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Text: Package outline Earless flanged LDMOST ceramic package; 6 leads SOT1239B D F A 3 L D D1 c U1 1 4 5 α H U2 Z Z1 6 2 b 7 w2 b1 E E1 5 D Q 10 mm scale Dimensions Unit 1 A max 4.75 nom min 3.45 mm b b1 c D D1 E F E1 H L Q U1 U2 1.83 12.83 0.20 20.02 19.96 9.53
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Text: BLF8G20LS-160V Power LDMOS transistor Rev. 2 — 24 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1.
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Text: BLF8G38LS-75V Power LDMOS transistor Rev. 3 — 1 July 2014 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1.
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Text: BLF8G38LS-75V Power LDMOS transistor Rev. 1 — 4 November 2013 Objective data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz.
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BGU7073
Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
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Text: BLF8G38LS-75V Power LDMOS transistor Rev. 2 — 9 January 2014 Preliminary data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz.
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Text: BLF8G20LS-230V Power LDMOS transistor Rev. 1 — 7 November 2013 Preliminary data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.
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Text: BLF8G20LS-230V Power LDMOS transistor Rev. 2 — 21 February 2014 Product data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.
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Text: BLF8G20LS-160V Power LDMOS transistor Rev. 1 — 5 March 2014 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.
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