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    SOT343F Search Results

    SOT343F Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SOT343F NXP Semiconductors Footprint for reflow soldering SOT343F Original PDF
    SOT343F NXP Semiconductors Plastic surface-mounted flat pack package; 4 leads Original PDF
    SOT343F_115 NXP Semiconductors DFP4; Tape reel SMD; standard product orientation 12NC ending 115 Original PDF

    SOT343F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CFH703A

    Abstract: LNA Ku band CFH705 cfh703 ku LNA LNB ku band lnb ku ku band lna LNA ku-band SOT343F
    Text: CFH70x Low-noise, high gain pHEMT transistors in small & easy to use SOT343FP package Fabricated using GaAs process technology, the CFH70x family pHEMT transistors delivers extremely low noise and very high gain in the easy to use SOT343FP package making it the ideal


    Original     		PDF CFH70x OT343FP CFH70x CFH703A LNA Ku band CFH705 cfh703 ku LNA LNB ku band lnb ku ku band lna LNA ku-band SOT343F

    BFU760F

    Abstract: bfu760 JESD625-A dielectric resonator oscillator germanium transistor table Germanium power
    Text: BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU760F OT343F JESD625-A BFU760F bfu760 dielectric resonator oscillator germanium transistor table Germanium power

    BFU730F

    Abstract: JESD625-A 555 ic Germanium power
    Text: BFU730F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU730F OT343F JESD625-A BFU730F 555 ic Germanium power

    ON5088

    Abstract: germanium NPN germanium transistors NPN JESD625-A SOT343F dielectric resonator oscillator NPN RF Transistor Germanium power
    Text: ON5088 NPN wideband silicon germanium RF transistor Rev. 01 — 22 April 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF ON5088 OT343F JESD625-A ON5088 germanium NPN germanium transistors NPN SOT343F dielectric resonator oscillator NPN RF Transistor Germanium power

    2.4 ghz transistor wifi amplifier

    Abstract: Germanium power
    Text: BFU768F NPN wideband silicon germanium RF transistor Rev. 1.2 — 24 December 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU768F OT343F JESD625-A 2.4 ghz transistor wifi amplifier Germanium power

    BFU725F

    Abstract: JESD625-A germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power
    Text: BFU725F NPN wideband silicon germanium RF transistor Rev. 01 — 6 December 2007 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU725F OT343F JESD625-A BFU725F germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power

    Untitled

    Abstract: No abstract text available
    Text: BFU690F NPN wideband silicon RF transistor Rev. 2 — 14 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. 1.2 Features and benefits


    Original     		PDF BFU690F OT343F

    transistor marking N1

    Abstract: BFU725F JESD625-a LNB ka band 160 germanium transistor ka-band mixer DRO lnb germanium transistors NPN ka band lna nxp DC to microwave
    Text: BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 01 — 13 July 2009 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU725F/N1 OT343F JESD625-A BFU725F transistor marking N1 LNB ka band 160 germanium transistor ka-band mixer DRO lnb germanium transistors NPN ka band lna nxp DC to microwave

    DRO lnb

    Abstract: JESD625-A BFU630 BFU630F
    Text: BFU630F NPN wideband silicon RF transistor Rev. 1 — 15 December 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION


    Original     		PDF BFU630F OT343F JESD625-A DRO lnb BFU630 BFU630F

    BFU660F

    Abstract: sdars JESD625-A 25CCBS
    Text: BFU660F NPN wideband silicon RF transistor Rev. 1 — 11 January 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION


    Original     		PDF BFU660F OT343F JESD625-A BFU660F sdars 25CCBS

    SOT343F

    Abstract: SOT-343F
    Text: Package outline Philips Semiconductors Plastic surface-mounted flat pack package; reverse pinning; 4 leads D SOT343F E A y X HE e 3 4 A c 2 w M A Lp 1 bp b1 w A M detail X e1 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A max bp b1 c D E e


    Original     		PDF OT343F SOT343F SOT-343F

    Untitled

    Abstract: No abstract text available
    Text: BFU610F NPN wideband silicon RF transistor Rev. 2 — 11 January 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION


    Original     		PDF BFU610F OT343F JESD625-A

    BFU725F

    Abstract: germanium transistors NPN DRO lnb ka-band mixer Germanium diode data sheet germanium npn nxp power microwave transistor RF Transistor reference JESD625-A Germanium power
    Text: BFU725F NPN wideband silicon germanium RF transistor Rev. 02 — 23 June 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU725F OT343F JESD625-A BFU725F germanium transistors NPN DRO lnb ka-band mixer Germanium diode data sheet germanium npn nxp power microwave transistor RF Transistor reference Germanium power

    Untitled

    Abstract: No abstract text available
    Text: SOT343F DFP4; Tape reel SMD; standard product orientation 12NC ending 115 Rev. 1 — 15 November 2012 Packing information 1. Packing method Printed plano box Barcode label Reel Tape Barcode label Circular sprocket holes opposite the label side of reel QA Seal


    Original     		PDF OT343F msc074 OT343F

    Germanium power

    Abstract: No abstract text available
    Text: ON5088 NPN wideband silicon germanium RF transistor Rev. 2 — 22 December 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF ON5088 OT343F JESD625-A Germanium power

    Untitled

    Abstract: No abstract text available
    Text: BFG424F NPN 25 GHz wideband transistor Rev. 2 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFG424F OT343F

    BFU610F

    Abstract: SOT343F germanium rf transistor germanium power devices corporation Mifare PLUS X Germanium power
    Text: BFU610F NPN wideband silicon germanium RF transistor Rev. 01 — 17 June 2010 Objective data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU610F OT343F BFU610F SOT343F germanium rf transistor germanium power devices corporation Mifare PLUS X Germanium power

    Untitled

    Abstract: No abstract text available
    Text: BFU710F NPN wideband silicon germanium RF transistor Rev. 1 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU710F OT343F JESD625-A

    Untitled

    Abstract: No abstract text available
    Text: BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU760F OT343F JESD625-A

    Untitled

    Abstract: No abstract text available
    Text: BFG424F NPN 25 GHz wideband transistor Rev. 2 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFG424F OT343F

    Untitled

    Abstract: No abstract text available
    Text: Package outline Plastic surface-mounted flat pack package; reverse pinning; 4 leads D SOT343F E A y X HE e 3 4 A c 2 w M A Lp 1 bp b1 w A M detail X e1 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A max bp b1 c D E e e1 HE Lp w y mm 0.75 0.65


    Original     		PDF OT343F

    BFU790F

    Abstract: JESD625-A Germanium power
    Text: BFU790F NPN wideband silicon germanium RF transistor Rev. 1 — 22 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU790F OT343F JESD625-A BFU790F Germanium power

    JESD625-A

    Abstract: BFU710F DRO lnb Germanium power
    Text: BFU710F NPN wideband silicon germanium RF transistor Rev. 1 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU710F OT343F JESD625-A BFU710F DRO lnb Germanium power

    Germanium Transistor

    Abstract: Germanium power ON5088,115
    Text: ON5088 NPN wideband silicon germanium RF transistor Rev. 3 — 12 December 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF ON5088 OT343F JESD625-A Germanium Transistor Germanium power ON5088,115