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    SPECIFICATION OF TRANSISTOR BC 107 Search Results

    SPECIFICATION OF TRANSISTOR BC 107 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SPECIFICATION OF TRANSISTOR BC 107 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    L6598D

    Abstract: l6598 24v Power supply L6598D 1N4148 Fast Switching Diode L6598 equivalent L6598 STP9NK50ZFP Equivalent TRANSISTOR BC 5480 10uF 450v Rubycon CE W
    Text: AN2331 Application note Reference design: 100W high performance, half bridge LLC multi-resonant SMPS with PFC Introduction This note describes the performances of a 100 W, wide-range mains, power-factorcorrected AC-DC adapter reference board EVAL6598-100W . The peculiarities of this


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    PDF AN2331 EVAL6598-100W) L6563 L6598 L6598D l6598 24v Power supply L6598D 1N4148 Fast Switching Diode L6598 equivalent STP9NK50ZFP Equivalent TRANSISTOR BC 5480 10uF 450v Rubycon CE W

    isl 6251 schematic

    Abstract: smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs
    Text: SIEMENS Halbleiter-Datenblätter Im Produktbereich „Halbleiter“ konnten uns leider von SIEMENS nicht alle Daten rechtzeitig zur Verfügung gestellt werden. Wir werden uns bemühen, die Auswahl an Datenblättern dieses Bereichs für die nächste Ausgabe dieser CD zu vervollständigen.


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    PDF Q62702-A772 Q62702-A731 Q62702-A773 OT-23 isl 6251 schematic smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs

    DALSA AREA CCD

    Abstract: dalsa FT frame transfer
    Text: IMAGE SENSORS DATA SHEET FT18 1M Frame Transfer CCD Image Sensor Product specification DALSA Professional Imaging 2006 December 19 DALSA Professional Imaging Product Specification 1M Frame Transfer CCD Image Sensor • 2/3-inch optical format • 1M active pixels 1024H x 1024V


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    PDF 1024H DALSA AREA CCD dalsa FT frame transfer

    infrared based security system

    Abstract: elevator schematic PROJECT INFRARED REMOTE SWITCH USING MICROCONTROLLER remote control PROGRAM PIC16F84 PIC16F84 example codes Remote keyless system PIC16F84 16 78L05 TO-92 pic16f84 project 78L05 voltage regulator
    Text: June 11, 1999 Recordable Infrared Remote Keyless Entry System Gecko Technologies Victor Ting Simon Fraser University School Of Engineering Science 107-1925 West 2nd Ave. Vancouver, BC CANADA 604 836-1259 [email protected] Abstract This project uses a PIC16F84 to record and playback two variable length codes


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    PDF PIC16F84 12-volt infrared based security system elevator schematic PROJECT INFRARED REMOTE SWITCH USING MICROCONTROLLER remote control PROGRAM PIC16F84 PIC16F84 example codes Remote keyless system PIC16F84 16 78L05 TO-92 pic16f84 project 78L05 voltage regulator

    PCR 406 J transistor

    Abstract: transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553
    Text: MIL-s-19500/341B 2! M,KII 196S SUPERSEDING ML-s -19 W0/341A 2 November 1966 See 6.3. MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NpN, SI I.lCQN, HIGH. FREQUENCY, TYPES 2N3315, TX2N337S, 2N3553, TX2N3553, 2144440 AND TX2N4440 POWER ‘his smclficctim


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    PDF MIL-s-19500/341B W0/341A 2N3315, TX2N337S, 2N3553, TX2N3553, TX2N4440 2N3375 gik16wwlhma lns81 PCR 406 J transistor transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553

    line follower sensor

    Abstract: QUANTUM CAPACITIVE TRANSISTOR BC 157 high frequency linear cmos IMAGE SENSOR ccd image sensor 1024H 850C 860C BAT74 FT18
    Text: IMAGE SENSORS FT 18 Frame Transfer CCD Image Sensor Product specification File under Image Sensors Philips Semiconductors 2000 January 7 TRAD Philips Semiconductors Product specification Frame Transfer CCD Image Sensor • 2/3-inch optical format • 1M active pixels 1024H x 1024V


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    PDF 1024H FT18/IG FT18/HG FT18/SG WAG-05 line follower sensor QUANTUM CAPACITIVE TRANSISTOR BC 157 high frequency linear cmos IMAGE SENSOR ccd image sensor 850C 860C BAT74 FT18

    TRANSISTOR BC 157

    Abstract: TRANSISTOR BC 157 pin connection sensor LDR line follower CDS LDR 5mm LDR sensor light dark sensor 10mm ldr on BC 1738 TRANSISTOR image sensor x-ray LDR 7MM LDR Cds
    Text: IMAGE SENSORS FTT1010-M Frame Transfer CCD Image Sensor Product specification File under Image Sensors Philips Semiconductors 1999 September 21 TRAD Philips Semiconductors Product specification Frame Transfer CCD Image Sensor • 1-inch optical format •


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    PDF FTT1010-M 1024H FTT1010-M/EG FTT1010-M/IG FTT1010-M/HG WAG-05 TRANSISTOR BC 157 TRANSISTOR BC 157 pin connection sensor LDR line follower CDS LDR 5mm LDR sensor light dark sensor 10mm ldr on BC 1738 TRANSISTOR image sensor x-ray LDR 7MM LDR Cds

    transistor smd 5DW 73

    Abstract: sipex 3232 BU-61588P3 SD-14621DX SD14621 sdc 7500 natel 09059 MPC 1298 V 5962-8952211YC 95003-01HXA
    Text: Qualifications Validated Annually QUALIFIED MANUFACTURERS LIST OF CUSTOM HYBRID MICROCIRCUITS QUALIFIED UNDER MILITARY SPECIFICATION MIL-PRF-38534 CUSTOM HYBRID MICROCIRCUITS QML-38534-29 30-Jun-99 SUPERSEDING QML-38534-28 31-Mar-99 CUSTOM HYBRID MICROCIRCUITS


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    PDF MIL-PRF-38534 QML-38534-29 30-Jun-99 QML-38534-28 31-Mar-99 MIL-PRF-38534. 16-BIT, transistor smd 5DW 73 sipex 3232 BU-61588P3 SD-14621DX SD14621 sdc 7500 natel 09059 MPC 1298 V 5962-8952211YC 95003-01HXA

    transistor C635

    Abstract: c63516 BD9397 C635 Philips C6351 c635 transistor BCX54-SOT89 PHILIPS BCX54 BCP54, BCX54 transistor BC 147
    Text: BC635; BCP54; BCX54 45 V, 1 A NPN medium power transistor series Rev. 06 — 25 February 2005 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1: Product overview Type number [1] Package PNP complement


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    PDF BC635; BCP54; BCX54 BC635 SC-43A BC636 BCP54 OT223 SC-73 BCP51 transistor C635 c63516 BD9397 C635 Philips C6351 c635 transistor BCX54-SOT89 PHILIPS BCX54 BCP54, BCX54 transistor BC 147

    UPD75P518GF-3b9

    Abstract: E 13007-2 IC-2672 UPD75P518GF uPD75P518 13007-2 WM7 SMD transistor marking code pD75P518GF SMD TRANSISTOR MARKING code wm2 transistor 2n 7849
    Text: USER'S MANUAL µPD75518 4 BIT SINGLE-CHIP MICROCOMPUTER µPD75517 µPD75518 µPD75P518 NEC Corporation 1990 Document No. IEU-1305E O. D. No. IEU-743E Date Published January 1995 P Printed in Japan Cautions on CMOS Devices 1 Countermeasures against static electricity for all MOSs


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    PDF PD75518 PD75517 PD75P518 IEU-1305E IEU-743E) PD75518 PORT0-PORT15 UPD75P518GF-3b9 E 13007-2 IC-2672 UPD75P518GF uPD75P518 13007-2 WM7 SMD transistor marking code pD75P518GF SMD TRANSISTOR MARKING code wm2 transistor 2n 7849

    SKE 1/08

    Abstract: diode SKE 1/08 WM7 SMD transistor marking code SKE 1/04 uPD75P518 uPD75P518GF-3B9 transistor 13007-2 IC-2672 transistor smd po7 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF PD75518 PORT0-PORT15 SKE 1/08 diode SKE 1/08 WM7 SMD transistor marking code SKE 1/04 uPD75P518 uPD75P518GF-3B9 transistor 13007-2 IC-2672 transistor smd po7 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

    BU-64843T

    Abstract: BU-64843 BU-648X3T/U8
    Text: Total-ACE Complete MIL-STD-1553 Solution Model: BU-648X3T/U/H/i8 Data Sheet Save board space and simplify your 1553 design and layout with the world's first fully integrated MIL-STD-1553 component, complete with 1553 protocol, memory, transceivers, and isolation transformers—all in one small plastic


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    PDF MIL-STD-1553 BU-648X3T/U/H/i8 MIL-STD-1553 MIL-STD-1760 MIL-STD-1760 D-80993 Blk-327 BU-64843T BU-64843 BU-648X3T/U8

    bc 106 transistor

    Abstract: specification of transistor bc 107
    Text: Philips Semiconductors Product specification PNP video transistor BFQ241 APPLICATIONS • Primarily intended for buffer stages in high resolution colour monitors. DESCRIPTION PIN 1 2 DESCRIPTION 1 base 2 collector 3 emitter i f men PNP silicon transistor encapsulated


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    PDF BFQ241 MBG498 bc 106 transistor specification of transistor bc 107

    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    4046 application note philips

    Abstract: transistor 6822 TRANSISTOR NPN 6822 41413 transistor d 1556 1FT sot23-6 805 399-4 International Power Sources marking 683 choke IEC134
    Text: Product specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL LEE1015TA 7 iio a 2 b SbE oa4bnG t5t « p h i n DESCRIPTION APPLICATIO N S Diffused emitter ballasting resistors providing excellent


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    PDF OT122 LEE1015TA 711002b 004tnG OT122 T-33-05 LEE1015TA 711Qfl2b 4046 application note philips transistor 6822 TRANSISTOR NPN 6822 41413 transistor d 1556 1FT sot23-6 805 399-4 International Power Sources marking 683 choke IEC134

    ICL8049

    Abstract: transistor bc 103 antilog amplifier anti-log TABLE 8048* log amplifier 8049 bc 303 transistor 8048BC 8048CC ICL8048
    Text: DIMÏÏÜÎ^DiL IC L 8 0 4 8 , IC L 8 0 4 9 M onolithic Log A m p lifier M onolithic A ntilog A m p lifier G E N E R A L D E S C R IP TIO N FE A T U R E S • 1/2% Full Scale Accuracy • Temperature Compensated 0°C to 70°C • Scale Factor IV /D ecad e, Adjustable


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    PDF ICL8048, ICL8049 120dB ICL8049 transistor bc 103 antilog amplifier anti-log TABLE 8048* log amplifier 8049 bc 303 transistor 8048BC 8048CC ICL8048

    kt420

    Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
    Text: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS


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    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


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    PDF 2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.


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    PDF BUK102-50GS s/lis25

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.


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    PDF BUK102-50GS

    Untitled

    Abstract: No abstract text available
    Text: m H A R R CA3094 IS SEMICONDUCTOR Programmable Power Switch/Amplifier for Control and General Purpose Applications Features Description • CA3094T, S, E, M for Operation Up to 24V The CA3094 is a differential input power control switch/ am plifier with auxiliary circuit features for ease of program­


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    PDF CA3094 CA3094T, CA3094 100mA. CA3080 250kfl AN6048 0047nF

    TRANSISTOR 131-6 BJ 946

    Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
    Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise


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    PDF B3-B3715 B3715-X-X-7600 TRANSISTOR 131-6 BJ 946 transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16

    a7w transistor

    Abstract: Ba 33 bco A7W 88 transistor a7w A7W 86 a7w 84 a7w 82 a7w 89 a7w 83 transistor a7w 82
    Text: PREPARED BY : SPEC No. LD-10407A DATE SHARP APPRO V ED B Y : D A TE F IL E N O . IS S U E : PAGE TFT LIQUID CRYSTAL DISPLAY GROUP S H A R P C O R P O R A T IO N A u g ,1 9 ,1 9 9 8 : 22 p ag e s A P P L IC A B L E G R O U P T F T L iq u id C ry stal D isplay


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    PDF LD-10407A LQ181E1DG01 LD-10407-19 181E1D a7w transistor Ba 33 bco A7W 88 transistor a7w A7W 86 a7w 84 a7w 82 a7w 89 a7w 83 transistor a7w 82

    TRANSISTOR 5101 FG

    Abstract: j 13007-2 WM7 SMD transistor marking code MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR TRANSISTOR SMD MARKING CODE s01 smd transistor bq SAA 1025 AHL touch 1015G ELAP cm 76
    Text: NEC USER’S MANUAL J0.PD75518 4 BIT SINGLE-CHIP MICROCOMPUTER HPD75517 X P D 7 5 5 1 8 |iPD75P518 Document No. IEU-1305E (O. D. No. IEU-743E Date Published January 1995 P Printed in Japan F£C Corporation 1990 •I b427SSS 0D^S3EH 174 ■ Cautions on CM OS D evices


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    PDF uPD75518 HPD75517 iPD75P518 IEU-1305E IEU-743E) b427SSS on-154 PD75518 b427525 00R57Q7 TRANSISTOR 5101 FG j 13007-2 WM7 SMD transistor marking code MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR TRANSISTOR SMD MARKING CODE s01 smd transistor bq SAA 1025 AHL touch 1015G ELAP cm 76