEG4005CT
Abstract: No abstract text available
Text: PMEG4005CT 500 mA low VF dual MEGA Schottky barrier rectifier Rev. 01 — 5 June 2009 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier in common cathode configuration with an integrated guard ring for stress protection,
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PMEG4005CT
O-236AB)
AEC-Q101
PMEG4005CT
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Untitled
Abstract: No abstract text available
Text: Reflow soldering footprint Footprint information for reflow soldering of plastic surface-mounted package; 3 leads SOT23 3.3 2.9 1.9 3 0.6 3x 0.7 (3×) solder land solder paste deposit 0.5 (3×) solder land plus solder paste 0.6 (3×) solder resist 1 occupied area
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sot023
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smd code marking LF sot23
Abstract: PESD36VS2UT
Text: PESD36VS2UT Low capacitance unidirectional double ESD protection diode Rev. 01 — 16 July 2009 Product data sheet 1. Product profile 1.1 General description Low capacitance unidirectional double ElectroStatic Discharge ESD protection diode in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package designed to
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PESD36VS2UT
O-236AB)
AEC-Q101
PESD36VS2UT
smd code marking LF sot23
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PMV40UN2
Abstract: No abstract text available
Text: SO T2 3 PMV40UN2 30 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV40UN2
O-236AB)
PMV40UN2
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PDTD1xxxT series 500 mA, 50 V NPN resistor-equipped transistors Rev. 1 — 15 May 2014 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
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O-236AB)
PDTD143ET
O-236AB
PDTB143ET
PDTD143XT
PDTB143XT
PDTD114ET
PDTB114ET
AEC-Q101
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smd code marking ft sot23
Abstract: PBSS4032PT marking "td" sot23
Text: PBSS4032NT 30 V, 2.6 A NPN low VCEsat BISS transistor Rev. 01 — 18 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBSS4032NT
O-236AB)
PBSS4032PT.
AEC-Q101
PBSS4032NT
smd code marking ft sot23
PBSS4032PT
marking "td" sot23
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SOT23 DIODE marking CODE AV
Abstract: No abstract text available
Text: PMEG3005CT 500 mA low VF dual MEGA Schottky barrier rectifier Rev. 2 — 20 September 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier in common cathode configuration with an integrated guard ring for stress protection,
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PMEG3005CT
O-236AB)
AEC-Q101
SOT23 DIODE marking CODE AV
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smd code marking ft sot23
Abstract: marking code my SMD Transistor npn marking code SG transistors SMD MARKING CODE sg smd code marking sot23 nxp MARKING SG marking code NA sot23 MARKING CODE SMD IC MARKING sg SOT23 MARKING SOT23 .DG
Text: 2PD602AQL; 2PD602ARL; 2PD602ASL 50 V, 500 mA NPN general-purpose transistors Rev. 01 — 27 October 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package.
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2PD602AQL;
2PD602ARL;
2PD602ASL
O-236AB)
2PD602AQL
O-236AB
2PD602ARL
2PB710ARL
2PB710ASL
smd code marking ft sot23
marking code my SMD Transistor npn
marking code SG transistors
SMD MARKING CODE sg
smd code marking sot23
nxp MARKING SG
marking code NA sot23
MARKING CODE SMD IC
MARKING sg SOT23
MARKING SOT23 .DG
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV48XPA 20 V, P-channel Trench MOSFET 10 March 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV48XPA
O-236AB)
AEC-Q101
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bas16
Abstract: No abstract text available
Text: BAS16 series High-speed switching diodes Rev. 6 — 24 September 2014 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview
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BAS16
BAS16
O-236AB
BAS16H
OD123F
BAS16J
OD323F
SC-90
BAS16L
OD882
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BC807
Abstract: PDTB123Y PDTB123YK PDTB123YS PDTB123YT PDTD123YT
Text: PDTB123YT PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 3 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor RET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
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PDTB123YT
O-236AB)
PDTD123YT.
AEC-Q101
BC807
PDTB123Y
PDTB123YK
PDTB123YS
PDTB123YT
PDTD123YT
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BAV99 SERIES
Abstract: BAV99 NXP MARKING bav99 nxp Diode bav99 nxp BAV99 NXP SMD MARKING CODE BAV99 BAV993 BAV99S-SOT363 NXP BAV99W reflow temperature Diode bav99
Text: BAV99 series High-speed switching diodes Rev. 8 — 18 November 2010 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview Type number
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BAV99
BAV99
O-236AB
BAV99S
OT363
SC-88
BAV99W
OT323
SC-70
AEC-Q101
BAV99 SERIES
BAV99 NXP MARKING
bav99 nxp
Diode bav99 nxp
NXP SMD MARKING CODE BAV99
BAV993
BAV99S-SOT363
NXP BAV99W reflow temperature
Diode bav99
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PBSS4021PT
Abstract: pbss4021nt
Text: PBSS4021NT 20 V, 4.3 A NPN low VCEsat BISS transistor Rev. 01 — 31 January 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBSS4021NT
O-236AB)
PBSS4021PT.
AEC-Q101
PBSS4021NT
PBSS4021PT
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PBSS4041PT
Abstract: NXP TRANSISTOR SMD MARKING CODE SOT23
Text: PBSS4041PT 60 V, 2.7 A PNP low VCEsat BISS transistor Rev. 02 — 9 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBSS4041PT
O-236AB)
PBSS4041NT.
AEC-Q101
PBSS4041PT
NXP TRANSISTOR SMD MARKING CODE SOT23
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marking code SS SOT23
Abstract: smd code marking sot23 SL 100 NPN Transistor equivalent of SL 100 NPN Transistor transistor marking DG marking codes SOT23 SS MARKING SMD IC CODE smd code marking ft sot23 SMD MARKING CODE transistor 2PB709ARL
Text: 2PB709ARL; 2PB709ASL 45 V, 100 mA PNP general-purpose transistors Rev. 01 — 12 November 2008 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package.
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2PB709ARL;
2PB709ASL
O-236AB)
2PB709ARL
O-236AB
2PD601ARL
2PD601ASL
2PB709ARL/DG
marking code SS SOT23
smd code marking sot23
SL 100 NPN Transistor
equivalent of SL 100 NPN Transistor
transistor marking DG
marking codes SOT23 SS
MARKING SMD IC CODE
smd code marking ft sot23
SMD MARKING CODE transistor
2PB709ARL
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PDTB113E
Abstract: No abstract text available
Text: PDTB113ET PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ Rev. 3 — 14 September 2010 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor RET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
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PDTB113ET
O-236AB)
PDTD113ET.
AEC-Q101
BC807
PDTB113E
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Untitled
Abstract: No abstract text available
Text: PMBTA42 300 V, 100 mA NPN high-voltage transistor Rev. 05 — 12 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. PNP complement: PMBTA92.
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PMBTA42
O-236AB)
PMBTA92.
PMBTA42
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