SPF2020A
Abstract: No abstract text available
Text: SPF2020A SANYO GaAs FET TENTATIVE Features and Applications • Best suited for transmitting amp s'final stage of 2'nd generation corclless phones. Operates at the drain voltage Vps of 3V. Absoulute Maximum Ratings / Ta=25°C Gate to Source Voltage Gate to Drain Voltage
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SPF2020A
250mm2
160mA
25MAX
951018TM2fXHD
SPF2020A
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2sc4857
Abstract: 2SC4872 2sc487 2sc4856 2sc4859
Text: I High-Performance Si Bipolartransistor fT > 5GHz Series Features High Gain, Low Noise G -III-NRP (G iga-lll-N oise Reduction Process) technology subm icron hyperfine process developed for high gain and low noise characteristics Low Power Dissipation High perform ance at low voltage and low current for low power dissipation
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2SC4853
250mm2
jS21e
2sc4857
2SC4872
2sc487
2sc4856
2sc4859
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sma3001
Abstract: SGF25
Text: SA\YO New Microwave Device Product Line P D C for P H S f o r t e r m ¡ n a ! 1.9 G H z te r m in a / ( 8 0 0 M H z ) P PW e r A m p . w * S P F2 020 A ¡ li t *I fitter SPM2001A * S MA 3Q A nt . S. W 2SC5534 Low > B uffer Amo «SMA30QI Noi«e Amp. Pupi«»«''
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SPM2001A
2SC5534
SMA30QI
SPM0103A
SPM3202
20dBm
SPM3205
SPM3252
24dBm
sma3001
SGF25
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SM01067
Abstract: SFF157
Text: Continued from previous page Absoluta maximum ratings Typ* Nil X r Electrical characteristics Ta • 2 5 1 V rm n S lF to VRRM (V) (A) IFSM (A) IRmai 9 VR VF irax W IF (A) iRmax (mA) trrNMwSlF tir max On) VR 00 IF (A) S s ff Pin capacitance typ (pF) t SB1I-04HP
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SB1I-04HP
SB16-04LHP
SB20-04A
SB30-04A
SB10-05A2
SB10-05A3
FETs/MM01067N
678GHz
SM01077
SM01077N
SM01067
SFF157
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