Untitled
Abstract: No abstract text available
Text: Technical Fachbericht Report May, 27 2014 Cameras Laborautomation & Vision Sensors 1/4 Technical Report – What actually is a vision sensor? Yin-Yang as a true all-rounder To some machine builders, a “vision sensor” is still an unknown species. Maybe because the term sounds
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imo 2.1 un 1950
Abstract: imo 2.1 un 1950 msds imo 2.1 un 1950 safety packing code of aerosols imo 2.1 un 1950
Text: Eco Line Cleaner Degreaser MATERIAL SAFETY DATA SHEET Finished Product Date-Issued: MSDS Ref. No: Date-Revised: Revision No: 12/20/2002 1620-A 12/20/2002 New MSDS Eco Line Cleaner Degreaser 1. PRODUCT AND COMPANY IDENTIFICATION PRODUCT NAME: Eco Line Cleaner Degreaser
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620-A
1620/CAN/EUR-10S
29CFR1910
/WINDOWS/Desktop/MSDS/98727hd3
imo 2.1 un 1950
imo 2.1 un 1950 msds
imo 2.1 un 1950 safety
packing code of aerosols imo 2.1 un 1950
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"Flammable Liquid"
Abstract: imo 3 un 1993 LC505 degreaser acetone WHMIS
Text: C/D Solv RE MATERIAL SAFETY DATA SHEET Finished Product Date-Issued: MSDS Ref. No: Date-Revised: Revision No: 01/18/2003 3040-B 01/18/2003 New MSDS C/D Solv RE 1. PRODUCT AND COMPANY IDENTIFICATION PRODUCT NAME: C/D Solv RE GENERAL USE: General Purpose Cleaner/Degreaser
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3040-B
3040-5G,
3040-55G
29CFR1910
/WINDOWS/Desktop/MSDS/74279hwp
"Flammable Liquid"
imo 3 un 1993
LC505
degreaser
acetone WHMIS
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ID8000 CONSUMER COMMODITY
Abstract: UN1992 id8000
Text: Wondermask WSOL MATERIAL SAFETY DATA SHEET Finished Product Date-Issued: MSDS Ref. No: Date-Revised: Revision No: 01/08/2003 2204-8SQ 01/08/2003 New MSDS Wondermask WSOL 1. PRODUCT AND COMPANY IDENTIFICATION PRODUCT NAME: Wondermask WSOL PRODUCT DESCRIPTION: Wave solder process masking agent
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2204-8SQ
2204/CAN-8SQ
29CFR1910
/WINDOWS/Desktop/MSDS/349694s7
ID8000 CONSUMER COMMODITY
UN1992
id8000
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Untitled
Abstract: No abstract text available
Text: Wondermask WS MATERIAL SAFETY DATA SHEET Finished Product Date-Issued: MSDS Ref. No: Date-Revised: Revision No: 01/10/2003 2207-G/5G 01/10/2003 New MSDS Wondermask WS 1. PRODUCT AND COMPANY IDENTIFICATION PRODUCT NAME: Wondermask WS PRODUCT DESCRIPTION: Wave solder process masking agent
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2207-G/5G
2207/CAN/EUR-P,
29CFR1910
/WINDOWS/Desktop/MSDS/227072xa
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ID8000 CONSUMER COMMODITY
Abstract: ID8000 imo 2.2 un 1950 d-Limonene
Text: Label and Adhesive Remover MATERIAL SAFETY DATA SHEET Finished Product Date-Issued: MSDS Ref. No: Date-Revised: Revision No: 12/20/2002 1613-A 12/20/2002 New MSDS Label and Adhesive Remover 1. PRODUCT AND COMPANY IDENTIFICATION PRODUCT NAME: Label and Adhesive Remover
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613-A
1613/CAN/EUR-6S
/WINDOWS/Desktop/MSDS/English/37105bu6
ID8000 CONSUMER COMMODITY
ID8000
imo 2.2 un 1950
d-Limonene
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Acetone FULL NAME
Abstract: 1621B
Text: Eco Line Flux Remover MATERIAL SAFETY DATA SHEET Finished Product Date-Issued: MSDS Ref. No: Date-Revised: Revision No: 12/20/2002 1621-B 12/20/2002 New MSDS Eco Line Flux Remover 1. PRODUCT AND COMPANY IDENTIFICATION PRODUCT NAME: Eco Line Flux Remover GENERAL USE: General Purpose Flux Remover
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1621-B
1621/CAN/EUR-G,
29CFR1910
/WINDOWS/Desktop/MSDS/English/24159rw8
Acetone FULL NAME
1621B
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Untitled
Abstract: No abstract text available
Text: FSGL130R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both
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FSGL130R
FSGL130R
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FSGYE130R4
Abstract: Rad Hard in Fairchild for MOSFET 2E12 FSGYE130D1 FSGYE130R3
Text: FSGYE130R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both
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FSGYE130R
FSGYE130R
FSGYE130R4
Rad Hard in Fairchild for MOSFET
2E12
FSGYE130D1
FSGYE130R3
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2E12
Abstract: FSTYC9055D FSTYC9055D1 FSTYC9055D3 FSTYC9055R Rad Hard in Fairchild for MOSFET
Text: FSTYC9055D, FSTYC9055R Data Sheet Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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FSTYC9055D,
FSTYC9055R
2E12
FSTYC9055D
FSTYC9055D1
FSTYC9055D3
FSTYC9055R
Rad Hard in Fairchild for MOSFET
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2E12
Abstract: FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 Rad Hard in Fairchild for MOSFET
Text: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically
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FSYC160D,
FSYC160R
2E12
FSYC160D
FSYC160D1
FSYC160D3
FSYC160R
FSYC160R1
FSYC160R3
FSYC160R4
Rad Hard in Fairchild for MOSFET
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bare Die Si mosfet
Abstract: No abstract text available
Text: Standard Products RAD7160-NCx Power MOSFET Die Data Sheet April, 2012 www.aeroflex.com/MOSFETS FEATURES INTRODUCTION 100Vbreakdown voltage 60 A current rating 0.01RDS on Aeroflex RAD's new radiation tolerant power MOSFETs are now available in die, seven standard package options and custom
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RAD7160-NCx
100Vbreakdown
01RDS
150nC
-55oC
125oC
MIL-STD750
bare Die Si mosfet
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Untitled
Abstract: No abstract text available
Text: Standard Products RAD7130-NCx Power MOSFET Die Datasheet August, 2012 www.aeroflex.com/MOSFETS FEATURES INTRODUCTION 100Vbreakdown voltage 22 A current rating 0.05RDS on Aeroflex RAD's new radiation tolerant power MOSFETs are now available in die, seven standard package options and custom
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RAD7130-NCx
100Vbreakdown
05RDS
-55oC
125oC
MIL-STD750
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Untitled
Abstract: No abstract text available
Text: Standard Products RAD7214-NCx Power MOSFET Die Data Sheet April, 2012 www.aeroflex.com/MOSFETS FEATURES INTRODUCTION 250Vbreakdown voltage 2.5 A current rating 1.2RDS on Aeroflex RAD's new radiation tolerant power MOSFETs are now available in die, seven standard package options and custom
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RAD7214-NCx
250Vbreakdown
-55oC
125oC
MIL-STD750
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Rad Hard in Fairchild for MOSFET
Abstract: 1E14 2E12 FSPL234D1 FSPL234F FSPL234R FSPL234R3
Text: FSPL234R, FSPL234F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the
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FSPL234R,
FSPL234F
FSPL234F
Rad Hard in Fairchild for MOSFET
1E14
2E12
FSPL234D1
FSPL234R
FSPL234R3
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1E14
Abstract: 2E12 FSPYC264D1 FSPYC264F FSPYC264R FSPYC264R3 iodine Rad Hard in Fairchild for MOSFET
Text: FSPYC264R, FSPYC264F Data Sheet 2001 Fairchild Semiconductor Corporation Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or
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FSPYC264R,
FSPYC264F
FSPYC264F
1E14
2E12
FSPYC264D1
FSPYC264R
FSPYC264R3
iodine
Rad Hard in Fairchild for MOSFET
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Untitled
Abstract: No abstract text available
Text: Project laboratory and thesis topics at the Faculty of Electrical Engineering and Informatics INTRODUCTION – PLEASE READ CAREFULLY Dear International Student! Thank you for your interest to attend a Project Laboratory course or to prepare your BSc or MSc thesis
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2E12
Abstract: FSYE913A0D FSYE913A0D1 FSYE913A0D3 FSYE913A0R FSYE913A0R1 Rad Hard in Fairchild for MOSFET
Text: FSYE913A0D, FSYE913A0R Data Sheet Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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FSYE913A0D,
FSYE913A0R
2E12
FSYE913A0D
FSYE913A0D1
FSYE913A0D3
FSYE913A0R
FSYE913A0R1
Rad Hard in Fairchild for MOSFET
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2E12
Abstract: FSPL130D1 FSPL130R3 Rad Hard in Fairchild for MOSFET
Text: FSPL130R, FSPL130F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the
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FSPL130R,
FSPL130F
FSPL130F
2E12
FSPL130D1
FSPL130R3
Rad Hard in Fairchild for MOSFET
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potentiostat
Abstract: Carbon Monoxide SENSOR CIRCUIT DIAGRAM L9100 simple blood glucose meter circuit diagram L91000 op amp in potentiostat gas Smart meter chemical sensor circuit diagram of blood glucose meter LMP9100
Text: LMP91000 Sensor AFE System: Configurable AFE Potentiostat for Low-Power Chemical Sensing Applications General Description Features The LMP91000 is a programmable Analog Front End AFE for use in micro-power electrochemical sensing applications. It provides a complete signal path solution between a sensor
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LMP91000
LMP91000
potentiostat
Carbon Monoxide SENSOR CIRCUIT DIAGRAM
L9100
simple blood glucose meter circuit diagram
L91000
op amp in potentiostat
gas Smart meter
chemical sensor
circuit diagram of blood glucose meter
LMP9100
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robot control
Abstract: C203 C209 SPRU121 TMS320 TMS320C203 TMS320C209 XDS510 TMS320F2XX
Text: TMS320C2xx User’s Guide Literature Number: SPRU127B Manufacturing Part Number: D412008-9761 revision A January 1997 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any
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TMS320C2xx
SPRU127B
D412008-9761
C203/C204
XDS510
robot control
C203
C209
SPRU121
TMS320
TMS320C203
TMS320C209
TMS320F2XX
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2E12
Abstract: FSF150D FSF150D1 FSF150D3 FSF150R FSF150R1 FSF150R3
Text: FSF150D, FSF150R 25A, 100V, 0.070 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 25A, 100V, rDS ON = 0.070Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSF150D,
FSF150R
2E12
FSF150D
FSF150D1
FSF150D3
FSF150R
FSF150R1
FSF150R3
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1E14
Abstract: 2E12 FSGL234D1 FSGL234R3 FSGL234R4
Text: FSGL234R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle GL R bdin dd, GR is- Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment.
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FSGL234R
FSGL234R
1E14
2E12
FSGL234D1
FSGL234R3
FSGL234R4
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FSGYC260R3
Abstract: FSGYC260R4 1E14 2E12 FSGYC260D1 FSGYC260R Rad Hard in Fairchild for MOSFET
Text: FSGYC260R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low
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FSGYC260R
FSGYC260R3
FSGYC260R4
1E14
2E12
FSGYC260D1
FSGYC260R
Rad Hard in Fairchild for MOSFET
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