SOURCE21 Search Results

SOURCE21 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Doc No. TT4-EA-14734 Revision. 2 Product Standards MOS FET FC6B22100L FC6B22100L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.56 5 4 1 2 3 • Features  Low source-source ON resistance:Rss on typ. = 8.2 m （VGS = 4.5 V)	Original	TT4-EA-14734 FC6B22100L	PDF
Untitled Abstract: No abstract text available Text: Doc No. TT4-EA-14847 Revision. 1 Product Standards MOS FET FC6B22220L FC6B22220L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.56 5 4 1 2 3 Features y Low source-source ON resistance:Rss on typ. = 8.2 m Ω（VGS = 4.5 V)	Original	TT4-EA-14847 FC6B22220L	PDF
SONY PSP 2001 Abstract: sony psp lcd IPR31 PXA800F TCO23 TCO12 ABB Semiconductors SCR DCMD7 microcontroller interface with gsm module uicc Text: Intel PXA800F Cellular Processor Developer’s Manual July 2003 Revision 0.75 Order Number: 252-569 - 002 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL	Original	PXA800F SONY PSP 2001 sony psp lcd IPR31 TCO23 TCO12 ABB Semiconductors SCR DCMD7 microcontroller interface with gsm module uicc	PDF
Untitled Abstract: No abstract text available Text: Doc No. TT4-EA-14513 Revision. 1 Product Standards MOS FET FC6B22090L FC6B22090L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.56 5 4 1 2 3 • Features  Low source-source ON resistance:Rss on typ. = 8.5 m （VGS = 4.5 V)	Original	TT4-EA-14513 FC6B22090L	PDF
GM16C450 Abstract: GM16550 scr tic 106 16C550 ARM720T GDC21D601 GDC601 16550 initialization timing diagram of DMA Transfer Text: GDC21D601 32-Bit RISC MCU Ver 1.6 HDS-GDC21D601-9908 / 10 GDC21D601 The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by Hyundai for any infringements of patents or other rights of the third parties	Original	GDC21D601 32-Bit HDS-GDC21D601-9908 0xFFFFFA00 0xFFFFFA04 0xFFFFFA08 0xFFFFFA10 0xFFFFFA14 0xFFFFFB00 GM16C450 GM16550 scr tic 106 16C550 ARM720T GDC21D601 GDC601 16550 initialization timing diagram of DMA Transfer	PDF
MBGA006-W-1723APA Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . FC6A2106 Gate resistor installed dual N-channel MOS FET For lithium-ion secondary battery protection circuits • Overview  Package FC6A2106 is the dual N-channel MOS FET adopted the small & thinn CSP	Original	2002/95/EC) FC6A2106 FC6A2106 MBGA006-W-1723APA FC6A21060L MBGA006-W-1723APA	PDF
d3n04h Abstract: D3N04 Text: MOTOROLA O rder th is docum ent by MMDF3N04HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MMDF3N04HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N -C hannel Field E ffect Transistor DUAL TMOS POWER MOSFET 3.4 AMPERES	OCR Scan	MMDF3N04HD/D MMDF3N04HD MMDF3N04HDD d3n04h D3N04	PDF
f2n02 Abstract: F2N diode MDF2N Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MMDF2N02E Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors DUAL TMOS MOSFET 3.6 AMPERES 25 VOLTS RDS on = 0.1 OHM MiniMOS™ devices are an advanced series of power MOSFETs	OCR Scan	MMDF2N02E DF2N02E f2n02 F2N diode MDF2N	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MMDF2P01HD Medium Power Surface Mount Products Motorola Prafarrad Davfc« TMOS P-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs w hich utilize M o toro la’s High Cell D ensity H D TM O S process.	OCR Scan	MMDF2P01HD	PDF