zxtP
Abstract: Bv 42 transistor ZXTP2008GTA
Text: ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTP2008G
OT223
OT223
ZXTP2008GTA
ZXTP2008GTC
522-ZXTP2008GTA
ZXTP2008GTA
zxtP
Bv 42 transistor
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X5T949
Abstract: sot223 transistor pinout ZX5T949G
Text: ZX5T949G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in
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ZX5T949G
OT223
OT223
ZX5T949GTA
X5T949
sot223 transistor pinout
ZX5T949G
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sot223 transistor pinout
Abstract: sot223 device Marking ZXTP2008G ZXTP2008GTA ZXTP2008GTC zxtP
Text: ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTP2008G
OT223
OT223
ZXTP2008GTA
ZXTP2008GTC
sot223 transistor pinout
sot223 device Marking
ZXTP2008G
ZXTP2008GTA
ZXTP2008GTC
zxtP
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ZXTN25020DG
Abstract: TS16949 ZXTN25020DGTA ZXTP25020DG ON950 ZXTN25
Text: ZXTN25020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC cont = 7A VCE(sat) < 48mV @ 1A RCE(sat) = 31mΩ PD = 3.0W Complementary part number ZXTP25020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor
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ZXTN25020DG
OT223
ZXTP25020DG
OT223
D-81541
ZXTN25020DG
TS16949
ZXTN25020DGTA
ZXTP25020DG
ON950
ZXTN25
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Untitled
Abstract: No abstract text available
Text: ZXTN25020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC cont = 7A VCE(sat) < 48mV @ 1A RCE(sat) = 31mΩ PD = 3.0W Complementary part number ZXTP25020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor
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ZXTN25020DG
OT223
ZXTP25020DG
OT223
D-81541
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Untitled
Abstract: No abstract text available
Text: ZX5T949G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V PNP transistor offers extrem ely low on state losses m aking it ideal for use in
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ZX5T949G
OT223
OT223
5T949
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Untitled
Abstract: No abstract text available
Text: ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC circuits
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ZXTP2008G
OT223
OT223
TP2008GTA
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ZXTP25 20V 6A
Abstract: ZXTP25020DG ZXTN25020DG TS16949 ZXTP25020DGTA
Text: ZXTP25020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -65mV @ -1A RCE(sat) = 42m⍀ PD = 3.0W Complementary part number ZXTN25020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor
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ZXTP25020DG
OT223
-65mV
ZXTN25020DG
OT223
ZXTP25020DGTA
D-81541
ZXTP25 20V 6A
ZXTP25020DG
ZXTN25020DG
TS16949
ZXTP25020DGTA
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X5T851
Abstract: bv 42 TRANSISTOR equivalent
Text: ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in
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ZX5T851G
OT223
OT223
522-ZX5T851GTA
ZX5T851GTA
X5T851
bv 42 TRANSISTOR equivalent
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Untitled
Abstract: No abstract text available
Text: ZXTP25020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -65mV @ -1A RCE(sat) = 42m⍀ PD = 3.0W Complementary part number ZXTN25020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor
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ZXTP25020DG
OT223
-65mV
ZXTN25020DG
OT223
ZXTP25020DGTA
D-81541
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ZXTN2010GTA
Abstract: ZXTN2010G ZXTN2010GTC Bv 42 transistor
Text: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2010G
OT223
OT223
ZXTN2010GTA
ZXTN2010G
ZXTN2010GTC
Bv 42 transistor
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Untitled
Abstract: No abstract text available
Text: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2010G
OT223
OT223
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ZXTN
Abstract: ZXTN2010GTA ZXTN2010G ZXTN2010GTC
Text: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2010G
OT223
OT223
INFORMAT26100
ZXTN
ZXTN2010GTA
ZXTN2010G
ZXTN2010GTC
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ZX5T851G
Abstract: ZX5T851GTA ZX5T851GTC Bv 42 transistor
Text: ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in
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ZX5T851G
OT223
OT223
ZX5T851G
ZX5T851GTA
ZX5T851GTC
Bv 42 transistor
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Q67042-S4165
Abstract: No abstract text available
Text: BSP 316 P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode R DS on • Logic Level ID • dv/dt rated -100 V 1.8 Ω -0.68 A P-SOT223-4-1 Drain pin 2/4 Gate pin1 Source pin 3 Type Package BSP 316 P P-SOT223-4-1
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P-SOT223-4-1
Q67042-S4165
BSP316P
-200A/
Q67042-S4165
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Untitled
Abstract: No abstract text available
Text: ZXTP03200BG 200V PNP Low VCE sat transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state
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ZXTP03200BG
OT223
-200V
-160mV
OT223
ZXTP03200BGTA
ZXTP03200BG
A1103-04,
522-ZXTP03200BGTA
ZXTP03200BGTA
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Untitled
Abstract: No abstract text available
Text: ZXTN19060CG 60V NPN low sat medium power transistor in SOT223 Summary BVCEO > 60V BVCEX > 160V BVECO > 6V IC cont = 7A VCE(sat) < 50mV @ 1A RCE(sat) = 30mΩ PD = 3.0W Complementary part number ZXTP19060CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor
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ZXTN19060CG
OT223
ZXTP19060CG
OT223
D-81541
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TS16949
Abstract: ZXTN19060CG ZXTN19060CGTA ZXTP19060CG
Text: ZXTN19060CG 60V NPN low sat medium power transistor in SOT223 Summary BVCEO > 60V BVCEX > 160V BVECO > 6V IC cont = 7A VCE(sat) < 50mV @ 1A RCE(sat) = 30mΩ PD = 3.0W Complementary part number ZXTP19060CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor
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ZXTN19060CG
OT223
ZXTP19060CG
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D-81541
TS16949
ZXTN19060CG
ZXTN19060CGTA
ZXTP19060CG
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TS16949
Abstract: ZXTP03200BG ZXTP03200BGTA marking sot223 GY
Text: ZXTP03200BG 200V PNP Low VCE sat transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state
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ZXTP03200BG
OT223
-200V
-160mV
OT223
ZXTP03200BGTA
D-81541
A1103-04,
TS16949
ZXTP03200BG
ZXTP03200BGTA
marking sot223 GY
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PNP TRANSISTOR SOT89
Abstract: sc 107 transistor SC-62 C1 SOT89 PBSS4250X PBSS5540Z PXTA14 audio power amplifiers with transistors PBSS9110Z PBSS5320X
Text: Semiconductors Date of release: September 2004 Philips’ medium power transistor portfolio in SOT89 SC-62 and SOT223 (SC-73) General features Portfolio overview • Available in the biggest small-signal packages SOT89 (SC-62) and SOT223 (SC-73) • Bridging the gap between DPAK power transistors
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SC-62)
OT223
SC-73)
PNP TRANSISTOR SOT89
sc 107 transistor
SC-62
C1 SOT89
PBSS4250X
PBSS5540Z
PXTA14
audio power amplifiers with transistors
PBSS9110Z
PBSS5320X
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Untitled
Abstract: No abstract text available
Text: Philips Com ponents Datasheet status Product specification date of issue April 1991 BDS643/645/647/649/651 NPN silicon Darlington power transistors PINNING -SOT223 DESCRIPTION NPN epitaxial base transistors in a monolithic Darlington circuit in SOT223, intended for general
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BDS643/645/647/649/651
-SOT223
OT223,
BDS644/646/648/650/652.
bbS3T31
0034bt
bbS3T31
0034bl0
DQ34bll
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TOP 948
Abstract: BDS944 BDS946 BDS948 IEC134 MS80 T 948
Text: Philips Components BDS944/946/948 Datasheet status Product specification date of issue April 1991 PNP Silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PIN PNP silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general
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BDS944/946/948
OT223)
BDS943/945/947.
OT223
BDS944
BDS946
BDS948
TOP 948
IEC134
MS80
T 948
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m lc 945
Abstract: BDS945 BDS943 BDS947 945 npn 947 smd
Text: Philips Components Datasheet status Product specification date of issue April 1991 BDS943/945/947 NPN Silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PIN 1 2 3 4 NPN silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general
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PDF
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BDS943/945/947
OT223)
BDS944/946/948.
OT223
BDS943
BDS945
BDS947
m lc 945
945 npn
947 smd
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Untitled
Abstract: No abstract text available
Text: Philips Com ponents BDS950/952/954/956 Datasheet status Product specification PNP silicon epitaxial base power transistors date of Issue April 1991 PINNING - SOT223 D ESCRIPTIO N PIN PN P silicon epitaxial base transistors in a m iniature S M D envelope SOT223 intended for general
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BDS950/952/954/956
OT223
OT223)
BDS949/951/953/955.
BDS950
BDS952
BDS954
BDS956
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